Marc A Mangrum - Manchaca TX, US Kenneth R Burch - Austin TX, US David T Patten - Austin TX, US
Assignee:
Freescale Semiconductor, Inc. - Austin TX
International Classification:
G01R 1/02 G01R 1/073 G01R 31/28
US Classification:
324755, 324765
Abstract:
A device under test (DUT) is tested via a test interposer. The test interposer includes a first set of contacts at a first surface to interface with the contacts of a load board or other interface of an automated test equipment (ATE) and a second set of contacts at an opposing second surface to interface with the contacts of the DUT. The second set of contacts can have a smaller contact pitch than the contact pitch of the first set of contacts to facilitate connection to the smaller pitch of the contacts of the DUT. The test interposer further includes one or more active circuit components or passive circuit components to facilitate testing of the DUT. The test interposer can be implemented as an integrated circuit (IC) package that encapsulates the circuit components.
Method And Apparatus For Testing A Semiconductor Structure Having Top-Side And Bottom-Side Connections
Edmond Cheng - Cedar Park TX, US Addi B. Mistry - Austin TX, US David T. Patten - Austin TX, US
Assignee:
Freescale Semiconductor, Inc. - Austin TX
International Classification:
G01R 31/02
US Classification:
324755, 324765
Abstract:
A method for testing a semiconductor structure having a set of top-side connections and having a set of bottom-side connections is provided. The method may include providing a device socket for connecting the set of top-side connections and the set of bottom-side connections to a tester. The method may further include providing a device hood for connecting the set of top-side connections to a respective first end of each of a plurality of interconnects in the device hood, wherein a second end of each of the plurality of interconnects in the device hood connects the set of top-side connections to the device socket. The method may further include testing the semiconductor structure using the tester. The semiconductor structure may include at least one integrated circuit to be tested.
Stackable Molded Packages And Methods Of Making The Same
Addi B. Mistry - Austin TX, US Marc A. Mangrum - Manchaca TX, US David T. Patten - Austin TX, US Jesse Phou - Austin TX, US Ziep Tran - Austin TX, US
Assignee:
Freescale Semiconductor, Inc. - Austin TX
International Classification:
H01L 23/552 H01L 23/02
US Classification:
257659, 257686, 257E23114
Abstract:
A first packaged integrated circuit (IC) includes a package substrate, at least one IC die attached to a first surface of the package substrate, a plurality of conductive members on the first surface at least partially surrounding the at least one IC die and electrically connected to the at least one IC die, an encapsulant over the first surface surrounding the at least one IC die and the plurality of conductive members, wherein at least a portion of each of the plurality of conductive members is exposed by the encapsulant. A second packaged IC may be stacked onto the first packaged IC. The second packaged IC includes at least one IC die and a plurality of conductive members, each conductive member of the plurality of conductive members of the second packaged IC is in contact with a corresponding conductive member of the plurality conductive members of the first packaged IC.
John Gehman - Austin TX, US Brian Christensen - Dybvad, DK James Kleffner - Leander TX, US Addi Mistry - Austin TX, US David Patten - Austin TX, US John Rohde - Ega, DK Daryl Wilde - Austin TX, US
International Classification:
H01L027/10
US Classification:
257/202000
Abstract:
A stacked die system () has a first die () having a first surface with active circuitry, a second die () having a first surface with active circuitry, and a conductive shield () interposed between the first surface of the first die and the first surface of the second die. In one embodiment, the distance between the first surfaces of the first and second die is less than one millimeter. The stacked die system may also include a package substrate () where the active circuitry of the first and second die are electrically connected to the package substrate. The electrical connections may be formed using wire bonds (). Alternatively, the first die may be connected to the package substrate in a flip chip configuration. In one embodiment, the active circuitry of the first die generates RF signals where the shield helps protect the RF signals from interference caused by the active circuitry of the second die.
Stackable Molded Packages And Methods Of Making The Same
Addi Mistry - Austin TX, US Marc Mangrum - Manchaca TX, US David Patten - Austin TX, US Jesse Phou - Austin TX, US Ziep Tran - Austin TX, US
International Classification:
H01L 21/00
US Classification:
438109000
Abstract:
A first packaged integrated circuit (IC) includes a package substrate, at least one IC die attached to a first surface of the package substrate, a plurality of conductive members on the first surface at least partially surrounding the at least one IC die and electrically connected to the at least one IC die, an encapsulant over the first surface surrounding the at least one IC die and the plurality of conductive members, wherein at least a portion of each of the plurality of conductive members is exposed by the encapsulant. A second packaged IC may be stacked onto the first packaged IC. The second packaged IC includes at least one IC die and a plurality of conductive members, each conductive member of the plurality of conductive members of the second packaged IC is in contact with a corresponding conductive member of the plurality conductive members of the first packaged IC.
Stackable Molded Packages And Methods Of Making The Same
Addi Mistry - Austin TX, US Marc Mangrum - Manchaca TX, US David Patten - Austin TX, US Jesse Phou - Austin TX, US Ziep Tran - Austin TX, US
Assignee:
Freescale Semiconductor, Inc - Austin TX
International Classification:
H01L 21/56
US Classification:
438117000, 438127000, 257E21502
Abstract:
A first packaged integrated circuit (IC) includes a package substrate, at least one IC die attached to a first surface of the package substrate, a plurality of conductive members on the first surface at least partially surrounding the at least one IC die and electrically connected to the at least one IC die, an encapsulant over the first surface surrounding the at least one IC die and the plurality of conductive members, wherein at least a portion of each of the plurality of conductive members is exposed by the encapsulant. A second packaged IC may be stacked onto the first packaged IC. The second packaged IC includes at least one IC die and a plurality of conductive members, each conductive member of the plurality of conductive members of the second packaged IC is in contact with a corresponding conductive member of the plurality conductive members of the first packaged IC.
A packaged semiconductor die may include a package terminal array comprising a plurality of terminals, wherein a spacing between the plurality of terminals of the ball grid array is less than 0.5 mm. First and second high-voltage circuits of the die may output a differential signal to a first and second terminal that may exceed 15 volts, in which the first high-voltage circuit and the second high-voltage circuit are positioned symmetrically around an axis and in which the first terminal and the second terminal are located at an edge of the package terminal array. A low-voltage circuit may be coupled to a third terminal and positioned between the first high-voltage circuit and the second high-voltage circuit, wherein the low-voltage circuit comprises circuitry organized in columns aligned along an axis and having a width defined by a fraction of the terminal spacing pitch.
- Edinburgh, GB David Patten - Austin TX, US Jun Yan - Austin TX, US
International Classification:
H01F 27/28 H01F 27/24 H01F 17/00
Abstract:
A method for constructing a solenoid inductor includes positioning an inner winding substantially around a magnetic core, positioning an outer winding substantially around the inner winding, and using a layered process to perform said positioning the inner and outer windings. The layered process includes processing a first conducting layer as a bottom layer of the outer winding, above processing a first dielectric layer, above processing a second conducting layer as a bottom layer of the inner winding, above processing a second dielectric layer, above processing a magnetic core layer, above processing a third dielectric layer, above processing a third conducting layer as a top layer of the inner winding, above processing a fourth dielectric layer, above processing a fourth conducting layer as a top layer of the outer winding, above processing a fifth dielectric layer, and the inner and outer windings are electrically connected.
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consultant Scout Ltd. officials wrote the email in March after Thorsen, then director of the R.I. Department of Administration, and state property director David Patten traveled to visit a facility the company redeveloped in Philadelphia as it sought a contract to redevelop the Cranston Street Armory.
Date: Jun 14, 2023
Category: U.S.
Source: Google
Super Bowl LIII by the numbers: Patriots can make more history
en his favourite big-game target with three TD passes tossed his way. Heres the full list: David Patten, Deion Branch, David Givens (2), Mike Vrabel (2), Randy Moss, Danny Woodhead, Aaron Hernandez, Brandon LaFell, Rob Gronkowski (3), Danny Amendola (2), Julian Edelman, James White, Chris Hogan. (Fo
Date: Feb 01, 2019
Category: Headlines
Source: Google
Brandin Cooks was traded because Bill Belichick doesn't pay young receivers
transfer their production to new teams may provide deeper insight into why the Pats werent likely to pay Cooks in 2018 or beyond. Targets like Branch, David Givens, Reche Caldwell, David Patten, and even Moss failed to live up to their New England standard once removed from Bradys influence. That
Date: Apr 04, 2018
Category: Sports
Source: Google
Patriots dynasty began with Ty Law's pick-six 15 years ago
-familiar sight, the Steelers were outclassed by New England, even after Brady went down with a knee injury early in the second quarter. Troy Brown returned a punt 55 yards for a TD and Bledsoe threw an 11-yard TD to David Patten as the Patriots won 24-17 in a game that wasnt even that close.
Date: Feb 05, 2017
Category: Sports
Source: Google
The 12 greatest moments in New England Patriots Super Bowl history
Before David Patten caught that touchdown against the Rams, the Patriots managed to slow the pace of the game and largely contain the Greatest Show on Turf, holding them to just one field goal in the opening half.
and tossed a touchdown to Jason Witten. He capped off Dallas' scoring bonanza with a beautiful back-shoulder score in the final stanza. Bryant joined former Patriots wideout David Patten as the only players of the Super Bowl era with a pair of receiving scores and a passing touchdown in the same game.
Date: Dec 26, 2016
Category: Sports
Source: Google
How Does Trevor Siemian's Debut Season Stack Up Against Tom Brady's?
s running attack has been miserable this season, forcing Siemian to throw more often than Brady needed to when he had Antowain Smith to hand off to. The 2016 Broncos also have more talented receivers (Demaryius Thomas and Emmanuel Sanders) than the 2001 Patriots had (Troy Brown and David Patten).
Date: Dec 16, 2016
Category: Sports
Source: Google
Chris Hogan is a perfect fit, just like Patriots planned
Hogan has 19 receptions this season for 391 yards and two touchdowns, and his 20.6 yards per catch could break David Pattens high mark (18.2 in 2004) for wideouts in the Brady era. Since Brady returned, Hogan has 11 catches for 269 yards (24.5 yards per catch) and a score.