David E Paulsen

age ~58

from Grand Meadow, MN

Also known as:
  • Dave E Paulsen
  • David E Paulsson
  • David E Pausen

David Paulsen Phones & Addresses

  • Grand Meadow, MN
  • Ojai, CA
  • Austin, MN
  • Chicago, IL
  • Alpharetta, GA
  • Isla Vista, CA
  • 113 1St St NW, Grand Meadow, MN 55936 • 5073805918

Work

  • Position:
    Building and Grounds Cleaning and Maintenance Occupations

Education

  • Degree:
    High school graduate or higher
Name / Title
Company / Classification
Phones & Addresses
David Paulsen
President
Hayward Cooperative Inc
Whol Farm Supplies Whol Grain/Field Beans
PO Box 337, Hayward, MN 56043
20470 810 Ave, Hayward, MN 56043
5073736439
David Paulsen
President
Hayward Cooperative
Food & Beverages · Whol Farm Supplies Whol Grain/Field Beans · Business Association
20470 810 Ave, Hayward, MN 56043
PO Box 337, Hayward, MN 56043
5073736439
David Paulsen
Director, President
Transamerica Capital, Inc
Open-End Mgmt Investment Life Insurance Carrier Commodity Contract Brkr Security Broker/Dealer
7204821500
David F. Paulsen
President
TOP SPIN, INCORPORATED
Ret Sporting Goods/Bicycles
145 San Clemente Ave, Oxnard, CA 93035
5743 Corsa Ave, Thousand Oaks, CA 91362
13660 Marina Pointe Dr, Venice, CA 90292
13600 Marina Pointe Dr, Venice, CA 90292
David Paulsen
President, Treasurer, Secretary
Webbstarr Technologies, Inc
2560 Woodbine Hl Way, Norcross, GA 30071

Resumes

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David Paulsen

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David Paulsen

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David Paulsen

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David Paulsen

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David Paulsen

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David Paulsen

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Education:
University of Utah
Skills:
Sales
Training
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David Paulsen

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David Paulsen

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Location:
United States

Us Patents

  • Aligning Stacked Chips Using Resistance Assistance

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  • US Patent:
    7514276, Apr 7, 2009
  • Filed:
    Aug 12, 2008
  • Appl. No.:
    12/190395
  • Inventors:
    Corey Elizabeth Yearous - Rochester MN, US
    Phil Christopher Paone - Rochester MN, US
    Kelly Lynn Williams - Rochester MN, US
    David Paul Paulsen - Rochester MN, US
    Gregory John Uhlmann - Rochester MN, US
    Karl Robert Ericson - Rochester MN, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 21/20
  • US Classification:
    438 15, 438 14, 438 17, 438 18, 438108, 438126, 257E21511, 257E21606, 257E21705, 257E23004, 257E23019
  • Abstract:
    The present invention relates to a method of aligning stacked chips wherein the apparatus and method utilize bumps in the form of exposed metal lines on a first chip. The present invention further relates to taking a resistance measurement to determine a quality of alignment wherein the resistance measurement indicates a direction in which the first chip and the second chip are misaligned.
  • Implementing Aps Voltage Level Activation With Secondary Chip In Stacked-Chip Technology

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  • US Patent:
    7865859, Jan 4, 2011
  • Filed:
    Oct 10, 2007
  • Appl. No.:
    11/869841
  • Inventors:
    Phil C. Paone - Rochester MN, US
    David Paul Paulsen - Dodge Center MN, US
    Gregory John Uhlmann - Rochester MN, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    G06F 17/50
  • US Classification:
    716 12, 716 1, 716 6, 716 17
  • Abstract:
    A method and apparatus implement adaptive power supply (APS) system voltage level activation eliminating the use of electronic Fuses (eFuses), and a design structure on which the subject circuit resides are provided. A primary chip includes an adaptive power supply (APS). A secondary chip circuit includes at least one pair of hard-wired APS setting connections. Each hard-wired APS setting connection is defined by a selected one of a voltage supply connection and a ground potential connection. A respective inverter couples a control signal from each of the hard-wired APS setting connections to a power communication bus connected to the APS on the primary chip.
  • 3-D Single Gate Inverter

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  • US Patent:
    7868391, Jan 11, 2011
  • Filed:
    Jun 4, 2009
  • Appl. No.:
    12/478098
  • Inventors:
    Phil Christopher Felice Paone - Rochester MN, US
    David P. Paulsen - Dodge Center MN, US
    Kelly L. Williams - Rochester MN, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 29/76
    H01L 29/94
    H01L 31/062
    H01L 31/113
    H01L 31/119
    H01L 27/01
    H01L 27/12
    H01L 31/0392
    H01L 23/62
  • US Classification:
    257369, 257335, 257338, 257341, 257350, 257351, 257357, 257371, 257401, 257E27026, 257E27027, 257E27059, 257E2706, 257E27062, 257E27064
  • Abstract:
    A 3-D (Three Dimensional) inverter having a single gate electrode. The single gate electrode has a first gate dielectric between the gate electrode and a body of a first FET (Field Effect transistor) of a first doping type, the first FET having first source/drain regions in a semiconductor substrate, or in a well in the semiconductor substrate. The single gate electrode has a second gate dielectric between the gate electrode and a body of a second FET of opposite doping to the first FET. Second source/drain regions of the second FET are formed from epitaxial layers grown over the first source/drain regions.
  • Implementing Efuse Resistance Determination Before Initiating Efuse Blow

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  • US Patent:
    7915949, Mar 29, 2011
  • Filed:
    Mar 12, 2009
  • Appl. No.:
    12/403158
  • Inventors:
    Karl Robert Erickson - Rochester MN, US
    Phil Christopher Felice Paone - Rochester MN, US
    David Paul Paulsen - Dodge Center MN, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01H 37/76
    H01H 85/00
  • US Classification:
    327525
  • Abstract:
    A method and an eFuse programming circuit for implementing resistance determination of an eFuse before initiating eFuse blow, and a design structure on which the subject circuit resides are provided. An eFuse on a chip is used to set current flow through a known resistor and measure the eFuse resistance. An applied voltage to program selected eFuses on the chip is selected responsive to an identified eFuse voltage value.
  • Bias Temperature Instability-Influenced Storage Cell

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  • US Patent:
    8107309, Jan 31, 2012
  • Filed:
    Jul 17, 2009
  • Appl. No.:
    12/505102
  • Inventors:
    Douglas M. Dewanz - Rochester MN, US
    Peter T. Freiburger - Rochester MN, US
    David P. Paulsen - Dodge Center MN, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    G11C 7/04
  • US Classification:
    365211, 36518909
  • Abstract:
    In a method of using a memory cell employing a field effect transistor (FET), the FET is heated to a first temperature sufficient to support bias temperature instability in the FET. The bit line is driven to a high voltage state. The word line is driven to a predetermined voltage state that causes bias temperature instability in the FET. The temperature, the high voltage state on the bit line and the predetermined voltage state on the word line are maintained for an amount of time sufficient to change a threshold voltage of the FET to a state where a desired data value is stored on the FET. The FET is cooled to a second temperature that is cooler than the first temperature after the amount of time has expired.
  • Method For Creating 3-D Single Gate Inverter

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  • US Patent:
    8114747, Feb 14, 2012
  • Filed:
    Nov 10, 2010
  • Appl. No.:
    12/943146
  • Inventors:
    Phil Christopher Felice Paone - Rochester MN, US
    David P. Paulsen - Dodge Center MN, US
    Kelly L. Williams - Rochester MN, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 21/336
  • US Classification:
    438300, 438303, 438305, 438481, 257327, 257E21634
  • Abstract:
    A 3-D (Three Dimensional) inverter having a single gate electrode. The single gate electrode has a first gate dielectric between the gate electrode and a body of a first FET (Field Effect transistor) of a first doping type, the first FET having first source/drain regions in a semiconductor substrate, or in a well in the semiconductor substrate. The single gate electrode has a second gate dielectric between the gate electrode and a body of a second FET of opposite doping to the first FET. Second source/drain regions of the second FET are formed from epitaxial layers grown over the first source/drain regions.
  • Enhanced Field Effect Transistor

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  • US Patent:
    8138054, Mar 20, 2012
  • Filed:
    Apr 1, 2009
  • Appl. No.:
    12/416264
  • Inventors:
    David Howard Allen - Rochester MN, US
    Todd Alan Christensen - Rochester MN, US
    David Paul Paulsen - Dodge Center MN, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 21/336
  • US Classification:
    438300, 438478, 257287, 257E21634
  • Abstract:
    An enhanced FET capable of controlling current above and below a gate of the FET. The FET is formed on a semiconductor substrate. A source and drain are formed in the substrate (or in a well in the substrate). A first epitaxial layer of similar doping to the source and drain are grown on the source and drain, the first epitaxial layer is thicker than the gate, but not so thick as to cover the top of the gate. A second epitaxial layer of opposite doping is grown on the first epitaxial layer thick enough to cover the top of the gate. The portion of the second epitaxial layer above the gate serves as a body through which the gate controls current flow between portions of the first epitaxial layer over the drain and the source.
  • Vertical Stacking Of Field Effect Transistor Structures For Logic Gates

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  • US Patent:
    8314001, Nov 20, 2012
  • Filed:
    Apr 9, 2010
  • Appl. No.:
    12/757145
  • Inventors:
    Todd Alan Christensen - Rochester MN, US
    Phil Christopher Felice Paone - Rochester MN, US
    David Paul Paulsen - Dodge Center MN, US
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    H01L 21/336
  • US Classification:
    438300, 438481, 257E21619, 257E21629
  • Abstract:
    Vertically stacked Field Effect Transistors (FETs) are created where a first FET and a second FET are controllable independently. The vertically stacked FETs may be connected in series or in parallel, thereby suitable for use as a portion of a NAND circuit or a NOR circuit. Epitaxial growth over a source and drain of a first FET, and having similar doping to the source and drain of the first FET provide a source and drain of a second FET. An additional epitaxial growth of a type opposite the doping of the source and drain of the first FET provides a body for the second FET.

License Records

David Thomas Paulsen

License #:
5091 - Expired
Issued Date:
Mar 14, 1979
Renew Date:
May 31, 2000
Expiration Date:
May 31, 2000
Type:
Certified Public Accountant

Lawyers & Attorneys

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David Paulsen - Lawyer

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Office:
David E. Paulsen
Specialties:
General Practice
ISLN:
904547878
Admitted:
1975
University:
California State University, B.A.
Law School:
McGeorge School of Law, J.D.
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David Paulsen - Lawyer

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Office:
Paulsen Law Group
Specialties:
Admiralty and Maritime
Advocacy
Civil Trial
Litigation
Maritime Accidents
Maritime Personal Injury
Medical Malpractice
Occupational Safety and Health
Personal Injury
Probate and
Probate and Trust Litigation
Product
Business
Product Liability
Criminal Defense
Trial Advocacy
Employment & Labor
Trial Lawyers
Wrongful Death
Admiralty and Maritime
Occupational Safety and Health
Personal Injury
ISLN:
916915849
Admitted:
2001
Law School:
Western New England College School of Law, J.D., 2001

Isbn (Books And Publications)

Pollution and Public Policy: A Book of Readings

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Author
David F. Paulsen

ISBN #
0396066259

Natural Resources in the Governmental Process: A Bibliography Selected and Annotated

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Author
David F. Paulsen

ISBN #
0816502633

Critical Reasoning: Understanding and Criticizing Arguments and Theories

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Author
David Paulsen

ISBN #
0534519407

Critical Reasoning: Understanding and Criticizing Arguments and Theories

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Author
David W. Paulsen

ISBN #
0534009654

Critical Reasoning: Understanding and Criticizing Arguments and Theories

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Author
David W. Paulsen

ISBN #
0534056164

Critical Reasoning: Understanding and Criticizing Arguments and Theories

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Author
David W. Paulsen

ISBN #
0534146880

Critical Reasoning: Understanding and Criticizing Arguments and Theories

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Author
David W. Paulsen

ISBN #
0534504108

Critical Reasoning: Understanding and Criticizing Arguments and Theories

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Author
David W. Paulsen

ISBN #
0534605079

Wikipedia References

David Paulsen Photo 11

David Paulsen

Work:
Position:

Screenwriter • American television producer

Education:
Specialty:

Director

Skills & Activities:
Activity:

Soap opera writer • Operas

Wikipedia

Dynasty (TV series)

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…The ninth and final 19881989 season brought a move from Wednesday to Thursday, and new Executive Supervising Producer David Paulsen, who took over the plotting of the series. In a money-saving move, Evans appeared in only six episodes early in the season as an ailing Krystle seeks brain surg...

Flickr

Facebook

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David Paulsen

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David Paulsen

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David Paulsen

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David J Paulsen

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David Paulsen

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David Paulsen

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David R. Paulsen

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David Paulsen

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Plaxo

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David Paulsen

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Mountain View, CA

Youtube

Book of Revelation (2002) Part 1

David Pawson Teaching Trust 2020 Free resources and a library of David...

  • Duration:
    1h 30m 10s

David Pawson - Does God Love Everyone?

  • Duration:
    9m 29s

The Final Facts Part 1 - The Return of Christ 1

David Pawson Teaching Trust 2020 Free resources and a library of David...

  • Duration:
    45m 23s

David Pawson - Genesis [1] The Basic Book - U...

  • Duration:
    39m 33s

Joseph Smith and the Problem of Evil | David ...

Who is Joseph Smith? Examining the life of Joseph Smith can help us le...

  • Duration:
    44m 44s

Anointed and Filled with The Holy Spirit

David Pawson teaches about being anointed and filled with the Holy Spi...

  • Duration:
    1h 26m 28s

Myspace

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David Paulsen

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Locality:
PORTLAND, Dayfidian Islands
Gender:
Male
Birthday:
1937
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David Paulsen

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Locality:
South Shields, United Kingdom
Gender:
Male
Birthday:
1943
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David Paulsen

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Locality:
Marietta, Georgia
Gender:
Male
Birthday:
1949
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David Paulsen

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David Paulsen

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Locality:
SEDRO WOOLLEY
Gender:
Male
Birthday:
1949
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david paulsen

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Locality:
Las Vegas, Nevada
Gender:
Male
Birthday:
1935
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David Paulsen

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Locality:
FAIr OaKs, California
Gender:
Male
Birthday:
1943
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david paulsen

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Locality:
CHICAGO, Illinois
Gender:
Male
Birthday:
1910

Classmates

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David Paulsen

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Schools:
Jack Benny Middle School Waukegan IL 1969-1973
Community:
Karen Petruska, Sandy Cantrell, Leonard Spicer, Mary Reynolds, Dian Bauer
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David Paulsen

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Schools:
Sequim Middle School Sequim WA 1972-1976, Sequim High School Sequim WA 1977-1980
Community:
John Jury, Sue Neal
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David Paulsen

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Schools:
Wilder High School Wilder ID 1957-1969
Community:
Cathi Anderson, Diana Campos, Dave Bryner, David Morgan, Richard Agenbroad
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David Paulsen

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Schools:
Albion High School Albion MI 1987-1991
Community:
Rhonda Little, Loretta Conley
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David Paulsen

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Schools:
Pine Grove Elementary School Pine Grove CA 1966-1969, Pioneer Junior High School Pioneer CA 1967-1969, Linda Vista Elementary School Fremont CA 1968-1969, William Hopkins Junior High School Fremont CA 1969-1969, American Heritage High School Hayward CA 1969-1971, Calvary Baptist School Fremont CA 1971-1974
Community:
Dianna Booker, Nicole Schupp, Cindy Winters, Janet Sweeney
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David Paulsen

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Schools:
Brookside Elementary School Medford WI 1960-1967
Community:
Ronald Reese, Mandi Viergutz, Troy Liske, Carol Brugge, Roxanne Acker, Cindy Zenner
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David Paulsen

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Schools:
Sequim High School Sequim WA 1976-1980
Community:
John Jury, Sue Neal
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David Paulsen

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Schools:
Puyallup Alternative School Puyallup WA 1987-1991
Community:
Leslie Hanby

Googleplus

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David Paulsen

Education:
Foothill College - Humanities
About:
  Author, Traveler, and now Retired.
Bragging Rights:
Graduated with High Honors
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David Paulsen

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David Paulsen

About:
I grew up in a military community and joined the military right out of high school, this is where I developed my political views. I have one son, who is my pride and joy. I love to read and am current...
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David Paulsen

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David Paulsen

Tagline:
Whatevah! I do what I want!
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David Paulsen

Tagline:
Boulder City United Methodist Missions & Outreach coordinator
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David Paulsen

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David Paulsen

News

DAHLIN v. FABIAN

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  • Joan Fabian, DOC Commissioner; Jessica Symmes, MCF-OPH Warden; David Paulsen, DOC Medical Director; Nanette Larson, DOC Health Service Supervisor; Barbara Nelson, DOC-RN-OPH Medical Supervisor; Keith Krueger, MD-CMS Inc.-OPH Regional Medical Director; ...

OSU has plenty of depth, weapons at receiver

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  • And with Todd Monken's new wrinkles added to the offense, tight ends Justin Horton and Wilson Youman and fullbacks Kye Staley and David Paulsen have also caught at least one pass this season. That makes it virtually impossible to focus on just stopping ...

Plein Air Exhibit Shows Sagamore Hill Visions

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  • Ron Zeller announced the winners of the contest: David Paulsen, Grand Prize- Best in Show who won the $1000 prize; Cesar Santos, Best in Oils; Janet Cook, Best in Pastels; and Loraine Volz, Best in Water Media. As to the reason for the contest, ...

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