David J Perkins

US Patent:

20180151368, May 31, 2018

Filed:

Jan 8, 2018

Appl. No.:

15/865143

Inventors:

- Houston TX, US
Aditya B. Nayak - Humble TX, US
David L. Perkins - The Woodlands TX, US

International Classification:

H01L 21/265
H01L 21/66
H01L 21/67
H01J 37/317
G02B 5/28
G01B 11/06
C23C 14/00
C23C 14/48
C23C 14/22
C23C 14/18
C23C 14/16
C23C 14/06

Abstract:

Systems and methods of engineering the optical properties of an optical Integrated Computational Element device using ion implantation during fabrication are provided. A system as disclosed herein includes a chamber, a material source contained within the chamber, an ion source configured to provide a high-energy ion beam, a substrate holder to support a multilayer stack of materials that form the Integrated Computational Element device, a measurement system, and a computational unit. The material source provides a material layer to the multilayer stack, and at least a portion of the ion beam is deposited in the material layer according to an optical value provided by the measurement system.

US Patent:

20160260612, Sep 8, 2016

Filed:

Apr 24, 2014

Appl. No.:

14/428722

Inventors:

- Houston TX, US
Aditya B. Nayak - Humble TX, US
David L. Perkins - The Woodlands TX, US

Assignee:

Halliburton Energy Services, Inc. - Houston TX

International Classification:

H01L 21/265
H01L 21/67
G01B 11/06
C23C 14/16
C23C 14/18
H01J 37/317
H01L 21/66
C23C 14/48

Abstract:

Systems and methods of engineering the optical properties of an optical Integrated Computational Element device using ion implantation during fabrication are provided. A system as disclosed herein includes a chamber, a material source contained within the chamber, an ion source configured to provide a high-energy ion beam, a substrate holder to support a multilayer stack of materials that form the Integrated Computational Element device, a measurement system, and a computational unit. The material source provides a material layer to the multilayer stack, and at least a portion of the ion beam is deposited in the material layer according to an optical value provided by the measurement system.

US Patent:

20160223712, Aug 4, 2016

Filed:

Dec 24, 2013

Appl. No.:

14/397719

Inventors:

- Houston TX, US
Aditya B. NAYAK - Humble TX, US
David L. PERKINS - The Woodlands TX, US

Assignee:

HALLIBURTON ENERGY SERVICES, INC. - Houston TX

International Classification:

G01V 13/00
G01N 21/21
G01N 21/27
G01V 8/12
G01N 21/59

Abstract:

Techniques include receiving a design of an integrated computational element (ICE) including specification of a substrate and a plurality of layers, their respective target thicknesses and complex refractive indices, complex refractive indices of adjacent layers being different from each other, and a notional ICE fabricated in accordance with the ICE design being related to a characteristic of a sample; forming at least some of the layers of a plurality of ICEs in accordance with the ICE design using a deposition source, where the layers of the ICEs being formed are supported on a support that is periodically moved relative to the deposition source during the forming; monitoring characteristics of the layers of the ICEs during the forming, the monitoring of the characteristics being performed using a timing of the periodic motion of the support relative to the deposition source; and adjusting the forming based on results of the monitoring.

US Patent:

20160224016, Aug 4, 2016

Filed:

Feb 14, 2014

Appl. No.:

14/414653

Inventors:

- Houston TX, US
Aditya B. Nayak - Humble TX, US
David L. Perkins - The Woodlands TX, US

Assignee:

HALLIBURTON ENERGY SERVICES, INC. - Houston TX

International Classification:

G05B 19/4099

Abstract:

Technologies are described for monitoring characteristics of layers of integrated computational elements (ICEs) during fabrication using an in-situ spectrometer operated in step-scan mode in combination with lock-in or time-gated detection. As part of the step-scan mode, a wavelength selecting element of the spectrometer is discretely scanned to provide spectrally different instances of probe-light, such that each of the spectrally different instances of the probe-light is provided for a finite time interval. Additionally, an instance of the probe-light interacted during the finite time interval with the ICE layers includes a modulation that is being detected by the lock-in or time-gated detection over the finite time interval.

US Patent:

20160130696, May 12, 2016

Filed:

May 8, 2014

Appl. No.:

14/432844

Inventors:

- Houston TX, US
Aditya B. Nayak - Humble TX, US
David L. Perkins - The Woodlands TX, US

Assignee:

Halliburton Energy Services, Inc. - Houston TX

International Classification:

C23C 14/54
G01B 11/06
G02B 1/12
G01N 21/41
C23C 14/30
G02B 5/28

Abstract:

Systems and methods of controlling a deposition rate during thin-film fabrication are provided. A system as provided may include a chamber, a material source contained within the chamber, an electrical component to activate the material source, a substrate holder to support the multilayer stack and at least one witness sample. The system may further include a measurement device and a computational unit. The material source provides a layer of material to the multilayer stack and to the witness sample at a deposition rate controlled at least partially by the electrical component and based on a correction value obtained in real-time by the computational unit. In some embodiments, the correction value is based on a measured value provided by the measurement device and a computed value provided by the computational unit according to a model.