David Pitman

US Patent:

20130260543, Oct 3, 2013

Filed:

Mar 15, 2013

Appl. No.:

13/832715

Inventors:

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - , US
Richard M. White - Newmarket NH, US
Svetlana B. Radovanov - Brookline MA, US
Kevin M. Daniels - Lynnfield MA, US
Eric R. Cobb - Danvers MA, US
David W. Pitman - Beverly MA, US

Assignee:

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA

International Classification:

H01L 21/265

US Classification:

438515, 118726, 118723 ER, 118712

Abstract:

Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized with an ion implantation system for processing a substrate. The ion implantation system may comprise: an ion source comprising an ion source chamber, the ion source chamber including an ion source chamber wall that define an ion generation region and an extraction aperture, through which ions generated in the ion generation region are extracted; an extraction system positioned downstream of the ion source near the extraction aperture; a material source comprising a fist source containing first material, a second source containing the second material, and a first and second conduits, where the first conduit may be in communication with the first source and the ion source chamber to provide the first material from the first source to the ion source chamber, and where the second conduit may be in communication with the second source and a first region outside of the ion source chamber to provide the second material from the second source to the first region.

US Patent:

20130260544, Oct 3, 2013

Filed:

Mar 15, 2013

Appl. No.:

13/832578

Inventors:

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - , US
Richard M. White - Newmarket NH, US
Svetlana B. Radovanov - Brookline MA, US
Kevin M. Daniels - Lynnfield MA, US
Eric R. Cobb - Danvers MA, US
David W. Pitman - Beverly MA, US

Assignee:

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA

International Classification:

H01L 21/265

US Classification:

438527, 438514

Abstract:

Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate.

US Patent:

20150179455, Jun 25, 2015

Filed:

Feb 27, 2015

Appl. No.:

14/633904

Inventors:

- Gloucester MA, US
Richard M. White - Newmarket NH, US
Svetlana B. Radovanov - Brookline MA, US
Kevin M. Daniels - Lynnfield MA, US
Eric R. Cobb - Danvers MA, US
David W. Pitman - Beverly MA, US

International Classification:

H01L 21/265
C23C 14/48

Abstract:

Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate.