David S Rich

US Patent:

6428713, Aug 6, 2002

Filed:

Oct 1, 1999

Appl. No.:

09/410713

Inventors:

John Carl Christenson - Kokomo IN
Steven Edward Staller - Russiaville IN
John Emmett Freeman - Kempton IN
Troy Allan Chase - Kokomo IN
Robert Lawrence Healton - Kokomo IN
David Boyd Rich - Kokomo IN

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

H01L 2100

US Classification:

216 2, 216 33, 216 41, 216 59, 216 67, 216 79, 438719, 438735

Abstract:

A micro-electro-mechanical structure including a semiconductor layer mounted to an annular support structure via an isolation layer wherein the semiconductor layer is micromachined to form a suspended body having a plurality of suspension projections extending from the body to the rim and groups of integral projections extending toward but spaced from the rim between said suspension projections. Each projection in said groups has a base attached to the body and a tip proximate the rim. The structure includes a plurality of inward projections extending from and supported on the rim and toward the body. Each such projection has a base attached to the rim and a tip proximate the body; wherein the grouped projections and the inward projections are arranged in an interdigitated fashion to define a plurality of proximate projection pairs independent of the suspension elements such that a primary capacitive gap is defined between the projections of each projection pair. Also, a process is disclosed for fabricating the micro-electro-mechanical structure including the steps of removing a highly doped etch termination layer and thereafter etching through a lightly doped epitaxial layer to thereby define and release the structure.

US Patent:

6685844, Feb 3, 2004

Filed:

Feb 14, 2001

Appl. No.:

09/782393

Inventors:

David Boyd Rich - Kokomo IN
John C. Christenson - Kokomo IN

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

B81C 100

US Classification:

216 2, 216 67, 216 79, 257415, 438 52

Abstract:

A process for forming a microelectromechanical system (MEMS) device by a deep reactive ion etching (DRIE) process during which a substrate overlying a cavity is etched to form trenches that breach the cavity to delineate suspended structures. A first general feature of the process is to define suspended structures with a DRIE process, such that the dimensions desired for the suspended structures are obtained. A second general feature is the proper location of specialized features, such as stiction bumps, vulnerable to erosion caused by the DRIE process. Yet another general feature is to control the environment surrounding suspended structures delineated by DRIE in order to obtain their desired dimensions. A significant problem identified and solved by the invention is the propensity for the DRIE process to etch certain suspended features at different rates. In addition to etching wider trenches more rapidly than narrower trenches, the DRIE process erodes suspended structures more rapidly at greater distances from anchor sites of the substrate being etched.

US Patent:

6942735, Sep 13, 2005

Filed:

Jul 18, 2003

Appl. No.:

10/622531

Inventors:

David D. Rich - Zionsville IN, US

Assignee:

Rich Roofing Systems, Inc. - Zionsville IN

International Classification:

B05B001/00

US Classification:

118313, 118323, 239147, 239159, 239164, 239170, 239176, 239550

Abstract:

An adjustable spray apparatus with multiple outlet for applying a flowable coating onto a non-vertical surface. A carriage includes an outwardly extending arm with a plurality of downwardly facing spray tips connected to a manifold mounted on the carriage. The manifold, in turn, is connected to a remotely located reservoir of flowable material. An auxiliary spray gun in connected to the manifold.

US Patent:

7026645, Apr 11, 2006

Filed:

Oct 15, 2003

Appl. No.:

10/686299

Inventors:

John C. Christenson - Kokomo IN, US
David B. Rich - Kokomo IN, US

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

H01L 29/40
H01L 29/88

US Classification:

257 46, 257704

Abstract:

The present invention involves an electrical verification method that detects moisture within the cavity of the semiconductor or micro-machined device. The method affects an increase in the time for sufficient water vapor to remain within an unsealed device, so that instability in the diode can be measurable over a longer period of time. The method begins with the step of forming at least one reservoir on at least one of the device wafer and the capping wafer. The at least one reservoir connects to at least one diffusion channel, which is in communication with at least one reservoir port. The method further includes the steps of forming a PN junction diode adjacent to the at least one reservoir port; bonding the device wafer with the capping wafer to form a cavity; and electrically testing the PN junction diode as an indication of the presence of moisture within the cavity. The device assembly of the present invention includes a capping wafer bonded on a device wafer to form a cavity; at least one reservoir including at least one diffusion channel for receiving a liquid and retaining moisture. The at least one diffusion channel communicates with at least one reservoir port, which is open into the cavity.

US Patent:

7077007, Jul 18, 2006

Filed:

Nov 18, 2003

Appl. No.:

10/715758

Inventors:

David Boyd Rich - Kokomo IN, US
John C. Christenson - Kokomo IN, US

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

G01P 15/00
G01P 15/125
G01P 15/14
G01P 9/00

US Classification:

7351402, 7351402, 7351432, 7350418, 7350412

Abstract:

A process for forming a microelectromechanical system (MEMS) device by a deep reactive ion etching (DRIE) process during which a substrate overlying a cavity is etched to form trenches that breach the cavity to delineate suspended structures. A first general feature of the process is to define suspended structures with a DRIE process, such that the dimensions desired for the suspended structures are obtained. A second general feature is the proper location of specialized features, such as stiction bumps, vulnerable to erosion caused by the DRIE process. Yet another general feature is to control the environment surrounding suspended structures delineated by DRIE in order to obtain their desired dimensions. A significant problem identified and solved by the invention is the propensity for the DRIE process to etch certain suspended features at different rates. In addition to etching wider trenches more rapidly than narrower trenches, the DRIE process erodes suspended structures more rapidly at greater distances from anchor sites of the substrate being etched.

US Patent:

7371601, May 13, 2008

Filed:

May 12, 2005

Appl. No.:

11/127457

Inventors:

David B. Rich - Kokomo IN, US
Steven M. Crist - Lafayette IN, US

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

H01L 21/00
G01P 15/00

US Classification:

438 52, 7351436

Abstract:

A technique for manufacturing a piezoresistive sensing structure includes a number of process steps. Initially, a piezoresistive element is implanted into a first side of an assembly that includes a semiconductor material. A passivation layer is then formed on the first side of the assembly over the element. The passivation layer is then removed from selected areas on the first side of the assembly. A first mask is then provided on the passivation layer in a desired pattern. A beam, which includes the element, is then formed in the assembly over at least a portion of the assembly that is to provide a cavity. The passivation layer provides a second mask, in the formation of the beam, that determines a width of the formed beam.

US Patent:

20020125208, Sep 12, 2002

Filed:

May 9, 2002

Appl. No.:

10/141740

Inventors:

John Christenson - Kokomo IN, US
Steven Staller - Russiaville IN, US
John Freeman - Kempton IN, US
Troy Chase - Kokomo IN, US
Robert Healton - Kokomo IN, US
David Rich - Kokomo IN, US

Assignee:

DELPHI TECHNOLOGIES, INC.

International Classification:

C23F001/00

US Classification:

216/002000

Abstract:

A micro-electro-mechanical structure including a semiconductor layer mounted to an annular support structure via an isolation layer wherein the semiconductor layer is micromachined to form a suspended body having a plurality of suspension projections extending from the body to the rim and groups of integral projections extending toward but spaced from the rim between said suspension projections. Each projection in said groups has a base attached to the body and a tip proximate the rim. The structure includes a plurality of inward projections extending from and supported on the rim and toward the body. Each such projection has a base attached to the rim and a tip proximate the body; wherein the grouped projections and the inward projections are arranged in an interdigitated fashion to define a plurality of proximate projection pairs independent of the suspension elements such that a primary capacitive gap is defined between the projections of each projection pair. Also, a process is disclosed for fabricating the micro-electro-mechanical structure including the steps of removing a highly doped etch termination layer and thereafter etching through a lightly doped epitaxial layer to thereby define and release the structure.

US Patent:

20050191433, Sep 1, 2005

Filed:

Apr 22, 2005

Appl. No.:

11/112491

Inventors:

David Rich - Zionsville IN, US

International Classification:

B05D007/00

US Classification:

427421100, 118313000, 118668000, 118300000

Abstract:

An adjustable spray apparatus with multiple outlet for applying a flowable coating onto a non-vertical surface. A carriage includes an outwardly extending arm with a plurality of downwardly facing spray tips connected to a manifold mounted on the carriage. The manifold, in turn, is connected to a remotely located reservoir of flowable material. An auxiliary spray gun in connected to the manifold.