David R. Robillard - Westboro MA Robert L. Michals - Marlboro MA
Assignee:
Raytheon Company - Lexington MA
International Classification:
H05K 502
US Classification:
174 52FP
Abstract:
A semiconductor integrated circuit device of the beam lead type having a semiconductor interconnection substrate with apertures for integrated circuit chips therein and with metallization patterns having sharply pointed ends for penetrating oxide layers over the bonding pads of the chips and for making electrical connection thereto. Devices thus produced may be assembled and tested and failed chips replaced as necessary before the chips are ultrasonically welded to the interconnection metallization and before final fabrication of the device. The invention also includes a method for producing an interconnection substrate in which a plurality of conically shaped holes are etched into a semiconductor wafer having sharp points within the body of the wafer. A metal layer is deposited over the surface of the semiconductor wafer filling the etched holes. Sharp points are thus formed on the metal in the etched holes.
David R. Robillard - Westboro MA Robert L. Michaels - Marlboro MA
Assignee:
Raytheon Company - Lexington MA
International Classification:
B01J 1700
US Classification:
29574
Abstract:
A semiconductor integrated circuit device of the beam lead type having a semiconductor interconnection substrate with apertures for integrated circuit chips therein and with metallization patterns having sharply pointed ends for penetrating oxide layers over the bonding pads of the chips and for making electrical connection thereto. Devices thus produced may be assembled and tested and failed chips replaced as necessary before the chips are ultrasonically welded to the interconnection metallization and before final fabrication of the device. The invention also includes a method for producing an interconnection substrate in which a plurality of conically shaped holes are etched into a semiconductor wafer having sharp points within the body of the wafer. A metal layer is deposited over the surface of the semiconductor wafer filling the etched holes. Sharp points are thus formed on the metal in the etched holes.
David R. Robillard - Westboro MA Robert L. Michals - Marlboro MA
Assignee:
Raytheon Company - Lexington MA
International Classification:
H01L 21603
US Classification:
29589
Abstract:
A semiconductor integrated circuit device of the beam lead type having a semiconductor interconnection substrate with apertures for integrated circuit chips therein and with metallization patterns having sharply pointed ends for penetrating oxide layers over the bonding pads of the chips and for making electrical connection thereto. Devices thus produced may be assembled and tested and failed chips replaced as necessary before the chips are ultrasonically welded to the interconnection metallization and before final fabrication of the device. The invention also includes a method for producing an interconnection substrate in which a plurality of conically shaped holes are etched into a semiconductor wafer having sharp points within the body of the wafer. A metal layer is deposited over the surface of the semiconductor wafer filling the etched holes. Sharp points are thus formed on the metal in the etched holes.
David R. Robillard - Westboro MA Robert J. Bullock - Chelmsford MA Jerry C. Marino - Sudbury MA
Assignee:
Prime Computer, Inc. - Natick MA
International Classification:
E04G 300
US Classification:
248285
Abstract:
A support for a CRT monitor provides translational movement for the monitor in two perpendicular directions. The support is on rollers for movement over a horizontal surface, and includes telescoping arms for movement in a first direction. One of the arms enters an elongate guide channel mountable on the surface and includes rollers for rolling along a vertical wall of the channel so that the support moves in a second direction perpendicular to the first. The channel includes a cover and end walls.
David R. Robillard - Westboro MA Robert L. Michals - Marlboro MA
Assignee:
Raytheon Company - Lexington MA
International Classification:
H05K 502 H05K 102
US Classification:
174 52FP
Abstract:
A semiconductor integrated circuit device of the beam lead type having a semiconductor interconnection substrate with apertures for integrated circuit chips therein and with metallization patterns having sharply pointed ends for penetrating oxide layers over the bonding pads of the chips and for making electrical connection thereto. Devices thus produced may be assembled and tested and failed chips replaced as necessary before the chips are ultrasonically welded to the interconnection metallization and before final fabrication of the device. The invention also includes a method for producing an interconnection substrate in which a plurality of conically shaped holes are etched into a semiconductor wafer having sharp points within the body of the wafer. A metal layer is deposited over the surface of the semiconductor wafer filling the etched holes. Sharp points are thus formed on the metal in the etched holes.
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