David C Robillard

Address:

12597 N Ln Cholla Blvd, Tucson, AZ 85755

VIN:

2A4GP54L57R153320

Make:

CHRYSLER

Model:

TOWN AND COUNTRY

Year:

2007

US Patent:

8412482, Apr 2, 2013

Filed:

Dec 3, 2009

Appl. No.:

12/630007

Inventors:

David C. Robillard - Oro Valley AZ, US
Gregory E. Longerich - Oro Valley AZ, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

G01P 15/00
G06F 15/00

US Classification:

702141, 307 101, 345157, 701 29, 701 46, 702151

Abstract:

An electronic acceleration switch, such as for arming and firing a squib, for instance used in arming a warhead, safe missile air, ground and sea launch separation arming, includes multiple redundancies to provide a fail-safe system that does not have a single-point failure. The switch includes different channels, each of which includes a power subsystem, multiple accelerometers, a pair of controllers, and a switching circuit. The power subsystems of the two channels provide power to multiple accelerometers of each channel. The accelerometers of each channel may include a mix of digital and analog accelerometers. The acceleration sensors can be either one-axis or three-axis sensors. The accelerometers are connected to the controllers of both channels. The controllers provide redundancy for each channel. In addition, the controllers include voting logic that receives inputs from the accelerometers, and determines whether to send arm and enable signals to the multiple squib drivers.

US Patent:

20130254442, Sep 26, 2013

Filed:

Mar 22, 2012

Appl. No.:

13/426702

Inventors:

David C. Robillard - Tucson AZ, US
Joseph D. Wagovich - Tucson AZ, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

G06F 13/14

US Classification:

710107

Abstract:

A system includes an interface with a plurality of sub-addresses. The interface receives critical data and non-critical data. The critical data are received only at more specific sub-addresses of the interface. The interface transfers the critical data received at the sub-addresses to a critical processor, such that the critical data avoids being received by or being processed by a non-critical processor. The interface transfers the non-critical data from the interface to the non-critical processor. The configuration of the interface is hard-coded such that the configuration of the interface is fixed at power up of the interface and is non-changeable by the non-critical processor. The interface includes an external platform interface that is external to the critical processor, the non-critical processor, and a local controller. The external platform interface includes a limited ability to store the critical and non-critical data.

US Patent:

39846202, Oct 5, 1976

Filed:

Jun 4, 1975

Appl. No.:

5/583739

Inventors:

David R. Robillard - Westboro MA
Robert L. Michals - Marlboro MA

Assignee:

Raytheon Company - Lexington MA

International Classification:

H05K 502

US Classification:

174 52FP

Abstract:

A semiconductor integrated circuit device of the beam lead type having a semiconductor interconnection substrate with apertures for integrated circuit chips therein and with metallization patterns having sharply pointed ends for penetrating oxide layers over the bonding pads of the chips and for making electrical connection thereto. Devices thus produced may be assembled and tested and failed chips replaced as necessary before the chips are ultrasonically welded to the interconnection metallization and before final fabrication of the device. The invention also includes a method for producing an interconnection substrate in which a plurality of conically shaped holes are etched into a semiconductor wafer having sharp points within the body of the wafer. A metal layer is deposited over the surface of the semiconductor wafer filling the etched holes. Sharp points are thus formed on the metal in the etched holes.

US Patent:

41898257, Feb 26, 1980

Filed:

Sep 1, 1977

Appl. No.:

5/829770

Inventors:

David R. Robillard - Westboro MA
Robert L. Michaels - Marlboro MA

Assignee:

Raytheon Company - Lexington MA

International Classification:

B01J 1700

US Classification:

29574

Abstract:

A semiconductor integrated circuit device of the beam lead type having a semiconductor interconnection substrate with apertures for integrated circuit chips therein and with metallization patterns having sharply pointed ends for penetrating oxide layers over the bonding pads of the chips and for making electrical connection thereto. Devices thus produced may be assembled and tested and failed chips replaced as necessary before the chips are ultrasonically welded to the interconnection metallization and before final fabrication of the device. The invention also includes a method for producing an interconnection substrate in which a plurality of conically shaped holes are etched into a semiconductor wafer having sharp points within the body of the wafer. A metal layer is deposited over the surface of the semiconductor wafer filling the etched holes. Sharp points are thus formed on the metal in the etched holes.

US Patent:

43121179, Jan 26, 1982

Filed:

Nov 20, 1979

Appl. No.:

6/096118

Inventors:

David R. Robillard - Westboro MA
Robert L. Michals - Marlboro MA

Assignee:

Raytheon Company - Lexington MA

International Classification:

H01L 21603

US Classification:

29589

Abstract:

A semiconductor integrated circuit device of the beam lead type having a semiconductor interconnection substrate with apertures for integrated circuit chips therein and with metallization patterns having sharply pointed ends for penetrating oxide layers over the bonding pads of the chips and for making electrical connection thereto. Devices thus produced may be assembled and tested and failed chips replaced as necessary before the chips are ultrasonically welded to the interconnection metallization and before final fabrication of the device. The invention also includes a method for producing an interconnection substrate in which a plurality of conically shaped holes are etched into a semiconductor wafer having sharp points within the body of the wafer. A metal layer is deposited over the surface of the semiconductor wafer filling the etched holes. Sharp points are thus formed on the metal in the etched holes.

US Patent:

D2824698, Feb 4, 1986

Filed:

Jul 11, 1983

Appl. No.:

6/512681

Inventors:

Joseph A. Lemoine - Charlton MA
Daniel A. Ferrara - Bantam CT
David Robillard - Westborough MA

Assignee:

Prime Computer, Inc. - Natick MA

US Classification:

D14109

US Patent:

45616191, Dec 31, 1985

Filed:

Feb 10, 1984

Appl. No.:

6/578795

Inventors:

David R. Robillard - Westboro MA
Robert J. Bullock - Chelmsford MA
Jerry C. Marino - Sudbury MA

Assignee:

Prime Computer, Inc. - Natick MA

International Classification:

E04G 300

US Classification:

248285

Abstract:

A support for a CRT monitor provides translational movement for the monitor in two perpendicular directions. The support is on rollers for movement over a horizontal surface, and includes telescoping arms for movement in a first direction. One of the arms enters an elongate guide channel mountable on the surface and includes rollers for rolling along a vertical wall of the channel so that the support moves in a second direction perpendicular to the first. The channel includes a cover and end walls.

US Patent:

40963489, Jun 20, 1978

Filed:

Mar 15, 1976

Appl. No.:

5/666826

Inventors:

David R. Robillard - Westboro MA
Robert L. Michals - Marlboro MA

Assignee:

Raytheon Company - Lexington MA

International Classification:

H05K 502
H05K 102

US Classification:

174 52FP

Abstract:

A semiconductor integrated circuit device of the beam lead type having a semiconductor interconnection substrate with apertures for integrated circuit chips therein and with metallization patterns having sharply pointed ends for penetrating oxide layers over the bonding pads of the chips and for making electrical connection thereto. Devices thus produced may be assembled and tested and failed chips replaced as necessary before the chips are ultrasonically welded to the interconnection metallization and before final fabrication of the device. The invention also includes a method for producing an interconnection substrate in which a plurality of conically shaped holes are etched into a semiconductor wafer having sharp points within the body of the wafer. A metal layer is deposited over the surface of the semiconductor wafer filling the etched holes. Sharp points are thus formed on the metal in the etched holes.