David Henry Schaefer

US Patent:

7479457, Jan 20, 2009

Filed:

Sep 8, 2005

Appl. No.:

11/220710

Inventors:

Cristian Paduraru - Fremont CA, US
Alan Jensen - White Salmon WA, US
David Schaefer - Vancouver WA, US
Robert Charatan - Portland OR, US
Tom Choi - San Jose CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/461

US Classification:

438708, 438709, 438727, 438729, 438731

Abstract:

Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydrogen stripping plasmas, hydrogen stripping plasmas exhibit lower strip rates. Inclusion of oxygen in a hydrogen stripping plasma improves both photoresist strip rate and uniformity, while maintaining a hydrogen to oxygen ratio avoids low-k dielectric material damage.

US Patent:

7622051, Nov 24, 2009

Filed:

Mar 27, 2003

Appl. No.:

10/401100

Inventors:

David M. Schaefer - Sunnyvale CA, US
Gowri P. Kota - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B44C 1/22
H01L 21/302

US Classification:

216 67, 216 74, 216 79, 438706, 438710

Abstract:

A method of etching a substrate in a plasma processing chamber is disclosed. The method includes introducing the substrate having thereon an underlying layer, an anti-reflective layer above the underlying layer, and a photo-resist layer above the anti-reflective layer into the chamber. The method also includes flowing a gas mixture into the chamber, the gas mixture includes a flow of a hydrofluorocarbon gas, a flow of fluorocarbon gas, a flow of a halogen-containing gas other than the hydrofluorocarbon gas, and a flow of oxygen gas. The method further includes striking a plasma from the gas mixture. The method additionally includes etching at least through the anti-reflective layer with the plasma.

US Patent:

D649227, Nov 22, 2011

Filed:

Sep 14, 2010

Appl. No.:

29/369871

Inventors:

David Schaefer - New York NY, US

Assignee:

Waterworks IP Co., LLC - Danbury CT

International Classification:

0201

US Classification:

D23257

US Patent:

D664631, Jul 31, 2012

Filed:

Mar 6, 2012

Appl. No.:

29/415024

Inventors:

David Schaefer - New York NY, US

Assignee:

Waterworks IP Co., LLC - Danbury CT

International Classification:

2301

US Classification:

D23253

US Patent:

D666277, Aug 28, 2012

Filed:

Mar 6, 2012

Appl. No.:

29/415023

Inventors:

David Schaefer - New York NY, US

Assignee:

Waterworks IP Co., LLC - Danbury CT

International Classification:

2301

US Classification:

D23252

US Patent:

20130052339, Feb 28, 2013

Filed:

Aug 26, 2011

Appl. No.:

13/219540

Inventors:

Hong Shih - Santa Clara CA, US
Tuochuan Huang - Saratoga CA, US
David Schaefer - Fremont CA, US
Ambarish Chhatre - San Ramon CA, US
John Daugherty - Fremont CA, US
MingHang Wu - Renton WA, US
Clifford La Croix - Livermore CA, US

International Classification:

B05D 5/12

US Classification:

4271264, 427 58

Abstract:

A method is provided for treating a bipolar ESC having a front surface and a back surface, the front surface including an anodized layer. The method includes eliminating the anodized layer, disposing a new anodized layer onto the front surface, and treating the new anodized layer with water to seal the new anodized layer.

US Patent:

20130097840, Apr 25, 2013

Filed:

Oct 20, 2011

Appl. No.:

13/277873

Inventors:

David Schaefer - Fremont CA, US
Ambarish Chhatre - San Jose CA, US
Keith William Gaff - Fremont CA, US
Sung Lee - Pleasanton CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B23P 11/00
H01L 21/3065

US Classification:

29428, 15634552

Abstract:

A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled lower base plate, an upper plate, a mounting groove surrounding a bond layer and an edge seal comprising an elastomeric band having an outer concave surface in an uncompressed state, the band mounted in the groove such that upper and lower ends of the band are axially compressed and a maximum outward bulging of the band is no greater than a predetermined distance.

US Patent:

20130098554, Apr 25, 2013

Filed:

Oct 25, 2011

Appl. No.:

13/280750

Inventors:

Rish Chhatre - San Jose CA, US
David Schaefer - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23F 1/08

US Classification:

15634527, 15634533

Abstract:

An improved gas injection assembly for mounting in a central bore of a dielectric window of an inductively coupled plasma chamber includes a window having a central bore and cylindrical recess configured to receive an annular insert having a bayonet opening. The gas injector assembly includes a gas injector, an RF shield surrounding the gas injector, and a faceplate surrounding the RF shield, the faceplate including projections at the bottom thereof for engaging the bayonet opening in the annular insert. The window and gas injection assembly are designed to avoid chipping of the window which is typically made of quartz and in prior mounting arrangements the window has a bayonet opening machined therein. Due to the brittle nature of the quartz material, the machined bayonet opening was subject to chipping when the gas injector assembly was inserted into the bayonet opening.