David A Snyder

Address:

157 Nottingham Dr, Pittsburgh, PA 15205

Phone:

4126232165

VIN:

2LMDJ6JK1CBL05074

Make:

LINCOLN

Model:

MKX

Year:

2012

US Patent:

6800136, Oct 5, 2004

Filed:

Sep 11, 2002

Appl. No.:

10/221426

Inventors:

David W. Snyder - Leechburg PA
William J. Everson - Cabot PA

Assignee:

II-VI Incorporated - Saxonburg PA

International Classification:

C30B 2504

US Classification:

117106, 117 84

Abstract:

Disclosed is an apparatus and a method for growing single crystals of materials such as silicon carbide through axial gradient transport. A source of the material ( ) is placed at one end of a reaction chamber ( ) opposite a seed crystal ( ). Separate heating elements ( and and ) are positioned at opposite ends of the reaction chamber. The reaction chamber ( ) is placed in a growth chamber ( ). By appropriately controlling the pressure in the growth chamber ( ) and the temperature of the heating elements ( ), including the temperature differential therebetween, a uniaxial temperature gradient is generated in the reaction chamber ( ). In this manner, planar isotherms are generated and a high quality crystal can be grown through a physical vapor transport process.

US Patent:

6805745, Oct 19, 2004

Filed:

Sep 11, 2002

Appl. No.:

10/221392

Inventors:

David W. Snyder - Leechburg PA
William J. Everson - Cabot PA

Assignee:

II-VI Incorporated - Saxonburg PA

International Classification:

C30B 2502

US Classification:

117105, 252 623 C, 4233282

Abstract:

Disclosed is a method for reproducibly producing large size, single crystals in a crystal growth chamber. The method includes the steps of: (a) forming a plurality of smaller size tiles of single crystals of substantially the same crystal orientation as the desired large size, single crystal; (b) assembling the plurality of smaller tiles into a structure having a larger size while minimizing gapping between adjacent tiles; (c) placing the assembly of smaller tiles formed in step (b) into a growth chamber; and (d) through a growth reaction carried out in the growth chamber, forming a large size single crystal using the assembly of smaller tiles formed in step (b) as a seed crystal for the growth reaction.

US Patent:

20050073166, Apr 7, 2005

Filed:

Oct 3, 2003

Appl. No.:

10/605506

Inventors:

David Snyder - Canton MI, US

Assignee:

FORD GLOBAL TECHNOLOGIES, LLC - Dearborn MI

International Classification:

B62D027/04

US Classification:

296035100

Abstract:

A hybrid body mount assembly is provided to mount automotive parts to a vehicle chassis. The body mount assembly is fabricated in a two-piece configuration with disparate elastomeric materials used for the upper and lower members. The hybrid material configuration both enhances noise transmission reduction and minimizes vehicle vibration. The upper body mount member is formed from micro cellular urethane to minimize noise transmission through the body mount assembly, while the lower mount member is fabricated from butyl rubber to minimize the transmission of vehicle vibrations. The hybrid material assembly achieves a 50% increase in damping without detrimentally affecting the transmission of noise.

US Patent:

20050255245, Nov 17, 2005

Filed:

Jan 10, 2005

Appl. No.:

11/032449

Inventors:

Mark Fanton - Cabot PA, US
David Snyder - Leechburg PA, US
Marek Skowronski - Murrysville PA, US

International Classification:

C23C016/00

US Classification:

427255280, 118715000

Abstract:

The halide chemical vapor deposition process deposits a chemical compound comprised of at least two different elements. The method employs a first process gas which includes a halogenated compound of a first one of the at least two different elements, and a second process gas which includes hydrogen and a second one of at least two different elements. The process gases are maintained in separation until they are contacted in a deposition chamber proximate a substrate. The gases, which are generally preheated to a temperature of less than their thermal decomposition temperatures, are contacted in a deposition region proximate the substrate, and react to generate a deposition species and a hydrogen halide which is removed. Also disclosed is an apparatus for practicing the invention.

US Patent:

20060108325, May 25, 2006

Filed:

Nov 14, 2005

Appl. No.:

11/271737

Inventors:

William Everson - Cabot PA, US
David Snyder - Leechburg PA, US
Richard Gamble - Chicora PA, US
Volker Heydemann - Lower Burrell PA, US

International Classification:

C09K 13/00
B44C 1/22
C23F 1/00

US Classification:

216088000, 051307000, 051309000, 216089000, 252079100, 252079200

Abstract:

A polishing mixture and related method of polishing a material wafer surface, such as silicon carbide, are disclosed. The polishing mixture comprises; an abrasive and an oxidizer mixed in an acidic solution. Alumina may be used as the abrasive and the polishing mixture may have a pH less than or equal to seven (7).

US Patent:

54901880, Feb 6, 1996

Filed:

Dec 30, 1994

Appl. No.:

8/366644

Inventors:

David A. Snyder - North Huntingdon PA

Assignee:

Westinghouse Electric Corporation - Pittsburgh PA

International Classification:

G21C 1900

US Classification:

376310

Abstract:

System and method for evaporating moisture from a gap defined between a heat transfer tube surrounding a repair sleeve in a nuclear steam generator. The nuclear steam generator has a heat transfer tube surrounding a repair sleeve that has been hydraulically expanded into engagement with the tube. The tube and the sleeve define a gap therebetween having moisture residing therein. The system includes an air compressor in communication with the gap for supplying air to the gap and a dryer in communication with the air compressor for drying the gas supplied to the gap. A heater in communication with the air compressor may also be provided for heating the air supplied to the gap, so that the moisture residing in the gap evaporates into the heated air. A vacuum pump in communication with the gap may be provided for decreasing the pressure of the heated air in the gap, so that substantially all the moisture evaporates from the gap and into the heated air.

US Patent:

54796997, Jan 2, 1996

Filed:

Feb 7, 1994

Appl. No.:

8/192536

Inventors:

David A. Snyder - North Huntingdon PA

Assignee:

Westinghouse Electric Corporation - Pittsburgh PA

International Classification:

B23P 1500

US Classification:

29727

Abstract:

Apparatus for expanding tubular members, such as U-shaped heat transfer tubes having ends thereof located in the confined space adjacent the curved sides of the bowl-shaped lower plenum of a typical nuclear steam generator. The apparatus includes an elongate mandrel having a flow channel therethrough in communication with a resilient tubular bladder surrounding the mandrel. The bladder is flexible about its longitudinal axis due to the ribbed construction of the wall thereof. The mandrel includes a plurality of segments, adjacent ones of the segments interconnected by a ball-and-socket joint therebetween, so that the segments swivel about respective ones of the ball-and-socket joints. In this manner, the mandrel flexes as it is inserted into the tube end located in the confined space defined by the sides of the bowl-shaped lower plenum of the steam generator. The mandrel also flexes as it traverses the upper U-bend portion of the tube.

US Patent:

53455673, Sep 6, 1994

Filed:

Jun 10, 1991

Appl. No.:

7/712285

Inventors:

Clifford O. Hayden - Jamaica Plain MA
David R. Snyder - Poughkeepsie NY
Susan B. Stillman - Poughkeepsie NY
Charles F. Webb - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 9312

US Classification:

395375

Abstract:

A system and method for modifying program status words (PSW) with overlap enabled. According to the present invention, an instruction which modifies a PSW system mask, access key, or address space code is executed with overlap enabled. This instruction generates a new PSW. The new PSW is pushed into a queue. Once the instruction is complete, the new PSW becomes an architected PSW. If the instruction does not complete, then the new PSW is discarded. Once the new PSW is pushed into the queue, subsequent instructions may execute using the new PSW. Thus, instructions which modify the PSW system mask, access key, and address space code may execute with overlap enabled.