David R Story

US Patent:

20180331713, Nov 15, 2018

Filed:

May 6, 2018

Appl. No.:

15/972164

Inventors:

- Woburn MA, US
Nuttapong SRIRATTANA - Billerica MA, US
David Ryan STORY - Ladera Ranch CA, US

International Classification:

H04B 1/44
H01L 27/12
H03K 17/693
H01L 25/18

Abstract:

Radio-frequency switch having intermediate shunt. In some embodiments, a switch assembly can include a first stack and a second stack arranged in series between a first node and a second node, and defining an intermediate node between the first stack and the second stack. Each of the first stack and the second stack can include a respective number of transistors arranged in series. The switch assembly can further include a switchable shunt path having a first end coupled to the intermediate node such that the switchable shunt path is capable of connecting the intermediate node to a second end such as a ground. In some embodiments, the first and second stacks can be configured to be the same or be different.