David J Strand

US Patent:

7113474, Sep 26, 2006

Filed:

Aug 30, 2002

Appl. No.:

10/232355

Inventors:

Stanford R. Ovshinsky - Bloomfield Hills MI, US
David Strand - Bloomfield Township MI, US
David Tsu - Auburn Hills MI, US

Assignee:

Energy Conversion Devices, Inc. - Rochester Hills MI

International Classification:

G11B 7/24
G11B 7/00

US Classification:

3692752, 369 532, 369100

Abstract:

An optical recording medium includes a crystallizing layer for enhancing the crystallization of a phase change memory layer, an energy storage layer for aiding the state transformations of a phase change memory layer, and/or a modifying element for increasing absorption and contrast at short wavelengths. An optical data storage and retrieval system containing same. Also a light-plasmon coupling lens including an optically transparent substrate having a light incident surface and a light-plasmon coupling surface opposite the light incident surface. The light-plasmon coupling surface including at least a set of circular concentric peaks/valleys which form a Fourier sinusoidal pattern in the radial direction of the circular concentric peaks/valleys. A conformal layer of metal is deposited on the light-plasmon coupling surface of the substrate and has aperture at the center of thereof through which plasmons are transmitted.

US Patent:

7292521, Nov 6, 2007

Filed:

Jun 29, 2006

Appl. No.:

11/478008

Inventors:

Stanford R. Ovshinsky - Bloomfield Hills MI, US
David Strand - Bloomfield Township MI, US
David Tsu - Auburn Hills MI, US

Assignee:

Energy Conversion Devices, Inc. - Rochester Hills MI

International Classification:

G11B 7/24
G11B 7/00

US Classification:

3692752, 369 532, 369100, 36911223, 369 1302

Abstract:

A light-plasmon coupling lens including an optically transparent substrate having a light incident surface and a light-plasmon coupling surface opposite the light incident surface. The light-plasmon coupling surface including at least a set of circular concentric peaks/valleys which form a Fourier sinusoidal pattern in the radial direction of the circular concentric peaks/valleys. A conformal layer of metal is deposited on the light-plasmon coupling surface of the substrate and has aperture at the center of thereof through which plasmons are transmitted. An optical recording medium including a light-plasmon coupling lens.

US Patent:

7388825, Jun 17, 2008

Filed:

Jun 29, 2006

Appl. No.:

11/477704

Inventors:

Stanford R. Ovshinsky - Bloomfield Hills MI, US
David Strand - Bloomfield Township MI, US
David Tsu - Auburn Hills MI, US

Assignee:

Energy Conversion Devices, Inc. - Rochester Hills MI

International Classification:

G11B 7/24
G11B 7/00

US Classification:

3692752, 369 532, 369100

Abstract:

An optical data storage and retrieval system that includes a phase change storage medium and dual energy sources. The phase change material may store information by undergoing a transformation from one structural state to another structural state through application of energy. The system is equipped with two energy sources, neither of which alone provides sufficient energy to effect the transformation. The combination of both energy sources, however, provides sufficient energy to induce the transformation needed to record information. The energy from either source may be optical, thermal, electromagnetic, mechanical or magnetic energy.

US Patent:

8048782, Nov 1, 2011

Filed:

Aug 12, 2010

Appl. No.:

12/855631

Inventors:

Stanford R. Ovshinsky - Bloomfield Hills MI, US
David Strand - Bloomfield Township MI, US
Patrick Klersy - Ortonville MI, US
Boil Pashmakov - Troy MI, US

Assignee:

Ovshinsky Innovation LLC - Bloomfield Hills MI

International Classification:

H01L 21/00

US Classification:

438482, 438485, 438772, 438777, 257E21297

Abstract:

Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

US Patent:

8101245, Jan 24, 2012

Filed:

Aug 12, 2010

Appl. No.:

12/855645

Inventors:

Stanford R. Ovshinsky - Bloomfield Hills MI, US
David Strand - Bloomfield Township MI, US
Patrick Klersy - Ortonville MI, US
Boil Pashmakov - Troy MI, US

Assignee:

Ovshinsky Innovation, LLC - Bloomfield Hills MI

International Classification:

C23C 16/00

US Classification:

427575, 427569, 427578, 427595

Abstract:

Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

US Patent:

8222125, Jul 17, 2012

Filed:

Aug 12, 2010

Appl. No.:

12/855637

Inventors:

Stanford R. Ovshinsky - Bloomfield Hills MI, US
David Strand - Bloomfield Township MI, US
Patrick Klersy - Ortonville MI, US
Boil Pashmakov - Troy MI, US

Assignee:

Ovshinsky Innovation, LLC - Bloomfield Hills MI

International Classification:

H01L 21/20
H01L 21/205
C23C 16/00
C23C 16/24
C23C 16/50
C23C 16/511

US Classification:

438485, 438 96, 118723 ME, 427255393, 427575, 427578, 427595

Abstract:

Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

US Patent:

20030006535, Jan 9, 2003

Filed:

Jun 26, 2002

Appl. No.:

10/185246

Inventors:

Michael Hennessey - South Lyon MI, US
David Strand - Bloomfield Township MI, US
Barry Clark - Ortonville MI, US
Paul Gasiorowski - Davisburg MI, US

International Classification:

B29C059/02

US Classification:

264/403000, 264/219000, 264/284000, 425/403100, 425/385000, 425/363000, 425/810000, 425/299000

Abstract:

Methods and apparatus for forming microstructures in the surface of polymeric web materials for use as optical memory substrates. The microstructures may be formed by laminating a hot stamper to a web of material with a selective time/temperature profile. The stamper may be heated to melt flow the surface of the web and stabilize before separation. The stamper may be carried by a support that is independent of the press. The web of polymeric material may be provided with a flow enhancer to improve image formation. Also described herein are methods and apparatus for making optical memory modules, such as disks, which include novel stampers, coating applicators, and finishing systems.

US Patent:

20040150135, Aug 5, 2004

Filed:

Jun 19, 2003

Appl. No.:

10/465250

Inventors:

Michael Hennessey - South Lyon MI, US
George Gutman - Birmingham MI, US
David Strand - Bloomfield Twp MI, US
Barry Clark - Ortonville MI, US

International Classification:

B29C059/02
B05D005/00

US Classification:

264/293000, 427/256000

Abstract:

The present invention provides a method for the continuous manufacturing of optical memory or optical memory substrates, and/or optical disks, which includes supplying a web of polymeric material between two mating platens, melt-forming at least one microform image, such as an information track structure for an optical device, into the web with a substantially flat stamper, heating a substantial portion of the melt formed cross section of the web of polymeric material to the melt flow temperature (T) of the polymeric material. The invention discloses several embodiments for melt-forming an information structure and depositing several layers onto information structure to produce an optical memory device.