David Darroll Swenson

US Patent:

7060989, Jun 13, 2006

Filed:

Mar 18, 2005

Appl. No.:

11/084632

Inventors:

David R. Swenson - Georgetown MA, US
John J. Hautala - Beverly MA, US
Michael E. Mack - Manchester MA, US
Martin D. Tabat - Nashua NH, US
Matthew C. Gwinn - Winchendon MA, US

Assignee:

Epion Corporation - Billerica MA

International Classification:

H01J 27/00

US Classification:

250423R, 250424

Abstract:

Apparatus and methods for improving processing of workpieces with gas-cluster ion beams and modifying the gas-cluster ion energy distribution in the GCIB. In a reduced-pressure environment, generating an energetic gas-cluster ion beam and subjecting the beam to increased pressure region.

US Patent:

7067828, Jun 27, 2006

Filed:

Jan 27, 2004

Appl. No.:

10/765246

Inventors:

David R. Swenson - Georgetown MA, US

Assignee:

Epion Corporation - Billerica MA

International Classification:

H01J 37/317

US Classification:

25049221, 250287, 250282, 438515, 427450

Abstract:

Methods and apparatus are disclosed for measuring controlling characteristics of clusters in a cluster ion beam, including average cluster ion velocity {overscore (v)}, average cluster ion mass {overscore (m)}, average cluster ion energy Ē, average cluster ion charge state {overscore (q)}, average cluster ion mass per charge.

US Patent:

7566888, Jul 28, 2009

Filed:

May 23, 2007

Appl. No.:

11/752774

Inventors:

David Richard Swenson - Georgetown MA, US

Assignee:

TEL Epion Inc. - Billerica MA

International Classification:

A61N 5/00
G21G 5/00

US Classification:

2504923, 25049223, 2504921, 2504922, 250396 R, 250396 ML, 250397, 250305, 250307, 250310, 250311, 250287, 250257, 250282, 850 9, 850 10, 427450, 427523, 2041921

Abstract:

A method and system of treating an interior surface on an internal cavity of a workpiece using a charged particle beam. A beam deflector surface of a beam deflector is placed within the internal cavity of the workpiece and is used to redirect the charged particle beam toward the interior surface to treat the interior surface.

US Patent:

62918281, Sep 18, 2001

Filed:

Dec 21, 1999

Appl. No.:

9/469068

Inventors:

Kourosh Saadatmand - Merrimac MA
David R. Swenson - Georgetown MA
William F. DiVergilio - Beverly MA
Stephen M. Quinn - Gloucester MA
Zhimin Wan - San Jose CA
Victor M. Benveniste - Gloucester MA

Assignee:

Axchlisrtechnologies, Inc. - Beverly MA

International Classification:

G21K 510
H01J 3708

US Classification:

25049221

Abstract:

An electrostatic quadrupole lens assembly (60) is provided for an ion implanter (10) having an axis (86) along which an ion beam passes, comprising: (i) four electrodes (84a-84d) oriented radially outward from the axis (86), approximately 90. degree. apart from each other, such that a first pair of electrodes (84a and 84c) oppose each other approximately 180. degree. apart, and a second pair of electrodes (84b and 84d) also oppose each other approximately 180. degree. apart; (ii) a housing (62) having a mounting surface (64) for mounting the assembly (60) to the implanter, the housing at least partially enclosing the four electrodes (84a-84d); (iii) a first electrical lead (104) for providing electrical power to the first pair of electrodes (84a and 84c); (iv) a second electrical lead (108) for providing electrical power to the second pair of electrodes (84b and 84d); and (v) a plurality of electrically insulating members (92) formed of a glass-like material, comprising at least a first electrically insulating member for attaching the first pair of electrodes (84a and 84c) to the housing, and at least a second electrically insulating member for attaching the second pair of electrodes (84b and 84d) to the housing. The plurality of electrically insulating members (92) are preferably comprised of quartz (SiO. sub. 2), or a heat resistant and chemical resistant glass material such as Pyrex. RTM.

US Patent:

61371122, Oct 24, 2000

Filed:

Sep 10, 1998

Appl. No.:

9/150177

Inventors:

Edward K. McIntyre - Franklin MA
Kevin W. Wenzel - Belmont MA
David R. Swenson - Georgetown MA
Ernst F. Scherer - Hamilton MA
William F. Divergilio - Beverly MA
Kourosh Saadatmand - Merrimac MA

Assignee:

Eaton Corporation - Cleveland OH

International Classification:

H01J 37244

US Classification:

25049221

Abstract:

An ion implanter including a time of flight energy measurement apparatus for measuring and controlling the energy of an ion beam includes an ion source for generating the ion beam, an ion acceleration assembly for accelerating the beam resulting in the beam comprising a series of ion pulses having a predetermined frequency and beam forming and directing structure for directing the ion beam at workpieces supported in an implantation chamber of the implanter. The time of flight energy measurement apparatus includes spaced apart first and second sensors, timing circuitry and conversion circuitry. The time of flight energy measurement apparatus measures an average kinetic energy of an ion included in a selected ion pulse of the ion beam. The first sensor and a second sensor are disposed adjacent the ion beam and spaced a predetermined distance apart, the second sensor being downstream of the first sensor. The first sensor generates a signal when an ion pulse of the ion beam passes the first sensor and the second sensor generates a signal when an ion pulse of the ion beam passes the second sensor.