Davide E Chiola

US Patent:

6855593, Feb 15, 2005

Filed:

Jul 11, 2002

Appl. No.:

10/193783

Inventors:

Kohji Andoh - El Segundo CA, US
Davide Chiola - Marina del Rey CA, US

Assignee:

International Rectifier Corporation - El Segundo CA

International Classification:

H01L021/8234

US Classification:

438237, 438570, 438576, 438582, 438583, 438963

Abstract:

A fabrication process for a Schottky barrier structure includes forming a nitride layer directly on a surface of an epitaxial (“epi”) layer and subsequently forming a plurality of trenches in the epi layer. The interior walls of the trenches are then deposited with a final oxide layer without forming a sacrificial oxide layer to avoid formation of a beak bird at the tops of the interior trench walls. A termination trench is etched in the same process step for forming the plurality of trenches in the active area.

US Patent:

6930371, Aug 16, 2005

Filed:

Feb 3, 2004

Appl. No.:

10/771559

Inventors:

Fabio Necco - Manhattan Beach CA, US
Davide Chiola - Marina del Rey CA, US
Kohji Andoh - El Segundo CA, US

Assignee:

International Rectifier Corporation - El Segundo CA

International Classification:

H01L031/058

US Classification:

257467, 257470, 257659

Abstract:

A temperature-sensing diode has an anode and a cathode disposed on top and an isolated, metallization layer on bottom of a diode die. For example, the temperature-sensing diode is a Schottky diode without a guard ring and any passivation, making the temperature-sensing diode inexpensive to fabricate, easy to attach in close proximity to a heat-generating device and resistant to electronic noise from high power devices and stray electronic signals. The location of the anode and cathode on the same surface of the diode package provides for easy connection, such as by wire bonds, with an external circuit for providing a constant forward bias current and for amplification of the output voltage signal by an operational amplifier. The isolated, metallization layer provides for easy attachment of the temperature-sensing diode in close proximity to heat-generating power devices. A dielectric film isolates the temperature-sensing diode from the metallization layer and underlying substrate.

US Patent:

6977208, Dec 20, 2005

Filed:

Jan 27, 2004

Appl. No.:

10/766460

Inventors:

Davide Chiola - Marina del Rey CA, US

Assignee:

International Rectifier Corporation - El Segundo CA

International Classification:

H01L021/28

US Classification:

438570, 438571, 257471, 257594

Abstract:

A trench schottky diode which includes a thin insulation layer on the sidewalls of its trenches and a relatively thicker insulation layer at the bottoms of its trenches.

US Patent:

6987305, Jan 17, 2006

Filed:

Aug 4, 2003

Appl. No.:

10/633824

Inventors:

Donald He - Redondo Beach CA, US
Ritu Sodhi - Redondo Beach CA, US
Davide Chiola - Marina del Rey CA, US

Assignee:

International Rectifier Corporation - El Segundo CA

International Classification:

H01L 29/76

US Classification:

257417, 257330, 257327

Abstract:

A semiconductor device including a schottky device and a trench type semiconductor switching device such as a MOSFET formed in a common die.

US Patent:

6991943, Jan 31, 2006

Filed:

Dec 4, 2003

Appl. No.:

10/728482

Inventors:

Kohji Andoh - El Segundo CA, US
Davide Chiola - Marina del Rey CA, US

Assignee:

International Rectifier Corporation - El Segundo CA

International Classification:

H01L 21/00

US Classification:

438 10, 438 11, 438101

Abstract:

A method for adjusting the resistivity in the surface of a semiconductive substrate including selective measurement and counter-doping of areas on a major surface of a semiconductive substrate.

US Patent:

7071525, Jul 4, 2006

Filed:

Jan 27, 2004

Appl. No.:

10/766466

Inventors:

Davide Chiola - Marina del Rey CA, US
Kohji Andoh - El Segundo CA, US
Silvestro Fimiani - Turin, IT

Assignee:

International Rectifier Corporation - El Segundo CA

International Classification:

H01L 27/095
H01L 29/47
H01L 29/812
H01L 31/07
H01L 31/108

US Classification:

257471, 257472, 257473, 257481, 257482, 257483, 257484, 257485, 257486

Abstract:

A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.

US Patent:

7091572, Aug 15, 2006

Filed:

Sep 23, 2005

Appl. No.:

11/233760

Inventors:

Kohji Andoh - El Segundo CA, US
Silvestro Fimiani - Turin, IT
Fabrizio Rue Redda - Casalle, IT
Davide Chiola - Redondo Beach CA, US

Assignee:

International Rectifier Corporation - El Segundo CA

International Classification:

H01L 29/861
H01L 31/107

US Classification:

257481, 257484, 257104, 257603

Abstract:

A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.

US Patent:

7196397, Mar 27, 2007

Filed:

Mar 4, 2005

Appl. No.:

11/073123

Inventors:

Davide Chiola - Marina Del Rey CA, US
He Zhi - El Segundo CA, US
Kohji Andoh - El Segundo CA, US
Daniel M. Kinzer - El Segundo CA, US

Assignee:

International Rectifier Corporation - El Segundo CA

International Classification:

H01L 27/02
H01L 27/04
H01L 21/02

US Classification:

257531, 257528, 257E27009, 257E2701, 257E21022, 438379, 438570

Abstract:

A semiconductor device having a termination structure, which includes at least one spiral resistor disposed within a spiral trench and connected between two power poles of the device.