Dean A Scott

US Patent:

8357263, Jan 22, 2013

Filed:

Oct 5, 2010

Appl. No.:

12/898615

Inventors:

Daniel K. Berkoh - Woodland Hills CA, US
Elena B. Woodard - Fillmore CA, US
Dean G. Scott - Mesa AZ, US

Assignee:

Skyworks Solutions, Inc. - Woburn MA

International Classification:

H01J 31/32
H01L 21/306
H01L 21/683
H01L 21/768

US Classification:

15634513, 15634528

Abstract:

Apparatus and methods for plasma etching are disclosed. In one embodiment, an apparatus for etching a plurality of features on a wafer comprises a chamber, a feature plate disposed in the chamber for holding the wafer, a gas channel configured to receive a plasma source gas, an anode disposed above the feature plate, a cathode disposed below the feature plate, a radio frequency power source configured to provide a radio frequency voltage between the anode and the cathode so as to generate plasma ions from the plasma source gas, a pump configured to remove gases and etch particulates from the chamber, and a clamp configured to clamp the wafer against the feature plate. The clamp includes at least one measurement hole for passing a portion of the plasma ions to measure a DC bias of the feature plate.

US Patent:

20120083129, Apr 5, 2012

Filed:

Oct 5, 2010

Appl. No.:

12/898576

Inventors:

Daniel K. Berkoh - Woodland Hills CA, US
Elena B. Woodard - Fillmore CA, US
Dean G. Scott - Mesa AZ, US

Assignee:

Skyworks Solutions, Inc. - Woburn MA

International Classification:

H01L 21/3065

US Classification:

438713, 15634548, 257E21218

Abstract:

Apparatus and methods for plasma etching are disclosed. In one embodiment, a method for etching a plurality of features on a wafer includes positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, and focusing the plasma ions using a plasma focusing ring. The plasma focusing ring is configured to increase a flux of plasma ions arriving at a surface of the wafer to control the formation of the plurality of features and structures associated therewith.

US Patent:

20120083130, Apr 5, 2012

Filed:

Oct 5, 2010

Appl. No.:

12/898579

Inventors:

Daniel K. Berkoh - Woodland Hills CA, US
Elena B. Woodard - Fillmore CA, US
Dean G. Scott - Mesa AZ, US

Assignee:

Skyworks Solutions, Inc. - Woburn MA

International Classification:

H01L 21/3065
H01L 21/465

US Classification:

438718, 438729, 15634529, 15634544, 257E21218, 257E21485

Abstract:

Apparatus and methods for plasma etching are disclosed. In one embodiment, a method of etching a plurality of features on a wafer includes positioning a wafer on a feature plate within a chamber of a plasma etcher, providing a plasma source gas within the chamber, providing an anode above the feature plate and a cathode below the feature plate, connecting a portion of the cathode to the feature plate, generating plasma ions using a radio frequency power source and the plasma source gas, directing the plasma ions toward the wafer using an electric field, and providing an electrode shield around the cathode. The electrode shield is configured to protect the cathode from ions directed toward the cathode including the portion of the cathode connected to the feature plate.