Watkins CxE since Jan 2013
Consultant
AAR Corp Sep 1996 - Dec 2011
Director Proposals (Defense)
GE 1990 - 1996
Purchasing compliance/manager
US Air Force 1987 - 1990
Contracts attorney
US Air Force 1983 - 1987
Judge Advocate
Education:
University of Puget Sound 1980 - 1983
JD, Law
University of California, Santa Cruz 1970 - 1973
B.A., Middle Eastern Studies
Skills:
Defense Proposal Writing Air Force Government Procurement Purchasing Aviation Military Aerospace DoD Government Contracting
Jay S. Burnham - East Fairfield VT James S. Nakos - Essex Junction VT James J. Quinlivan - Essex Junction VT Steven M. Shank - Jericho VT Deborah A. Tucker - Westford VT Beth A. Ward - Essex Junction VT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2131
US Classification:
438775, 782759, 782778
Abstract:
Methods such as Remote Plasma Nitridation (RPN) are used to introduce nitrogen into a gate dielectric layer. However, these methods yield nitrided layers where the layers are not uniform, both in cross-sectional profile and in nitrogen profile. Subjecting the nitrided layer to an additional NO anneal process increases the uniformity of the nitrided layer.
Thermal Nitrogen Distribution Method To Improve Uniformity Of Highly Doped Ultra-Thin Gate Capacitors
Jay S. Burnham - East Fairfield VT, US James S. Nakos - Essex Junction VT, US James J. Quinlivan - Essex Junction VT, US Steven M. Shank - Jericho VT, US Deborah A. Tucker - Westford VT, US Beth A. Ward - Essex Junction VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L029/76
US Classification:
257411, 257655
Abstract:
Methods such as Remote Plasma Nitridation (RPN) are used to introduce nitrogen into a gate dielectric layer. However, these methods yield nitrided layers where the layers are not uniform, both in cross-sectional profile and in nitrogen profile. Subjecting the nitrided layer to an additional NO anneal process increases the uniformity of the nitrided layer.
Dale W. Martin - Hyde Park VT, US Steven M. Shank - Jericho VT, US Michael C. Triplett - Colchester VT, US Deborah A. Tucker - Westford VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/336 H01L 21/8238
US Classification:
438303, 438258, 438211
Abstract:
A structure and fabrication method for a gate stack used to define source/drain regions in a semiconductor substrate. The method comprises (a) forming a gate dielectric layer on top of the substrate, (b) forming a gate polysilicon layer on top of the gate dielectric layer, (c) implanting n-type dopants in a top layer of the gate polysilicon layer, (d) etching away portions of the gate polysilicon layer and the gate dielectric layer so as to form a gate stack on the substrate, and (e) thermally oxidizing side walls of the gate stack with the presence of a nitrogen-carrying gas. As a result, a diffusion barrier layer is formed at the same depth in the polysilicon material of the gate stack regardless of the doping concentration. Therefore, the n-type doped region of the gate stack has the same width as that of the undoped region of the gate stack.
A gate stack structure. The structure includes (a) a semiconductor region and (b) a gate stack on top of the semiconductor region. The gate stack includes (i) a gate dielectric region on top of the semiconductor region, (ii) a first gate polysilicon region on top of the gate dielectric region, and (iii) a second gate polysilicon region on top of the first gate polysilicon region and doped with a type of dopants. The structure further includes (c) a diffusion barrier region and a spacer oxide region on a side wall of the gate stack. The diffusion barrier region (i) is sandwiched between the gate stack and the spacer oxide region and (ii) is in direct physical contact with both the first and second gate polysilicon regions, and (iii) comprises a material having a property of preventing a diffusion of oxygen-containing materials through the diffusion barrier region.
Los Angeles, CAMy background has always been in corporate - entertainment industry, since graduating from UCLA. I exited this industry in 2006, and since that time I utilized... My background has always been in corporate - entertainment industry, since graduating from UCLA. I exited this industry in 2006, and since that time I utilized my 'corporate tool-kit' and founded the nonprofit, What's In Your Lunch Box? (WIYLBOX). This is an organization that provides education...