Derrick S Kamber

US Patent:

8048225, Nov 1, 2011

Filed:

Sep 9, 2009

Appl. No.:

12/556562

Inventors:

Christiane Poblenz - Goleta CA, US
Mathew C. Schmidt - Goleta CA, US
Derrick S. Kamber - Goleta CA, US

Assignee:

Soraa, Inc. - Goleta CA

International Classification:

C30B 21/04

US Classification:

117104, 117 86, 117105, 117 99

Abstract:

The present invention includes a high-quality, large-area bulk GaN seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal is of ultra-low defect density, has flat surfaces free of bowing, and is free of foreign substrate material. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.

US Patent:

8465588, Jun 18, 2013

Filed:

Jul 1, 2011

Appl. No.:

13/175739

Inventors:

Christiane Poblenz - Goleta CA, US
James S. Speck - Goleta CA, US
Derrick S. Kamber - Goleta CA, US

Assignee:

SORAA, Inc. - Fremont CA

International Classification:

C30B 23/06

US Classification:

117 99, 117 86, 117100, 117104, 117105

Abstract:

A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of relatively low defect density and has flat surfaces free of bowing. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.

US Patent:

8574525, Nov 5, 2013

Filed:

Nov 4, 2009

Appl. No.:

13/128092

Inventors:

Siddha Pimputkar - Goleta CA, US
Derrick S. Kamber - Goleta CA, US
James S. Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

C01B 21/06
C01B 21/072
C01B 21/064
C30B 7/00
C30B 11/00
C30B 21/02
B01J 3/04
B01D 9/00
H01B 1/06
C09K 5/00

US Classification:

423290, 423412, 423409, 117 68, 117206, 117 71, 117224, 4222451, 25251914, 252 76

Abstract:

Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-Ill nitride into said fluid.

US Patent:

8641823, Feb 4, 2014

Filed:

Nov 4, 2009

Appl. No.:

13/128083

Inventors:

Siddha Pimputkar - Goleta CA, US
Derrick S. Kamber - Goleta CA, US
James S. Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

C30B 7/10
C30B 29/40
B01D 9/00

US Classification:

117224, 4222451, 422254, 428141, 428697, 2525214, 2525215, 2525216, 252 6255

Abstract:

Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.

US Patent:

8647967, Feb 11, 2014

Filed:

May 28, 2009

Appl. No.:

12/474143

Inventors:

Makoto Saito - Santa Barbara CA, US
Shin-Ichiro Kawabata - Santa Barbara CA, US
Derrick S. Kamber - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
James S. Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H01L 21/20

US Classification:

438478, 257E21108

Abstract:

A method of obtaining a hexagonal würtzite type epitaxial layer with a low impurity concentration of alkali-metal by using a hexagonal würtzite substrate possessing a higher impurity concentration of alkali-metal, wherein a surface of the substrate upon which the epitaxial layer is grown has a crystal plane which is different from the c-plane.

US Patent:

20080083970, Apr 10, 2008

Filed:

May 8, 2007

Appl. No.:

11/801053

Inventors:

Derrick Kamber - Goleta CA, US
Benjamin Haskell - Santa Barbara CA, US
Shuji Nakamura - Santa Barbara CA, US
Tadao Hashimoto - Goleta CA, US

International Classification:

H01L 21/36
H01L 29/20

US Classification:

257615000, 438508000, 257E29089, 257E21461

Abstract:

A method for growing III-nitride films containing aluminum using Hydride Vapor Phase Epitaxy (HVPE) is disclosed, and comprises using corrosion-resistant materials in an HVPE system, the region of the HVPE system containing the corrosion-resistant materials being an area that contacts an aluminum halide, heating a source zone with an aluminum-containing source above a predetermined temperature, and growing the III-nitride film containing aluminum within the HVPE system containing the corrosion-resistant material.

US Patent:

20100065854, Mar 18, 2010

Filed:

Nov 2, 2007

Appl. No.:

12/513326

Inventors:

Derrick S. Kamber - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
James S. Speck - Goleta CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

International Classification:

H01L 29/20
H01L 21/20

US Classification:

257 76, 438503, 257615, 257E2109, 257E29089

Abstract:

A Group III-nitride semiconductor film containing aluminum, and methods for growing this film. A film is grown by patterning a substrate, and growing the Group III-nitride semi-conductor film containing aluminum on the substrate at a temperature designed to increase the mobility of aluminum atoms to increase a lateral growth rate of the Group III-nitride semiconductor film. The film optionally includes a substrate patterned with elevated stripes separated by trench regions, wherein the stripes have a height chosen to allow the Group III-nitride semiconductor film to coalesce prior to growth from the bottom of the trenches reaching the top of the stripes, the temperature being greater than 1075 C., the Group III-nitride semiconductor film being grown using hydride vapor phase epitaxy, the stripes being oriented along a (1-100) direction of the substrate or the growing film, and a dislocation density of the grown film being less than 10cm.

US Patent:

20100111808, May 6, 2010

Filed:

Nov 4, 2009

Appl. No.:

12/612477

Inventors:

Siddha Pimputkar - Goleta CA, US
Derrick S. Kamber - Goleta CA, US
Makoto Saito - Tsukuba, JP
Steven P. DenBaars - Goleta CA, US
James S. Speck - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

International Classification:

C30B 25/00
C01B 21/06

US Classification:

423409, 117106, 117 84

Abstract:

The present invention provides a method for growing group III-nitride crystals wherein the group III-nitride crystal growth occurs on an etched seed crystal. The etched seed is fabricated prior to growth using a temperature profile which produces a high solubility of the group III-nitride material in a seed crystals zone as compared to a source materials zone. The measured X-ray diffraction of the obtained crystals have significantly narrower Full Width at Half Maximum values as compared to crystals grown without etch back of the seed crystal surfaces prior to growth.