Deying Xia

US Patent:

8377390, Feb 19, 2013

Filed:

May 29, 2009

Appl. No.:

12/475371

Inventors:

Steven R. J. Brueck - Albuquerque NM, US
Deying Xia - Newton MA, US

Assignee:

STC.UNM - Albuquerque NM

International Classification:

B01J 19/00
B32B 3/10

US Classification:

422503, 422 681, 422129, 422504, 422507, 427256, 427284, 4281951, 428206, 430296, 430322, 264293, 977773

Abstract:

In accordance with the invention, there are surfaces exhibiting anisotropic wetting, microfluidic devices and microreactors including the surfaces and methods of controlling anisotropic wetting behavior of the surfaces. The exemplary surface can include a substrate and a plurality of rectangular shaped structures arranged to form a macroscopic pattern over the substrate, wherein the plurality of rectangular shaped structures delineate a top surface of the rectangular structures from a surface of the substrate, the rectangular shaped structures including substantially vertical walls having a height of about 100 nm to about 10 μm and wherein the shape of the macroscopic pattern, the height of the substantially vertical walls, and a surface chemistry of the top surface controls anisotropic wetting at the top surface of the rectangular structures.

US Patent:

8404123, Mar 26, 2013

Filed:

Sep 28, 2010

Appl. No.:

12/892427

Inventors:

Steven R. J. Brueck - Albuquerque NM, US
Deying Xia - Albuquerque NM, US

Assignee:

STC.UNM - Albuquerque NM

International Classification:

B01D 61/00
B01D 63/00
B01D 67/00
B01D 69/00

US Classification:

210767, 21050023, 977773, 977780, 977840, 977880, 977902, 137 2, 137172, 137561 R

Abstract:

In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.

US Patent:

20070134939, Jun 14, 2007

Filed:

Oct 16, 2006

Appl. No.:

11/549732

Inventors:

Steven Brueck - Albuquerque NM, US
Deying Xia - Albuquerque NM, US

International Classification:

H01L 21/31

US Classification:

438778000

Abstract:

In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.

US Patent:

20130193065, Aug 1, 2013

Filed:

Mar 14, 2013

Appl. No.:

13/831537

Inventors:

Steven R.J. Brueck - Albuquerque NM, US
Deying Xia - Belmont MA, US
Yuliya Kuznetsova - Albuquerque NM, US
Alexander Neumann - Albuquerque NM, US

Assignee:

STC.UNM - Albuquerque NM

International Classification:

B01D 69/04
G03F 7/20

US Classification:

21050023, 430324

Abstract:

In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.

US Patent:

20210109046, Apr 15, 2021

Filed:

Dec 21, 2020

Appl. No.:

17/129686

Inventors:

- Oberkochen, DE
- Thornwood NY, US
Deying Xia - Belmont MA, US
Shawn McVey - Newton NH, US
Ulrich Mantz - Schelklingen, DE

International Classification:

G01N 23/2258
H01J 49/14
H01J 37/26
H01L 21/67

Abstract:

An inspection system serves to qualify semiconductor structures. The inspection system has an ion beam source for space-resolved exposition of the structures to be qualified with an ion beam. The inspection system also includes a secondary ion detection device with a mass spectrometer. The mass spectrometer is configured to measure an ion mass to charge ratio in a given bandwidth.