Dmytro M Apalkov

US Patent:

7518835, Apr 14, 2009

Filed:

Jul 1, 2005

Appl. No.:

11/173087

Inventors:

Yiming Huai - Pleasanton CA, US
Dmytro Apalkov - Milpitas CA, US

Assignee:

Grandis, Inc. - Milpitas CA

International Classification:

G11B 5/39

US Classification:

36032412

Abstract:

A method and system for providing a magnetic element are disclosed. The method and system include providing a magnetic biasing structure having a first pinned layer, a second pinned layer, a spacer layer, and a free layer. The first pinned layer has a first magnetization pinned in the first direction. The second pinned layer has a second magnetization in a second direction that is substantially perpendicular or along the first direction. The spacer layer is nonferromagnetic, resides between the second pinned layer and the free layer, and is configured such that the free layer is substantially free of exchange coupling with the second pinned layer. The free layer has a shape anisotropy with a longitudinal direction substantially in the second direction. The magnetic biasing structure provides a bias field for the free layer along the hard or easy axis. In one aspect, the second pinned layer resides between the first pinned layer and the free layer.

US Patent:

7800942, Sep 21, 2010

Filed:

Jun 11, 2008

Appl. No.:

12/136916

Inventors:

Eugene Chen - Fremont CA, US
Dmytro Apalkov - Milpitas CA, US

Assignee:

Grandis, Inc. - Milpitas CA
Renesas Technology Corp. - Tokyo

International Classification:

G11C 11/15

US Classification:

365173, 365171, 365158

Abstract:

A method and system for providing a magnetic element and memory utilizing the magnetic element are described. The magnetic element includes a reference layer, a nonferromagnetic spacer layer, and a free layer. The reference layer has a resettable magnetization that is set in a selected direction by a magnetic field generated externally to the reference layer. The reference layer is also magnetically thermally unstable at an operating temperature range and has KV/kT is less than fifty five. The spacer layer resides between the reference layer and the free layer. In addition, the magnetic element is configured to allow the free layer to be switched to each of a plurality of states when a write current is passed through the magnetic element.

US Patent:

8159866, Apr 17, 2012

Filed:

Oct 30, 2009

Appl. No.:

12/609764

Inventors:

Dmytro Apalkov - San Jose CA, US
Vladimir Nikitin - Campbell CA, US
David Druist - Santa Clara CA, US
Steven M. Watts - Mountain View CA, US

Assignee:

Grandis, Inc. - Milpitas CA

International Classification:

G11C 11/00
G11C 5/08
G11C 11/14
G11C 11/15

US Classification:

365158, 365 66, 365171, 365173

Abstract:

A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.

US Patent:

8248100, Aug 21, 2012

Filed:

Apr 19, 2011

Appl. No.:

13/089605

Inventors:

Dmytro Apalkov - San Jose CA, US
David Druist - Santa Clara CA, US

Assignee:

Grandis, Inc. - Milpitas CA

International Classification:

G06F 7/38
H01L 25/00

US Classification:

326 37, 326 38, 326 41, 326 47, 326101

Abstract:

A method and system for providing a logic device are described. The logic device includes a plurality of magnetic input/channel regions, at least one magnetic sensor region, and at least one sensor coupled with the at least one magnetic sensor region. Each of the magnetic input/channel regions is magnetically biased in a first direction. The magnetic sensor region(s) are magnetically biased in a second direction different from the first direction such that at least one domain wall resides in the magnetic input/channel regions if the logic device is in a quiescent state. The sensor(s) output a signal based on a magnetic state of the magnetic sensor region(s). The input/channel regions and the magnetic sensor region(s) are configured such that the domain wall(s) may move into the magnetic sensor region(s) in response to a logic signal being provided to at least a portion of the magnetic input regions.

US Patent:

8374048, Feb 12, 2013

Filed:

Aug 11, 2010

Appl. No.:

12/854628

Inventors:

Dmytro Apalkov - San Jose CA, US

Assignee:

Grandis, Inc. - San Jose CA

International Classification:

G11C 11/06

US Classification:

3652255, 365 74, 365157, 365209, 3652435, 365131

Abstract:

A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has a magnetic anisotropy, at least a portion of which is a biaxial anisotropy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

US Patent:

8378438, Feb 19, 2013

Filed:

Dec 4, 2008

Appl. No.:

12/328255

Inventors:

Dmytro Apalkov - San Jose CA, US
Yunfei Ding - Fremont CA, US

Assignee:

Grandis, Inc. - San Jose CA

International Classification:

H01L 29/82

US Classification:

257421, 257E29323, 365158, 365171, 438 3

Abstract:

A method and system for providing a magnetic element are described. The magnetic element includes pinned and free layers, a nonmagnetic spacer layer between the free and pinned layers, and a stability structure. The free layer is between the spacer layer and the stability structure. The free layer has a free layer magnetization, at least one free layer easy axis, and at least one hard axis. The stability structure includes magnetic layers and is configured to decrease a first magnetic energy corresponding to the free layer magnetization being aligned with the at least one easy axis without decreasing a second magnetic energy corresponding to the free layer magnetization being aligned with the at least one hard axis. The magnetic element is configured to allow the free layer magnetization to be switched to between states when a write current is passed through the magnetic element.

US Patent:

8399941, Mar 19, 2013

Filed:

Nov 5, 2010

Appl. No.:

12/940926

Inventors:

Dmytro Apalkov - San Jose CA, US
Mohamad Towfik Krounbi - San Jose CA, US

Assignee:

Grandis, Inc. - San Jose CA

International Classification:

H01L 29/82

US Classification:

257421, 257295, 257E27008, 257E29164, 257E29167, 257E29272

Abstract:

A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has an easy cone magnetic anisotropy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

US Patent:

8406045, Mar 26, 2013

Filed:

Jan 19, 2011

Appl. No.:

13/009818

Inventors:

Eugene Youjun Chen - Fremont CA, US
Dmytro Apalkov - San Jose CA, US

Assignee:

Grandis Inc. - Milpitas CA

International Classification:

G11C 11/16

US Classification:

365173, 365158, 365171

Abstract:

Techniques and magnetic devices associated with a magnetic element are described that includes a presetting fixed layer having a presetting fixed layer magnetization, a free layer having a changeable free layer magnetization, and a fixed layer having a fixed layer magnetization, where a presetting current pulse applied between the presetting fixed layer and free layer operates to preset the free layer magnetization in advance of a write pulse. Techniques and magnetic devices associated with a magnetic element are described that includes a first terminal, a first magnetic tunnel junction, a second terminal, a second magnetic tunnel junction, and a third terminal, where a current pulse applied between the first and second terminal operate to switch the state of the first magnetic tunnel junction and a current applied between the second and third terminal operate to switch the state of the second magnetic tunnel junction.