Donald L Larson

US Patent:

53022378, Apr 12, 1994

Filed:

Feb 13, 1992

Appl. No.:

7/835293

Inventors:

Donald R. Larson - Arvada CO
David L. Veasey - Boulder CO

Assignee:

The United States of America as represented by the Secretary of Commerce - Washington DC

International Classification:

H01L 2100

US Classification:

156643

Abstract:

An apparatus and method for down-stream plasma processing (both etching and plasma enhanced deposition) are disclosed wherein only a portion of the surface area of a substrate is exposed to the low pressure, reactive gaseous processing environment. The remainder of the substrate remains outside a small enclosed processing area, thus leaving these areas unexposed to the processing agents and providing physical access for monitoring equipment or the like, for example when in-situ monitoring during processing is desired. Etch rates of up to 6. mu. m/h have been obtained.