Donald Lamar Roberson

US Patent:

39545229, May 4, 1976

Filed:

Jun 28, 1973

Appl. No.:

5/374719

Inventors:

Donald K. Roberson - Scottsdale AZ

Assignee:

Motorola, Inc. - Chicago IL

International Classification:

H01L 2176
H01L 2904

US Classification:

148175

Abstract:

In the manufacture of semiconductor components, more radiation tolerant semiconductors are accomplished by growing a uniform epitaxial collector region on a dielectrically isolated substrate having islands of high conductivity semiconductor material.

US Patent:

39560333, May 11, 1976

Filed:

Dec 4, 1974

Appl. No.:

5/529421

Inventors:

Donald K. Roberson - Scottsdale AZ

Assignee:

Motorola, Inc. - Chicago IL

International Classification:

H01L 2176
H01L 2704

US Classification:

148175

Abstract:

This disclosure is directed to an improved integrated semiconductor transistor device which has the feature of a heavily doped epitaxial semiconductor region in contact with a buried sub-collector region. Additional features include dielectric sidewall isolation combined with PN junction isolation between the substrate and the collector portion of the transistor. The epitaxial contact to the buried sub-collector region is formed simultaneous with the formation of polycrystalline silicon filler material that fills in the dielectric isolation moat or channel located around the sides of individual electrically isolated transistor devices in order to achieve a planar surface structure. Another feature of the transistor device is the use of a base region that extends completely across and in contact with the sidewalls of the dielectric isolation moat. Preferably, the emitter region also extends across and in contact with three of the four of the sidewalls of the dielectric isolation moat. In this manner, transistor devices can be made very small with external electrical metal contacts made to the emitter region, the base region, and to the heavily doped epitaxial semiconductor region that is in contact with the buried sub-collector region.