Donald R Samuels

US Patent:

7465615, Dec 16, 2008

Filed:

Nov 6, 2007

Appl. No.:

11/935714

Inventors:

Shahid A. Butt - Ossining NY, US
Allen H. Gabor - Katonah NY, US
Donald J. Samuels - Silverthorne CO, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H04L 21/00

US Classification:

438157, 438592, 257E21039

Abstract:

Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.

US Patent:

7727825, Jun 1, 2010

Filed:

Jul 23, 2008

Appl. No.:

12/178072

Inventors:

Shahid A. Butt - Ossining NY, US
Allen H. Gabor - Katonah NY, US
Donald J. Samuels - Silverthorne CO, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/00

US Classification:

438157, 438592, 430 5, 257E21039

Abstract:

Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.

US Patent:

20020138810, Sep 26, 2002

Filed:

Jan 31, 2001

Appl. No.:

09/774742

Inventors:

Mark Lavin - Katonah NY, US
Donald Samuels - Silverthorne CO, US
Lars Liebmann - Poughquag NY, US
Henning Haffner - Dresden, DE

International Classification:

G06F017/50

US Classification:

716/001000

Abstract:

There is provided a method for Optical Proximity Correction (OPC) of a semiconductor device. The method includes the step of pre-sorting the shapes and/or the shape edges into groups based on pre-defined criteria. Different regions of interest are applied to at least some of the shapes and the shape edges, based on which of the groups the at least some of the shapes and the shape edges are pre-sorted into. The pre-defined criteria may include: properties or labels associated with the shapes and/or the shape edges during a design process of the semiconductor device; geometric properties of the shapes and/or the shape edges; structural properties of an overall design of the semiconductor device; and the shapes and/or the shape edges for which a larger region of interest is required.

US Patent:

59372257, Aug 10, 1999

Filed:

Jul 21, 1997

Appl. No.:

8/897963

Inventors:

Donald J. Samuels - Yorktown NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03G 1508

US Classification:

399 27

Abstract:

A printer specific stream of bits is received, before or while the printing of a print job, and translated into a pixel count specific to the print job and indicative of the anticipated toner usage for the print job. This pixel count then is added to a global pixel count indicative of toner usage of jobs printed since a global pixel counter was reset.

US Patent:

6268907, Jul 31, 2001

Filed:

May 13, 1998

Appl. No.:

9/078288

Inventors:

Donald J. Samuels - Yorktown Heights NY
Alan C. Thomas - Hughsonville NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03B 2754

US Classification:

355 71

Abstract:

The present invention provides a method and an optical lithographic system which eliminates the standing wave effect typically observed in photoresists without the need for altering the thickness of the photoresist, utilizing an anti-reflective coating material, or changing the light source. Specifically, the present invention compensates for standing waves by exposing the photoresist with light from a light source at different phases. That is, in the present invention there is a change in light exposure from a single dose at one phase to a plurality of doses at different phases; therefore dispersing the effects of the standing wave at each of those phases which in turn eliminates the standing wave.

US Patent:

53044410, Apr 19, 1994

Filed:

Dec 31, 1992

Appl. No.:

7/999439

Inventors:

Donald J. Samuels - Yorktown Heights NY
Roger J. Yerdon - Pleasant Valley NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 702
G03F 720

US Classification:

430 30

Abstract:

A method of adjusting exposure of an energy beam to a lithographic resist sensitive to the energy beam, which method comprises determining where in a pattern to be exposed the energy level will exceed a critical thermal level, and adjusting the pattern and kind of exposure of the resist where the critical level is exceeded. One technique is to adjust the level exposure of the resist to a lower level equal to or less than the critical level with repeated exposures of the pattern in areas where the critical level is exceeded. The energy level monitored can be a thermal level measured as a temperature of the resist. A second technique is to adjust the exposure level by modifying the pattern and duration of exposure of the resist to a longer duration providing exposures equal to or less than the critical level with the modified pattern of exposures of the pattern in areas where the critical level is exceeded.

US Patent:

58620583, Jan 19, 1999

Filed:

May 16, 1996

Appl. No.:

8/648745

Inventors:

Donald James Samuels - Yorktown Heights NY
Matthew R. Wordeman - Mahopac NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 1750
G06K 903

US Classification:

364491

Abstract:

An optical proximity correction method and system are disclosed that allows for the correction of line width deviations caused by nonlinear lithography tools by calculating required chrome on glass line widths for a desired printed line. Line width correction is determined based only on the pitch of the line, defined as the width of the line and the distance to an adjacent line. Correction information is calculated from an aerial simulation and is then organized by pitch to provide a more efficient means of line correction.