Donovan T Lee

age ~46

from San Jose, CA

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Also known as:

Donovan Tan Lee
Donovan Kim Lee
Donovan Living Lee
Donovan C Lee
Donovan Lee Living
Tan Lee Donovan
Donovan Tan
Lee Donovan

Phone and address:: 3151 Corby Dr, San Jose, CA 95148
4082705914

Connected to:

Donovan Lee Phones & Addresses

3151 Corby Dr, San Jose, CA 95148 • 4082705914
Walnut Creek, CA
Daly City, CA
Berkeley, CA

Work

Company:

Emanuel home for the aged and clinic
May 2014
Position:

Electrical contractor

Education

School / High School:

National Tools and Engineering Institute
2011

Resumes

Donovan Lee Saint Catherine, MS

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Work:

Emanuel Home for the Aged and Clinic

May 2014 to Jul 2014
Electrical Contractor Cocoa Industry Board

Jun 2010 to Aug 2013
Electrical Contractor Water Management International

Mar 2013 to May 2013
July 20214 Sub- Contractor Herman Charles

Sep 2004 to May 2009
Electrician

Amazon

Colloquial Swahili: The Complete Course for Beginners (Colloquial Series)

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COLLOQUIAL SWAHILI is easy to use and completely up to date! Specially written by experienced teachers for self-study or class use, the course offers you a step-by-step approach to written and spoken Swahili. No prior knowledge of the language is required. What makes this new edition of COLLOQUIAL...

Author
Lutz Marten, Donovan Lee Mcgrath

Binding
Audio CD

Pages
352

Publisher
Routledge

ISBN #
0415580706

EAN Code
9780415580700

ISBN #
12

Won't You Come and Play with Me?

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A list of errands in hand, a little boy sets out to town with good intentions, but how can he pass by a game of catch without joining in? And how can he resist the sweet smells coming from the bakery or the breezes beckoning in the harbor? Inspired by an old children's street rhyme, this simple stor...

Author
Mary Lee Donovan

Binding
Hardcover

Pages
32

Publisher
HMH Books for Young Readers

ISBN #
0395846307

EAN Code
9780395846308

ISBN #
5

Colloquial Swahili: The Complete Course for Beginners (Colloquial Series)

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Colloquial Swahili is easy to use and completely up to date! Specially written by experienced teachers for self-study or class use, the course offers you a step-by-step approach to written and spoken Swahili. No prior knowledge of the language is required. What makes Colloquial Swahili your best c...

Author
Lutz Marten, Donovan Lee Mcgrath

Binding
Paperback

Pages
312

Publisher
Routledge

ISBN #
0415221617

EAN Code
9780415221610

ISBN #
4

Papa's Bedtime Story

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This is a heart-warming bedtime stories for children, full of animals and beautiful pictures.

Author
mary lee donovan

Binding
Paperback

Publisher
trumpet club

ISBN #
0440832659

EAN Code
9780440832652

ISBN #
7

Colloquial Swahili: The Complete Course for Beginners (Colloquial Series)

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Colloquial Swahili is the ideal introduction to the major language of East Africa. Written by experienced teachers, the course provides a step-by-step approach to Swahili. No previous knowledge of the language is required.Features include:*pronunciation guide*lively dialogues*concise grammar explana...

Author
Lutz Marten, Donovan Lee McGrath

Binding
Paperback

Pages
312

Publisher
Routledge

ISBN #
0415221633

EAN Code
9780415221634

ISBN #
8

Colloquial Swahili: The Complete Course for Beginners (Colloquial Series)

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Author
Lutz Marten, Donovan Lee Mcgrath

Binding
Paperback

Pages
352

Publisher
Routledge

ISBN #
0415575443

EAN Code
9780415575447

ISBN #
2

Isbn (Books And Publications)

Getting Past Almost: A Novel

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Author
Donovan Lee

ISBN #
0595205119

Getting Past Almost

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Author
Donovan Lee

ISBN #
0595259065

Getting Past Almost

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Author
Donovan Lee

ISBN #
0595654231

Name / Title

Company / Classification

Phones & Addresses

Donovan C. Lee
President

48th and O Productions, Inc

2328 Rivera St, San Francisco, CA 94116

Donovan Lee

Pacific Rim Motors, LLC
Used Auto Sales

3333 Vincent Rd, Concord, CA 94523

Us Patents

Interferometric Modulator Display Devices
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US Patent:

20090073534, Mar 19, 2009
Filed:

Jan 9, 2008
Appl. No.:

11/971830
Inventors:

Donovan Lee - Daly City CA, US
Kasra Khazeni - San Jose CA, US
International Classification:

G02F 1/01
US Classification:

359238
Abstract:

An embodiment for a pixel for a display device on a substrate is disclosed. The pixel includes a first interferometric modulator on the substrate. The first interferometric modulator has a first normal direction substantially perpendicular to the first interferometric modulator and a first angularly-dependent reflectivity function comprising a first reflectivity in a first direction and a second reflectivity in a second direction, with the first reflectivity being greater than the second reflectivity. The pixel also includes a second interferometric modulator on the substrate. The second interferometric modulator has a second normal direction substantially perpendicular to the second interferometric modulator and a second angularly-dependent reflectivity function comprising a third reflectivity in the second direction and a fourth reflectivity in the first direction, with the third reflectivity being greater than the fourth reflectivity.

Vertical Floating Gate Nand With Offset Dual Control Gates
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US Patent:

20150318295, Nov 5, 2015
Filed:

Apr 30, 2014
Appl. No.:

14/265733
Inventors:

- Plano TX, US
Vinod Purayath - Santa Clara CA, US
Donovan Lee - Santa Clara CA, US
Akira Matsudaira - San Jose CA, US
Assignee:

SanDisk Technologies, Inc. - Plano TX
International Classification:

H01L 27/115
H01L 21/285
H01L 21/28
H01L 21/02
H01L 29/423
H01L 29/788
Abstract:

A method of making a monolithic three dimensional NAND string includes providing a stack of alternating insulating layers and control gate films over a major surface of a substrate. Each of the control gate films includes a middle layer located between a first control gate layer and a second control gate layer, the middle layer being a different material from the first and second control gate layers and from the insulating layers. The method also includes forming a front side opening in the stack, and forming a blocking dielectric, at least one charge storage region, a tunnel dielectric and a semiconductor channel in the front side opening in the stack.

Trench Vertical Nand And Method Of Making Thereof
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US Patent:

20150318298, Nov 5, 2015
Filed:

Apr 30, 2014
Appl. No.:

14/265815
Inventors:

- Plano TX, US
James Kai - Fremont CA, US
Yuan Zhang - San Jose CA, US
Vinod Purayath - Santa Clara CA, US
Donovan Lee - Santa Clara CA, US
Assignee:

SanDisk Technologies, Inc. - Plano TX
International Classification:

H01L 27/115
H01L 21/311
H01L 21/3213
H01L 21/28
Abstract:

A method of making a monolithic three dimensional NAND string includes providing a stack of alternating first material layers and second material layers different from the first material layer over a substrate, etching the stack to form at least one trench in the stack, forming a blocking dielectric over a side wall of the at least one trench, forming a charge storage layer over the blocking dielectric in the at least one trench, forming a tunnel dielectric over the charge storage layer in the at least one trench and forming a semiconductor channel over the tunnel dielectric in the at least one trench.

In-Situ Support Structure For Line Collapse Robustness In Memory Arrays
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US Patent:

20150287733, Oct 8, 2015
Filed:

Apr 7, 2014
Appl. No.:

14/246656
Inventors:

- Plano TX, US
Donovan Lee - Santa Clara CA, US
Assignee:

SANDISK TECHNOLOGIES INC. - Plano TX
International Classification:

H01L 27/115
H01L 21/02
H01L 21/311
H01L 21/3213
H01L 21/28
H01L 29/788
Abstract:

Methods for preventing line collapse during the fabrication of NAND flash memory and other microelectronic devices that utilize closely spaced device structures with high aspect ratios are described. In some embodiments, one or more mechanical support structures may be used to provide lateral support between closely spaced device structures to prevent collapsing of the closely spaced device structures during an etching process (e.g., during a word line etch). In one example, during fabrication of a NAND flash memory, one or more mechanical support structures may be in place prior to performing a high aspect ratio word line etch or may be formed during the word line etch. In some cases, the one or more mechanical support structures may comprise portions of an inter-poly dielectric (IPD) layer that were in place prior to performing the word line etch.

Three Dimensional Nand Device With Silicide Containing Floating Gates And Method Of Making Thereof
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US Patent:

20150072488, Mar 12, 2015
Filed:

Nov 12, 2014
Appl. No.:

14/539811
Inventors:

- PLANO TX, US
Johann Alsmeier - San Jose CA, US
George Samachisa - San Jose CA, US
Henry Chin - Palo Alto CA, US
George Matamis - Danville CA, US
Yuan Zhang - San Jose CA, US
James Kai - Santa Clara CA, US
Vinod Purayath - Santa Clara CA, US
Donovan Lee - Santa Clara CA, US
International Classification:

H01L 27/115
H01L 21/28
H01L 21/3205
H01L 29/49
US Classification:

438264
Abstract:

A method of making a monolithic three dimensional NAND string, including providing a stack of alternating first material layers and second material layers different from the first material layer over a substrate, the stack comprising at least one opening containing a charge storage material comprising a silicide layer, a tunnel dielectric on the charge storage material in the at least one opening, and a semiconductor channel on the tunnel dielectric in the at least one opening, selectively removing the second material layers without removing the first material layers from the stack and forming control gates between the first material layers.

Three Dimensional Nand Device With Birds Beak Containing Floating Gates And Method Of Making Thereof
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US Patent:

20150008502, Jan 8, 2015
Filed:

May 20, 2014
Appl. No.:

14/282567
Inventors:

- Plano TX, US
Donovan Lee - Santa Clara CA, US
Vinod R. Purayath - Santa Clara CA, US
Yuan Zhang - San Jose CA, US
James K. Kai - Santa Clara CA, US
George Matamis - San Jose CA, US
Assignee:

SANDISK TECHNOLOGIES INC. - Plano TX
International Classification:

H01L 27/115
US Classification:

257321, 438264
Abstract:

A method of making a monolithic three dimensional NAND string including forming a stack of alternating layers of a first material and a second material over a substrate. The first material comprises an electrically insulating material and the second material comprises a semiconductor or conductor material. The method also includes etching the stack to form a front side opening in the stack, forming a blocking dielectric layer over the stack of alternating layers of a first material and a second material exposed in the front side opening, forming a semiconductor or metal charge storage layer over the blocking dielectric, forming a tunnel dielectric layer over the charge storage layer, forming a semiconductor channel layer over the tunnel dielectric layer, etching the stack to form a back side opening in the stack, removing at least a portion of the first material layers and portions of the blocking dielectric layer.

Three Dimensional Nand Device With Birds Beak Containing Floating Gates And Method Of Making Thereof
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US Patent:

20150008505, Jan 8, 2015
Filed:

Feb 18, 2014
Appl. No.:

14/183152
Inventors:

- Plano TX, US
Donovan Lee - Santa Clara CA, US
Vinod R. Purayath - Santa Clara CA, US
Yuan Zhang - San Jose CA, US
James K. Kai - Santa Clara CA, US
George Matamis - San Jose CA, US
Assignee:

SANDISK TECHNOLOGIES INC. - Plano TX
International Classification:

H01L 27/115
US Classification:

257324, 438268
Abstract:

A method of making a monolithic three dimensional NAND string including forming a stack of alternating layers of a first material and a second material over a substrate. The first material comprises an electrically insulating material and the second material comprises a semiconductor or conductor material. The method also includes etching the stack to form a front side opening in the stack, forming a blocking dielectric layer over the stack of alternating layers of a first material and a second material exposed in the front side opening, forming a semiconductor or metal charge storage layer over the blocking dielectric, forming a tunnel dielectric layer over the charge storage layer, forming a semiconductor channel layer over the tunnel dielectric layer, etching the stack to form a back side opening in the stack, removing at least a portion of the first material layers and portions of the blocking dielectric layer.

Inverted-T Word Line And Formation For Non-Volatile Storage
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US Patent:

20140346583, Nov 27, 2014
Filed:

Nov 5, 2013
Appl. No.:

14/072222
Inventors:

- Plano TX, US
James Kai - Santa Clara CA, US
Donovan Lee - Santa Clara CA, US
Yuan Zhang - San Jose CA, US
Akira Matsudaira - Milpitas CA, US
Assignee:

SANDISK TECHNOLOGIES INC. - Plano TX
International Classification:

H01L 27/115
US Classification:

257316, 438586
Abstract:

A non-volatile memory system, comprising non-volatile storage device with word lines having an inverted T-shape over floating gates. The inverted T-shape shape has a wider bottom portion and a thinner top portion. The thinner top portion increases the separation between adjacent word lines relative to the separation between the wider bottom portions. An air gap may separate adjacent word lines. The thinner top portion of the word lines increases the path length between adjacent word lines. The likelihood of word line to word line short may be decreased by reducing the electric field between adjacent word lines.