Douglas W Mercer

age ~62

from Austin, TX

Also known as:
  • Douglas William Mercer
  • Doug M Mercer
  • Doug W Mercer
Phone and address:
581 Manchester Ln, Austin, TX 78737
5123013661

Douglas Mercer Phones & Addresses

  • 581 Manchester Ln, Austin, TX 78737 • 5123013661
  • 6910 Holly Hills Ln, Sachse, TX 75048 • 9724293829
  • Sherman Oaks, CA
  • Houston, TX
  • Hays, TX

Resumes

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Douglas Mercer

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Name / Title
Company / Classification
Phones & Addresses
Douglas Derek Mercer
Director, President
TOWN & COUNTRY PRINTING, INC
Comm Prtg Litho
1171 Brittmoore Rd, Houston, TX 77043
8436 Winningham, Houston, TX 77065
7139736666
Douglas J. Mercer
PICTUREALITY, LLC
Douglas D. Mercer
SELECT TRANSPORT, INC
Douglas Mercer
President
DOUG'S FRIENDLY SHELL STATION, INC
13641 Foothill Blvd, Sylmar, CA 91342

Us Patents

  • Memory Cell With Transistors Having Relatively High Threshold Voltages In Response To Selective Gate Doping

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  • US Patent:
    6773972, Aug 10, 2004
  • Filed:
    Dec 13, 2001
  • Appl. No.:
    10/023113
  • Inventors:
    Andrew Marshall - Dallas TX
    Youngmin Kim - Allen TX
    David B Scott - Plano TX
    Douglas E. Mercer - Richardson TX
  • Assignee:
    Texas Instruments Incorporated - Dallas TX
  • International Classification:
    H01L 21338
  • US Classification:
    438176, 438181, 438184, 438217, 438231, 438276, 257204, 257288, 257341, 257371
  • Abstract:
    A method of forming a semiconductor circuit ( ). The method forms a first transistor (NT ) using various steps, such as by forming a first source/drain region ( ) as a first doped region in a fixed relationship to a semiconductor substrate ( ) and forming a second source/drain region ( ) as a second doped region in a fixed relationship to the semiconductor substrate. The second doped region and the first doped region are of a same conductivity type. Additionally, the first transistor is formed by forming a first gate ( ) in a fixed relationship to the first source/drain region and the second drain region. The method also forms a second transistor (ST ) using various steps, such as by forming a third source/drain region ( ) as a third doped region in a fixed relationship to the semiconductor substrate and forming a fourth source/drain region ( ) as a fourth doped region in a fixed relationship to the semiconductor substrate. The fourth doped region and the third doped region are of the same conductivity type as the first and second doped regions. Additionally, the second transistor is formed by forming a second gate ( ) in a fixed relationship to the third source/drain region and the fourth drain region.
  • Method For Integrating High-K Dielectrics In Transistor Devices

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  • US Patent:
    7045431, May 16, 2006
  • Filed:
    Dec 17, 2003
  • Appl. No.:
    10/738958
  • Inventors:
    Antonio L. P. Rotondaro - Dallas TX, US
    Douglas E. Mercer - Richardson TX, US
    Luigi Colombo - Dallas TX, US
    Mark Robert Visokay - Richardson TX, US
    Haowen Bu - Plano TX, US
    Malcolm John Bevan - Dallas TX, US
  • Assignee:
    Texas Instruments Incorporated - Dallas TX
  • International Classification:
    H01L 21/336
  • US Classification:
    438287, 438303
  • Abstract:
    Methods are disclosed that fabricating semiconductor devices with high-k dielectric layers. The invention removes portions of deposited high-k dielectric layers not below gates and covers exposed portions (e. g. , sidewalls) of high-k dielectric layers during fabrication with an encapsulation layer, which mitigates defects in the high-k dielectric layers and contamination of process tools. The encapsulation layer can also be employed as an etch stop layer and, at least partially, in comprising sidewall spacers. As a result, a semiconductor device can be fabricated with a substantially uniform equivalent oxide thickness.
  • Metal-Halogen Physical Vapor Deposition For Semiconductor Device Defect Reduction

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  • US Patent:
    7208398, Apr 24, 2007
  • Filed:
    Jul 30, 2004
  • Appl. No.:
    10/903805
  • Inventors:
    Peijun J. Chen - Dallas TX, US
    Duofeng Yue - Plano TX, US
    Douglas E. Mercer - Richardson TX, US
    Noel Russell - Plano TX, US
  • Assignee:
    Texas Instruments Incorporated - Dallas TX
  • International Classification:
    H01L 21/28
  • US Classification:
    438581, 438583, 257E21199
  • Abstract:
    The present invention provides a method of manufacturing a metal silicide electrode () for a semiconductor device (). The method comprises depositing by physical vapor deposition, halogen atoms () and transition metal atoms () to form a halogen-containing metal layer () on a semiconductor substrate (). The halogen-containing metal layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit () comprising the metal silicide electrode.
  • Metal-Germanium Physical Vapor Deposition For Semiconductor Device Defect Reduction

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  • US Patent:
    7435672, Oct 14, 2008
  • Filed:
    Jul 30, 2004
  • Appl. No.:
    10/903716
  • Inventors:
    Doufeng Yue - Plano TX, US
    Noel Russell - Plano TX, US
    Peijun J. Chen - Dallas TX, US
    Douglas E. Mercer - Richardson TX, US
  • Assignee:
    Texas Instruments Incorporated - Dallas TX
  • International Classification:
    H01L 21/3205
  • US Classification:
    438592, 438652
  • Abstract:
    The present invention provides a method of manufacturing a metal silicide electrode () for a semiconductor device (). The method comprises depositing by physical vapor deposition, germanium atoms () and transition metal atoms () to form a metal-germanium alloy layer () on a semiconductor substrate (). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit ().
  • Gate Dielectric And Method

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  • US Patent:
    7449385, Nov 11, 2008
  • Filed:
    Jul 26, 2002
  • Appl. No.:
    10/205814
  • Inventors:
    Antonio L. P. Rotondaro - Dallas TX, US
    Luigi Colombo - Dallas TX, US
    Douglas E. Mercer - Richardson TX, US
  • Assignee:
    Texas Instruments Incorporated - Dallas TX
  • International Classification:
    H01L 21/336
    H01L 21/3205
    H01L 21/31
  • US Classification:
    438287, 438591, 438761, 438762, 438778
  • Abstract:
    CMOS gate dielectric made of high-k metal silicates by reaction of metal with silicon dioxide at the silicon surface. Optionally, a silicon dioxide monolayer may be preserved at the interface.
  • Gate Structure And Method

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  • US Patent:
    7535066, May 19, 2009
  • Filed:
    Jan 23, 2003
  • Appl. No.:
    10/349686
  • Inventors:
    Antonio L. P. Rotondaro - Dallas TX, US
    Luigi Colombo - Dallas TX, US
    Mark R. Visokay - Richardson TX, US
    Rajesh Khamankar - Coppell TX, US
    Douglas E. Mercer - Richardson TX, US
  • Assignee:
    Texas Instruments Incorporated - Dallas TX
  • International Classification:
    H01L 29/76
    H01L 29/94
  • US Classification:
    257410, 257411
  • Abstract:
    A MOSFET structure including silicate gate dielectrics with nitridation treatments of the gate dielectric prior to gate material deposition.
  • Metal-Germanium Physical Vapor Deposition For Semiconductor Device Defect Reduction

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  • US Patent:
    7803703, Sep 28, 2010
  • Filed:
    Aug 4, 2008
  • Appl. No.:
    12/185189
  • Inventors:
    Doufeng Yue - Plano TX, US
    Noel Russell - Plano TX, US
    Peijun J. Chen - Dallas TX, US
    Douglas E. Mercer - Richardson TX, US
  • Assignee:
    Texas Instruments Incorporated - Dallas TX
  • International Classification:
    H01L 21/3205
  • US Classification:
    438592, 438655, 257E21165
  • Abstract:
    The present invention provides a method of manufacturing a metal silicide electrode () for a semiconductor device (). The method comprises depositing by physical vapor deposition, germanium atoms () and transition metal atoms () to form a metal-germanium alloy layer () on a semiconductor substrate (). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit ().
  • Gate Structure And Method

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  • US Patent:
    8021990, Sep 20, 2011
  • Filed:
    Apr 9, 2009
  • Appl. No.:
    12/421036
  • Inventors:
    Antonio L. P. Rotondaro - Dallas TX, US
    Luigi Colombo - Dallas TX, US
    Mark R Visokay - Richardson TX, US
    Rajesh Khamankar - Coppell TX, US
    Douglas E Mercer - Richardson TX, US
  • Assignee:
    Texas Instruments Incorporated - Dallas TX
  • International Classification:
    H01L 21/31
    H01L 21/469
  • US Classification:
    438778, 257E21191, 257E21637, 257E21639, 438216, 438585, 438591, 438783, 438785
  • Abstract:
    A MOSFET structure including silicate gate dielectrics with nitridation treatments of the gate dielectric prior to gate material deposition.

Googleplus

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Facebook

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Douglas K Mercer

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Ian Douglas Mercer Chryst...

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Classmates

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Douglas Mercer

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Schools:
West Jefferson High School West Jefferson OH 1984-1988
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Douglas Mercer

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Schools:
Grand Ridge High School Grand Ridge FL 1977-1989
Community:
Mikki Edenfield, Jerry Winters, Michelle Antone, Helen Gilley
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Douglas Mercer

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Schools:
DeLand Junior High School De Land FL 1982-1986
Community:
Peggy Armstrong, Robert Dumbaugh, Ray Ross, John Walker
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Douglas Mercer

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Schools:
Riverview Alternative School Ottawa Morocco 1956-1962, Vincent Massey Public School Ottawa Morocco 1962-1964
Community:
Angelo Sgabellone, Sam Labarbera, Bill Nash, Laura Robertson, Jean Hutchingame
Douglas Mercer Photo 20

Douglas Mercer

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Schools:
Nicolas Gatineau High School Gatineau Kuwait 1983-1987
Community:
Susy Thibault, Sylvie Mongeon, Terry Horton, Judith Charette, Sylvie Chenier

Myspace

Douglas Mercer Photo 21

Douglas Mercer

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Locality:
Mammoth/ Wilmington, NC.
Gender:
Male
Birthday:
1934
Douglas Mercer Photo 22

Douglas Mercer

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Locality:
New South Wales, Australia
Gender:
Male
Birthday:
1940
Douglas Mercer Photo 23

Douglas Mercer

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Locality:
ALKREN
Gender:
Male
Birthday:
1953
Douglas Mercer Photo 24

Douglas Mercer

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Gender:
Male
Birthday:
1947

Youtube

Who is Roy D. Mercer?

Brent Douglas and Phil Stone were radio partners for nearly 27 years a...

  • Duration:
    58s

Douglas Mercer - appearance

Name Look - Douglas Mercer - appearance. In this video we present "Dou...

  • Duration:
    2m 2s

Roy D Mercer

An interview with my dad in the fall of 2008 about a practical joke pl...

  • Duration:
    1m 53s

Septic Tank

Provided to YouTube by Universal Music Group Septic Tank Roy D. Merce...

  • Duration:
    4m 28s

Roy D. Mercer Falls out of chair

Falling on GMO during morning live news!!!!!!!!

  • Duration:
    1m 13s

Mercer Medley on Mike 2 (1/16/68)

The alternate medley of Johnny Mercer songs from the Mike Douglas Show...

  • Duration:
    3m 18s

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