Douglas D Mercer

US Patent:

7435672, Oct 14, 2008

Filed:

Jul 30, 2004

Appl. No.:

10/903716

Inventors:

Doufeng Yue - Plano TX, US
Noel Russell - Plano TX, US
Peijun J. Chen - Dallas TX, US
Douglas E. Mercer - Richardson TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/3205

US Classification:

438592, 438652

Abstract:

The present invention provides a method of manufacturing a metal silicide electrode () for a semiconductor device (). The method comprises depositing by physical vapor deposition, germanium atoms () and transition metal atoms () to form a metal-germanium alloy layer () on a semiconductor substrate (). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit ().

US Patent:

7803703, Sep 28, 2010

Filed:

Aug 4, 2008

Appl. No.:

12/185189

Inventors:

Doufeng Yue - Plano TX, US
Noel Russell - Plano TX, US
Peijun J. Chen - Dallas TX, US
Douglas E. Mercer - Richardson TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/3205

US Classification:

438592, 438655, 257E21165

Abstract:

The present invention provides a method of manufacturing a metal silicide electrode () for a semiconductor device (). The method comprises depositing by physical vapor deposition, germanium atoms () and transition metal atoms () to form a metal-germanium alloy layer () on a semiconductor substrate (). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit ().

US Patent:

20020098712, Jul 25, 2002

Filed:

Oct 18, 2001

Appl. No.:

09/982657

Inventors:

Jaideep Mavoori - Richardson TX, US
Douglas Grider - McKinney TX, US
Sunil Hattangady - McKinney TX, US
Douglas Mercer - Richardson TX, US

International Classification:

H01L021/31

US Classification:

438/771000, 438/758000

Abstract:

Oxides of multiple thicknesses are made by selectively heating the wafer with a laser beam at the locations where enhanced oxide growth is desired.

US Patent:

62041983, Mar 20, 2001

Filed:

Nov 22, 1999

Appl. No.:

9/447174

Inventors:

Aditi D. Banerjee - Plano TX
Douglas E. Mercer - Richardson TX
Rick L. Wise - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2131
H01L 21469
H01L 21336

US Classification:

438766

Abstract:

An embodiment of the instant invention is a method of fabricating an electronic device over a semiconductor substrate, the method comprising the steps of: forming a doped polycrystalline silicon layer insulatively disposed over the semiconductor substrate; and subjecting the doped polycrystalline silicon layer to a temperature of around 700 to 1100 C. in an oxidizing ambient for a period of around 5 to 120 seconds. Preferably, the oxidizing ambient is comprised of: O. sub. 2,O. sub. 3, NO, N. sub. 2 O, H. sub. 2 O, and any combination thereof. The temperature is, preferably, around 950 to 1050 C. (more preferably around 1000 C. ). The step of subjecting the doped polycrystalline silicon layer to a temperature of around 700 to 1100 C. in an oxidizing ambient for a period of around 5 to 120 seconds, preferably, forms an oxide layer on the polycrystalline silicon layer, which has a thickness which is, preferably, greater than the thickness of a native oxide layer. More preferably, it has a thickness which is greater than 3 nm (more preferably greater than 2 nm).