Douglas C Yoder

US Patent:

49757598, Dec 4, 1990

Filed:

Mar 6, 1989

Appl. No.:

7/318887

Inventors:

Diane W. Sidner - Noblesville IN
Douglas J. Yoder - Sharpsville IN
David E. Moss - Kokomo IN

Assignee:

Delco Electronics Corporation - Kokomo IN

International Classification:

H01L 2712

US Classification:

357 49

Abstract:

A moat having a flat bottom and tapered side walls is formed in a monocrystalline silicon body (substrate) and extends from a top surface of the substrate into the substrate. An oxide layer is grown over side walls and a bottom of the moat and then is selectively removed from the bottom of the moat to expose silicon. An epitaxial stalk (a recessed mesa) is grown on the silicon at the bottom of the moat to a height which makes its top at least coplanar with the top surface of the substrate.

US Patent:

50343424, Jul 23, 1991

Filed:

Jun 29, 1990

Appl. No.:

7/546289

Inventors:

Diane W. Sidner - Noblesville IN
Douglas J. Yoder - Sharpsville IN
David E. Moss - Kokomo IN

Assignee:

Delco Electronics Corporation - Kokomo IN

International Classification:

H01L 21302
H01L 21306

US Classification:

437 67

Abstract:

A moat having a flat bottom and tapered side walls is formed in a monocrystalline silicon body (substrate) and extends from a top surface of the substrate into the substrate. An oxide layer is grown over side walls and a bottom of the moat and then is selectively removed from the bottom of the moat to expose silicon. An epitaxial stalk (a recessed mesa) is grown on the silicon at the bottom of the moat to a height which makes its top at least coplanar with the top surface of the substrate.

US Patent:

49931431, Feb 19, 1991

Filed:

Mar 27, 1990

Appl. No.:

7/488349

Inventors:

Diane W. Sidner - Noblesville IN
Douglas J. Yoder - Sharpsville IN
David E. Moss - Kokomo IN

Assignee:

Delco Electronics Corporation - Kokomo IN

International Classification:

G01L 708
G01L 906

US Classification:

296211

Abstract:

A pressure sensor uses a monocrystalline silicon chip that has a diaphragm portion in which strain gages are formed that overlie a buried cavity. The cavity is formed by a single sided semiconductor fabrication process that includes a pair of preferential etching steps and an epitaxial deposition step.

US Patent:

49457691, Aug 7, 1990

Filed:

Mar 6, 1989

Appl. No.:

7/319023

Inventors:

Diane W. Sidner - Noblesville IN
Douglas J. Yoder - Sharpsville IN
David E. Moss - Kokomo IN

Assignee:

Delco Electronics Corporation - Kokomo IN

International Classification:

G01L 708
G01L 906

US Classification:

73727

Abstract:

A pressure sensor uses a monocrystalline silicon chip that has a diaphragm portion in which strain gages are formed that overlie a buried cavity. The cavity is formed by a single sided semiconductor fabrication process that includes a pair of preferential etching steps and an epitaxial deposition step.