Edward I Tsidilkovski

US Patent:

7403023, Jul 22, 2008

Filed:

Mar 14, 2006

Appl. No.:

11/376755

Inventors:

Kenneth Steeples - Billerica MA, US
Edward Tsidilkovski - Chelmsford MA, US

Assignee:

QC Solutions, Inc. - Billerica MA

International Classification:

G01R 31/302

US Classification:

324752, 3241581

Abstract:

The invention relates to the use of the metrology methods and the related apparatus disclosed herein that incorporate thermal treatment devices and methods that improve defect detection. Specifically, in one aspect the invention relates to method of thermally treating a semiconductor wafer such that an acceleration of interstitial defect migration is achieved while leaving vacancy defects substantially unaltered.

US Patent:

20040191936, Sep 30, 2004

Filed:

Mar 28, 2003

Appl. No.:

10/402621

Inventors:

Edward Tsidilkovski - North Andover MA, US
Kenneth Steeples - N. Billerica MA, US

Assignee:

QC Solutions, Inc. - North Billerica MA

International Classification:

G01R031/26

US Classification:

438/018000

Abstract:

An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.

US Patent:

20080020549, Jan 24, 2008

Filed:

Jul 20, 2006

Appl. No.:

11/490491

Inventors:

Edward Tsidilkovski - Chelmsford MA, US
Kenneth Steeples - Billerica MA, US

Assignee:

QC Solutions, Inc. - Billerica MA

International Classification:

H01L 21/00

US Classification:

438464

Abstract:

A method and apparatus for forming an oxide layer on semiconductors using a combination of ultraviolet rays and heat. The apparatus comprises a chamber having a top surface and a bottom surface and defining a wafer holding cavity; an ultraviolet source at the top surface of said chamber; an infrared source at the bottom surface of the chamber; and an oxygen gas inlet for passing oxygen gas through the chamber. Oxygen gas entering the chamber through the oxygen gas inlet is ionized by ultraviolet rays from the ultraviolet source and reacts with the silicon wafer to create an oxide layer on the silicon wafer in the cavity. Infrared radiation from the infrared source heats the silicon wafer to accelerate the creation of the oxide layer on said silicon wafer.

US Patent:

20080036464, Feb 14, 2008

Filed:

Jul 27, 2007

Appl. No.:

11/881730

Inventors:

Kenneth Steeples - Billerica MA, US
Edward Tsidilkovski - Chelmsford MA, US
William Goldfarb - Malden MA, US

Assignee:

QC Solutions, Inc. - Billerica MA

International Classification:

G01N 27/60

US Classification:

324452000

Abstract:

A probe adapted for characterization of a semiconductor wafer having a surface. In one embodiment, the probe includes a source of modulated light; an optical fiber in optical communication with the source of modulated light, the optical fiber having a face and comprises a fiber core; and a transparent conductive layer coating the face of the optical fiber. Light from the source of modulated light is directed along the fiber core of the optical fiber through the face of the optical fiber to the surface of the semiconductor wafer. The optically transparent conductive layer detects charges from the surface of the semiconductor wafer.

US Patent:

20080048636, Feb 28, 2008

Filed:

Aug 16, 2007

Appl. No.:

11/894032

Inventors:

Edward Tsidilkovski - Chelmsford MA, US
Kenneth Steeples - Billerica MA, US

Assignee:

QC Solutions, Inc. - Billerica MA

International Classification:

G01J 1/42

US Classification:

324071500

Abstract:

A method and apparatus for thickness measurement of an active layer of a silicon-on-insulator material comprising a layered structure of silicon film, a buried oxide layer and a silicon substrate. In one embodiment, the method comprises the steps of directing a low intensity light of an energy greater than the silicon band-gap on the silicon film, the energy of light sufficient to be substantially absorbed within the silicon film such that the error from the substrate excitation is small compared to the small signal calibration of the apparatus; modifying the surface potential with the chemical treatment, electrical bias or corona, measuring surface photovoltage of the silicon film; and calculating the thickness of the silicon film in response to a non-contact photovoltage measurement of the semiconductor layered structure.

US Patent:

20080182347, Jul 31, 2008

Filed:

Dec 3, 2007

Appl. No.:

11/998901

Inventors:

Kenneth Steeples - Billerica MA, US
Adam Bertuch - Salem MA, US
Edward Tsidilkovski - Chelmsford MA, US

Assignee:

QC Solutions, Inc. - Billerica MA

International Classification:

H01L 21/66
B05C 11/00

US Classification:

438 14, 118712, 257E21521

Abstract:

A method of in-line characterization of ion implant process, during the SOI bond and cleave manufacturing or engineered silicon layer fabrication. In one embodiment, the method includes the steps of illuminating the engineered donor wafer using a modulated light source; performing a non-contact SPV measurement on the silicon wafer; measuring a dynamic charge (Q) in response to implant induced crystal damage; and determining the accuracy and uniformity of the value of an implant parameter in response to the dynamic charge. In another embodiment, In another embodiment, the step of determining utilizes the equation V≈kTΦ/ωQwhere Vis photo voltage generated in the implanted wafer, Φ is a light flux of the modulated light source, T is temperature of the wafer, and ω is a light modulation frequency of the modulated light source.

US Patent:

20200321363, Oct 8, 2020

Filed:

May 8, 2017

Appl. No.:

16/301248

Inventors:

- Oxford MA, US
Alexander LIMANOV - Millburn NJ, US
Michael VON DADELSZEN - Merrimack NH, US
Dan PERLOV - Sudbury MA, US
Edward TSIDILKOVSKI - Chelmsford MA, US
John HICKS - W. Brookfield MA, US

International Classification:

H01L 27/12
G01N 21/84
G01N 21/47
B23K 26/03
B23K 26/0622
B23K 26/064
B23K 26/06
B23K 26/08
B23K 26/082
B23K 26/53
H01L 21/02
H01L 21/66
H01L 21/67

Abstract:

A method of measuring morphological characteristics of a laser annealed film having a crystalline structure, which is defined by at least one row of side-to-side positioned grains each having a length (Lg), which is uniform for the grains, and width (Wg), wherein a length of the row (Lr) corresponds to a cumulative width Wg of the grains and creates a diffraction of various orders of diffraction, the method includes generating a monochromatic light; training the monochromatic light onto a surface of the laser annealed film at an angle varying in a range between 0 (incident) and grazing angles; and measuring variations of properties of the monochromatic light diffracted from the surface, thereby measuring the morphological characteristics of the laser annealed film along the length (Lr) of the one row.