Edward J Vajda

US Patent:

53127803, May 17, 1994

Filed:

Dec 16, 1992

Appl. No.:

7/991806

Inventors:

Arun K. Nanda - Bethlehem PA
Mark J. Sundahl - Emmaus PA
Edward J. Vajda - Allentown PA

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 21302

US Classification:

437225

Abstract:

A method for forming an anti-reflective coating useful in the fabrication of integrated circuits is discussed. Applicants have found that preheating semiconductor wafers prior to the application of amorphous silicon anti-reflective coatings tends to reduce undesirable particulates which may attach to the wafer. The process is illustratively performed in a Varian 3180 machine having four stations. Illustratively, the wafer may be preheated between 70. degree. C. and 175. degree. C. prior to and during the sputter deposition of an amorphous silicon anti-reflective coating.

US Patent:

53523288, Oct 4, 1994

Filed:

Dec 15, 1992

Appl. No.:

7/991064

Inventors:

Yaw S. Obeng - Allentown PA
Edward J. Vajda - Allentown PA

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2100
H01L 2102
B44C 122
C03C 1500

US Classification:

156646

Abstract:

The onset of haze on silicon wafers is controlled by treating the wafers with a chemical selected from the group consisting of hot water and isopropyl alcohol and then storing the treated wafers in an inert atmosphere such as nitrogen or argon.

US Patent:

54416167, Aug 15, 1995

Filed:

Dec 21, 1993

Appl. No.:

8/171123

Inventors:

Arun K. Nanda - Bethlehem PA
Mark J. Sundahl - Emmaus PA
Edward J. Vajda - Allentown PA

Assignee:

AT&T Corp. - Murray Hill NJ

International Classification:

C23C 1434
H01L 21302

US Classification:

20419223

Abstract:

A method for forming an anti-reflective coating useful in the fabrication of integrated circuits is discussed. Applicants have found that preheating semiconductor wafers prior to the application of amorphous silicon anti-reflective coatings tends to reduce undesirable particulates which may attach to the wafer. The process is illustratively performed in a Varian 3180 machine having four stations. Illustratively, the wafer may be preheated between 70. degree. C. and 175. degree. C. prior to and during the sputter deposition of an amorphous silicon anti-reflective coating.