Edward J Weber

US Patent:

53011244, Apr 5, 1994

Filed:

Sep 9, 1993

Appl. No.:

8/118984

Inventors:

Ken T. Chan - Wappingers Falls NY
Donald E. Davis - Poughkeepsie NY
William A. Enichen - Poughkeepsie NY
Cecil T. Ho - Poughkeepsie NY
Edward V. Weber - Poughkeepsie NY
Guenther Langner - Glen NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 1500
G01J 100
A61N 500

US Classification:

364490

Abstract:

A pattern is aligned and exposed with a lithography system so that chips larger than the deflection field can be formed by exposing M. times. N fields in a mosaic pattern. The method corrects the deflection field to compensate for the orientation of a previous pattern on a substrate and compensates for errors due to height caused by the beam landing non perpendicular to the target. Two basic procedures disclosed are called "3-mark" which are only applicable to 2. times. 2 arrays of fields, and "M. times. N" which covers the general situation, but with slightly less accuracy.

US Patent:

D3201970, Sep 24, 1991

Filed:

Jun 23, 1988

Appl. No.:

7/210645

Inventors:

Edward W. Weber - Norwalk CT

Assignee:

Contel IPC, Inc. - Stamford CT

US Classification:

D14114

US Patent:

D3136000, Jan 8, 1991

Filed:

Jun 23, 1988

Appl. No.:

7/210642

Inventors:

Edward W. Weber - Norwalk CT

Assignee:

Contel IPC, Inc. - Stamford CT

US Classification:

D14241

US Patent:

D3136019, Jan 8, 1991

Filed:

Jun 23, 1988

Appl. No.:

7/210644

Inventors:

Edward W. Weber - Norwalk CT

Assignee:

Contel IPC, Inc. - Stamford CT

US Classification:

D14241

US Patent:

42438667, Jan 6, 1981

Filed:

Jan 11, 1979

Appl. No.:

6/002499

Inventors:

Hans C. Pfeiffer - Ridgefield CT
Philip M. Ryan - Hopewell Junction NY
Edward V. Weber - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B23K 1500
G21K 108

US Classification:

219121EK

Abstract:

In electron beam apparatus having a souce of electrons and a target area toward which the electrons are directed, electron beam forming means are provided along the path from the source to the target. These forming means include a first beam shaping member having a first spot shaping aperture therein, a second beam shaping member having a second spot shaping aperture therein, and means focusing the image of the first aperture in the plane of the second aperture to thereby form a composite spot shape defined by the image of the first aperture and the second aperture. Further means are provided for focusing the image of the composite spot in the target area. Preferably, the apertures are square shaped. Thus, by varying the position of the superimposed image of the first aperture with respect to the second aperture, a wide variety of rectangular shaped composite spots with different dimensions is obtainable. This permits the exposure of rectilinear patterns, e. g.

US Patent:

41490851, Apr 10, 1979

Filed:

Jan 16, 1978

Appl. No.:

5/869972

Inventors:

Donald E. Davis - Wappingers Falls NY
Edward V. Weber - Poughkeepsie NY
Maurice C. Williams - Wappingers Falls NY
Ollie C. Woodard - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01J 3700

US Classification:

250492A

Abstract:

A method and apparatus is described for performing automatic overlay measurements on wafers utilized in semiconductor manufacturing. The overlay measurements are made at selected sites on a given wafer where a single bar pattern has been overlaid over a double bar pattern. The position of the single bar center line with respect to the center line between the double bars is a direct indication of the overlay error of the two patterns. The overlay error is measured in both the X and Y dimensions and is utilized to monitor the overlay error or to produce statistics and correlations to system parameters so that the sources of overlay errors may be identified and the errors eliminated or minimized on subsequent wafers being processed.

US Patent:

43651631, Dec 21, 1982

Filed:

Dec 19, 1980

Appl. No.:

6/218323

Inventors:

Donald E. Davis - Wappingers Falls NY
Richard D. Moore - Hopewell Junction NY
Philip M. Ryan - Hopewell Junction NY
Edward V. Weber - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01J 3700

US Classification:

2504911

Abstract:

This describes an automatic defect inspection system as could be applied to metallized masks or other patterns. The system causes each subfield to be individually aligned for inspection irrespective of the previous alignment of the pattern or any other sub-field. This is accomplished by scanning a preselected portion of each sub-field and adjusting the position of the scan based on the resulting signal while scanning a pre-established portion of the sub-field. In this way a portion of each sub-field is used as an alignment mark and stepping errors avoided. Once alignment is achieved a probe, comparable to the size of the minimum defect to be detected is scanned over the sub-field with an overlapping pattern to find defects such as excessive metal, metal in improper places or points where the metal is missing.

US Patent:

D3186601, Jul 30, 1991

Filed:

Jun 23, 1988

Appl. No.:

7/211400

Inventors:

Edward W. Weber - Norwalk CT

Assignee:

Contel IPC, Inc. - Stamford CT

US Classification:

D14142