Edward M Weber

US Patent:

53011244, Apr 5, 1994

Filed:

Sep 9, 1993

Appl. No.:

8/118984

Inventors:

Ken T. Chan - Wappingers Falls NY
Donald E. Davis - Poughkeepsie NY
William A. Enichen - Poughkeepsie NY
Cecil T. Ho - Poughkeepsie NY
Edward V. Weber - Poughkeepsie NY
Guenther Langner - Glen NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 1500
G01J 100
A61N 500

US Classification:

364490

Abstract:

A pattern is aligned and exposed with a lithography system so that chips larger than the deflection field can be formed by exposing M. times. N fields in a mosaic pattern. The method corrects the deflection field to compensate for the orientation of a previous pattern on a substrate and compensates for errors due to height caused by the beam landing non perpendicular to the target. Two basic procedures disclosed are called "3-mark" which are only applicable to 2. times. 2 arrays of fields, and "M. times. N" which covers the general situation, but with slightly less accuracy.

US Patent:

41490851, Apr 10, 1979

Filed:

Jan 16, 1978

Appl. No.:

5/869972

Inventors:

Donald E. Davis - Wappingers Falls NY
Edward V. Weber - Poughkeepsie NY
Maurice C. Williams - Wappingers Falls NY
Ollie C. Woodard - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01J 3700

US Classification:

250492A

Abstract:

A method and apparatus is described for performing automatic overlay measurements on wafers utilized in semiconductor manufacturing. The overlay measurements are made at selected sites on a given wafer where a single bar pattern has been overlaid over a double bar pattern. The position of the single bar center line with respect to the center line between the double bars is a direct indication of the overlay error of the two patterns. The overlay error is measured in both the X and Y dimensions and is utilized to monitor the overlay error or to produce statistics and correlations to system parameters so that the sources of overlay errors may be identified and the errors eliminated or minimized on subsequent wafers being processed.

US Patent:

43651631, Dec 21, 1982

Filed:

Dec 19, 1980

Appl. No.:

6/218323

Inventors:

Donald E. Davis - Wappingers Falls NY
Richard D. Moore - Hopewell Junction NY
Philip M. Ryan - Hopewell Junction NY
Edward V. Weber - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01J 3700

US Classification:

2504911

Abstract:

This describes an automatic defect inspection system as could be applied to metallized masks or other patterns. The system causes each subfield to be individually aligned for inspection irrespective of the previous alignment of the pattern or any other sub-field. This is accomplished by scanning a preselected portion of each sub-field and adjusting the position of the scan based on the resulting signal while scanning a pre-established portion of the sub-field. In this way a portion of each sub-field is used as an alignment mark and stepping errors avoided. Once alignment is achieved a probe, comparable to the size of the minimum defect to be detected is scanned over the sub-field with an overlapping pattern to find defects such as excessive metal, metal in improper places or points where the metal is missing.

US Patent:

45815372, Apr 8, 1986

Filed:

Mar 23, 1984

Appl. No.:

6/592986

Inventors:

Wallace J. Guillaume - Poughkeepsie NY
John F. Loughran - Stormville NY
Jan Rogoyski - Wappingers Falls NY
Robert A. Simpson - Wappingers Falls NY
Edward V. Weber - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01J 3700

US Classification:

2504911

Abstract:

A method of forming inspection patterns for inspecting a workpiece, e. g. , for electron beam inspection of optical photomasks. The inspection patterns are formed from the workpiece patterns themselves by applying a first positive windage to the workpiece patterns, inverting the first positive windaged workpiece patterns and applying a second positive windage to the inverted first positive windaged workpiece patterns. The inspection patterns so produced will contain the requisite guard band and the requisite overlap of abutting patterns.

US Patent:

45462607, Oct 8, 1985

Filed:

Jun 30, 1983

Appl. No.:

6/509515

Inventors:

Robert A. Simpson - Wappingers Falls NY
Ralph R. Trotter - Hopewell Junction NY
Edward V. Weber - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01J 3700

US Classification:

2504911

Abstract:

An alignment system for registration of a scanning beam in a mask inspection tool. Minimum scan widths (W) in the registration process are attained thereby increasing registration sensitivity. This technique allows initial placement of the E-Beam to be outside the capture range so that the scan on one side is completely off the metal (on glass) and the scan on the other side is completely on the metal. Correction signals are obtained by comparing the backscattered electron signals from the two scans with the magnitude of the signal being indicative of the amount of correction required and the sign being indicative of the direction of correction.

US Patent:

40004406, Dec 28, 1976

Filed:

Jul 26, 1974

Appl. No.:

5/492096

Inventors:

Alan V. Hall - Wappingers Falls NY
Merlyn H. Perkins - Hopewell Junction NY
Hans C. Pfeiffer - Ridgefield CT
Edward V. Weber - Poughkeepsie NY
Ollie C. Woodard - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01J 2952
H01J 2954

US Classification:

315383

Abstract:

A beam of charged particles has its alignment and brightness alternately controlled in accordance with the current of the beam. The measurements of the current and any corrections for alignment or brightness are made when the beam is not applied to a target.

US Patent:

52850749, Feb 8, 1994

Filed:

Jun 3, 1992

Appl. No.:

7/893172

Inventors:

Don F. Haire - Verbank NY
Cecil T. Ho - Poughkeepsie NY
Guenther O. Langner - Glen NY
Werner Stickel - Ridgefield CT
Edward V. Weber - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01J 37147

US Classification:

250396R

Abstract:

A dynamic correction arrangement for an electron beam projection/deflection system provides high order correction values for deflection in accordance with a correction equation. Particularly as applied to high accuracy telecentric deflection, the coefficients of terms of the correction equation may be determined by calibration for a small number of test points. Correction values may be stored in a look-up table or computed in real time by using a math co-processor in a processing pipeline. The correction provided corrects landing angle errors through the third order in telecentric projection/deflection systems such as systems utilizing variable axis immersion lenses.