Elizabeth Anh Do Nelson

US Patent:

53668022, Nov 22, 1994

Filed:

Dec 1, 1992

Appl. No.:

7/983903

Inventors:

Elizabeth H. Nelson - Springfield VA

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

G01D 1510

US Classification:

428336

Abstract:

An improved infrared detector element and an improved method for manufactng same is provided. A commercially available rough art wafer of ferroelectric material is ion milled under conditions which provide an extremely thin element with a near flawless detection surface.

US Patent:

52425371, Sep 7, 1993

Filed:

Apr 30, 1991

Appl. No.:

7/693470

Inventors:

Elizabeth H. Nelson - Springfield VA

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

B23C 300

US Classification:

156643

Abstract:

An improved infrared detector element and an improved method for manufacturing same is provided. A commercially available rough art wafer of ferroelectric material is ion milled under conditions which provide an extremely thin element with a near flawless detection surface.

US Patent:

53008073, Apr 5, 1994

Filed:

Jan 22, 1992

Appl. No.:

7/823749

Inventors:

Elizabeth H. Nelson - Springfield VA

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01L 2302
H01L 2312

US Classification:

257632

Abstract:

The invention is related to electronic and more specifically to photo-electronic devices manufactured by means of thin film layering techniques. The invention proposes the use of polymer, copolymer, polyamide and similar organic casting materials, in layers 500 to 10,000 angstroms thick, as protective barriers between layers where the processing of one layer would be adversely affected by or would damage an adjacent previously formed layer.

US Patent:

54115990, May 2, 1995

Filed:

Apr 12, 1994

Appl. No.:

8/227741

Inventors:

Stuart B. Horn - Fairfax VA
Elizabeth H. Nelson - Springfield VA

Assignee:

The United States of America as represented the Secretary of the Army - Washington DC

International Classification:

H01L 3500
H01L 3502
H01L 3504

US Classification:

136203

Abstract:

A nanoporous semiconductor material and fabrication technique for use as thermoelectric elements. Starting precursors are mixed in solution so as to thoroughly dissolve in solution which is then reduced. A second phase may be added in solution to provide nanoinclusions which may be subsequently removed. A nanoporous semiconductor is formed whereby lattice thermal conductivity is greatly reduced, due to enhanced phonon scattering on the order of 10 W/cm. multidot. degree. K. The nanoporous semiconductor material may be used as the n- and p- legs in a Peltier couple utilized for a thermoelectric cooler, a cryogenic cooler, thermoelectric power generator, or a thermoelectric heat pump.

US Patent:

54784255, Dec 26, 1995

Filed:

Sep 16, 1994

Appl. No.:

8/307208

Inventors:

Elizabeth H. Nelson - Springfield VA

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

B29C 3902
B29C 3936

US Classification:

156246

Abstract:

The invention is related to electronic and more specifically to photo-electronic devices manufactured by means of thin film layering techniques. The invention proposes the use of polymer, copolymer, polyamide and similar organic casting materials, in layers 500 to 10,000 angstroms thick, as protective barriers between layers where the processing of one layer would be adversely affected by or would damage an adjacent previously formed layer.

US Patent:

62222619, Apr 24, 2001

Filed:

May 3, 1999

Appl. No.:

9/303637

Inventors:

Stuart B. Horn - Fairfax VA
Elizabeth H. Nelson - Springfield VA

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01L 23053

US Classification:

257701

Abstract:

A hybrid microelectronic circuit formed from two or more chips of different electronic materials and having a preformed barrier layer having at least a nanostructured plastic/ceramic layer between the chips and preferably including a thin layer of an aerogel also.

US Patent:

58348280, Nov 10, 1998

Filed:

Sep 20, 1993

Appl. No.:

8/122981

Inventors:

Stuart B. Horn - Fairfax VA
Elizabeth H. Nelson - Springfield VA

Assignee:

The United States of America, as represented by the Secretary of the Army - Washington DC

International Classification:

H01L 2906
H01L 2338
H01L 2716
H01L 3500

US Classification:

257618

Abstract:

A nanoporous semiconductor material and fabrication technique for use as rmoelectric elements. Starting precursors are mixed in solution so as to thoroughly dissolve in solution which is then reduced. A second phase may be added in solution to provide nanoinclusions which may be subsequently removed. A nanoporous semiconductor is formed whereby lattice thermal conductivity is greatly reduced, due to enhanced phonon scattering on the order of 10 W/cm. multidot. degree. K. The nanoporous semiconductor material may be used as the n- and p- legs in a Peltier couple utilized for a thermoelectric cooler, a cryogenic cooler, thermoelectric power generator, or a thermoelectric heat pump.