Elizabeth Deann Neville

US Patent:

20220189793, Jun 16, 2022

Filed:

Dec 14, 2020

Appl. No.:

17/120976

Inventors:

- Santa Clara CA, US
Chahal Neema - Mountain View CA, US
Abhijit A. Kangude - Mountain View CA, US
Elizabeth Neville - Sunnyvale CA, US
Vishal S. Jamakhandi - Bengaluru, IN
Kurt R. Langeland - San Jose CA, US
Syed A. Alam - San Jose CA, US
Ming Xu - San Jose CA, US
Kenneth Le - Fremont CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/67
H01J 37/32

Abstract:

Exemplary substrate processing systems may include a lid plate. The systems may include a gas splitter seated on the lid plate. The gas splitter may define a plurality of gas inlets and gas outlets. A number of gas outlets may be greater than a number of gas inlets. The systems may include a plurality of valve blocks that are interfaced with the gas splitter. Each valve block may define a number of gas lumens. An inlet of each of the gas lumens may be in fluid communication with one of the gas outlets. An interface between the gas splitter and each of the valve blocks may include a choke. The systems may include a plurality of output manifolds seated on the lid plate. The systems may include a plurality of output weldments that may couple an outlet of one of the gas lumens with one of the output manifolds.

US Patent:

20180337075, Nov 22, 2018

Filed:

May 17, 2018

Appl. No.:

15/982785

Inventors:

- Santa Clara CA, US
Kartik SHAH - Saratoga CA, US
Norman L. TAM - Cupertino CA, US
Matthew SPULLER - Belmont CA, US
Kong Lung Samuel CHAN - Newark CA, US
Elizabeth NEVILLE - Palo Alto CA, US
Preetham RAO - Bangalore, IN
Abhilash J. MAYUR - Salinas CA, US
Gia Pham - San Jose CA, US

International Classification:

H01L 21/67
C23C 16/56
C23C 16/458
C23C 16/455

Abstract:

Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.