Elsa Ariesanti

US Patent:

20130040095, Feb 14, 2013

Filed:

Aug 10, 2012

Appl. No.:

13/572462

Inventors:

Elsa Ariesanti - Watertown MA, US
Douglas S. McGregor - Riley KS, US

International Classification:

C30B 25/16

US Classification:

428 98, 117 88

Abstract:

A crystal can be formed using vapor deposition. In one set of embodiments, the crystal can be grown such that the crystal selectively grown along a particular surface at a relatively faster rate as compared to another surface. In another embodiment, the assist material may aid in transporting or depositing the vapor species of a constituent to surfaces of the crystal. In a further set of embodiments, the crystal can be vapor grown in the presence of an assist material that is attracted to or repelled from a particular location of the crystal to increase or reduce crystal growth rate at a region adjacent to the location. The position of the relatively locally greater net charge within the assist material may affect the crystal plane to which the assist material is attracted or repelled. An as-grown crystal may be achieved that has a predetermined geometric shape.