Emanuel C Cooper

US Patent:

6613602, Sep 2, 2003

Filed:

Dec 13, 2001

Appl. No.:

10/015239

Inventors:

Emanuel Israel Cooper - Scarsdale NY
Steven Alan Cordes - Yorktown Heights NY
David R. DiMilia - Wappingers Falls NY
Bruce Bennett Doris - Brewster NY
James Patrick Doyle - Bronx NY
Uttam Shyamalindu Ghoshal - Austin TX
Robin Altman Wanner - Mount Kisco NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2100

US Classification:

438 54, 257930

Abstract:

A method and system for forming a thermoelement for a thermoelectric cooler is provided. In one embodiment a substrate having a plurality of pointed tips covered by a metallic layer is formed. Portions of the metallic layer are covered by an insulator and other portions of the metallic layer are exposed. Next, a patterned layer of thermoelectric material is formed by depositions extending from the exposed portions of the metallic layer in the presence of a deposition mask. Finally, a metallic layer is formed to selectively contact the patterned layer of thermoelectric material.

US Patent:

6855240, Feb 15, 2005

Filed:

Jun 9, 2003

Appl. No.:

10/457194

Inventors:

Emanuel Israel Cooper - Scarsdale NY, US
Thomas Edward Dinan - San Jose CA, US
Lubomyr Taras Romankiw - New York NY, US
Hong Xu - Albany CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

D25D003/56

US Classification:

205103, 205104, 205259, 205260

Abstract:

A cobalt-iron alloy film having saturation magnetization of at least about 2. 30 Telsa. The film alloy includes about 55 wt % to about 75 wt. % iron and the remainder cobalt. The film is made by a process in which the film is electrodeposited from an aqueous medium which includes one or more ferrous salts, one or more cobaltous salts, a buffer having a pKa of about 6 to about 8, at least one carboxylic acid having a pKa of between about 3. 5 and about 5. 5, an aromatic sulfinic acid or its salt and optionally, a halide salt and/or a surfactant. The alloy film is useful as a write head in magnetic recording.

US Patent:

7037559, May 2, 2006

Filed:

May 1, 2003

Appl. No.:

10/426725

Inventors:

Emanuel I. Cooper - Scarsdale NY, US
Charles C. Goldsmith - Poughkeepsie NY, US
Stephen Kilpatrick - Lagrangeville NY, US
Carmen M. Mojica - Dorado PR, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C25D 3/54
C22C 12/00
B05D 1/18
B05D 7/17
B05D 7/21

US Classification:

427437, 4274431, 420562, 420557, 428615, 428646, 428620, 428936

Abstract:

A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.

US Patent:

7056648, Jun 6, 2006

Filed:

Sep 17, 2003

Appl. No.:

10/664017

Inventors:

Emanuel Cooper - Scarsdale NY, US
Bruce Furman - Poughquag NY, US
David Rath - Stormville NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7/34
C23F 1/18

US Classification:

430318, 216105

Abstract:

Copper and copper alloys are etched to provide uniform and smooth surface by employing an aqueous composition that comprises an oxidant, a mixture of at least one weak complexant and at least one strong complexant for the copper or copper alloy, and water and has a pH of about 6 to about 12 so as to form an oxidized etch controlling layer and to uniformly remove the copper or copper alloy; and then removing the oxidized etch controlling layer with a non-oxidizing composition. Copper and copper alloy structure, having smooth upper surfaces are also provided.

US Patent:

7276296, Oct 2, 2007

Filed:

Jun 28, 2005

Appl. No.:

11/167277

Inventors:

Emanuel I. Cooper - Scarsdale NY, US
Charles C. Goldsmith - Poughkeepsie NY, US
Stephen Kilpatrick - Lagrangeville NY, US
Carmen M. Mojica - Dorado PR, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B32B 3/02
B32B 5/14
B32B 15/01

US Classification:

428646, 428615, 428620, 228 563

Abstract:

A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.

US Patent:

7537709, May 26, 2009

Filed:

Apr 12, 2006

Appl. No.:

11/401898

Inventors:

Emanuel I. Cooper - Scarsdale NY, US
Bruce Furman - Poughquag NY, US
David L. Rath - Stormville NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C09K 13/00

US Classification:

252 791, 438745

Abstract:

Copper and copper alloys are etched to provide uniform and smooth surface by employing an aqueous composition that comprises an oxidant, a mixture of at least one weak complexant and at least one strong complexant for the copper or copper alloy, and water and has a pH of about 6 to about 12 so as to form an oxidized etch controlling layer and to uniformly remove the copper or copper alloy; and then removing the oxidized etch controlling layer with a non-oxidizing composition. Copper and copper alloy structure, having smooth upper surfaces are also provided.

US Patent:

7736474, Jun 15, 2010

Filed:

Oct 7, 2005

Appl. No.:

11/245490

Inventors:

Keiichi Kurashina - Tokyo, JP
Mizuki Nagai - Tokyo, JP
Satoru Yamamoto - Tokyo, JP
Hiroyuki Kanda - Tokyo, JP
Koji Mishima - Tokyo, JP
Shinya Morisawa - Tokyo, JP
Junji Kunisawa - Tokyo, JP
Kunihito Ide - Tokyo, JP
Hidenao Suzuki - Tokyo, JP
Emanuel Cooper - Scarsdale NY, US
Philippe Vereecken - Leuven, BE
Hariklia Deligianni - Tenafly NJ, US

Assignee:

Ebara Corporation - Tokyo
International Business Machines Corporation - Armonk NY

International Classification:

C25D 17/00
C25D 7/12

US Classification:

204223, 204222, 2042281

Abstract:

A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.

US Patent:

8026200, Sep 27, 2011

Filed:

May 1, 2009

Appl. No.:

12/434321

Inventors:

Emanuel Cooper - Scarsdale NY, US
Julie Cissell - Danbury CT, US
Renjie Zhou - Plainsboro NJ, US
Michael B. Korzenski - Danbury CT, US
George G. Totir - Newtown CT, US
Mahmoud Khojasteh - Poughkeepsie NY, US

Assignee:

Advanced Technology Materials, Inc. - Danbury CT
International Business Machines Corp. - Armonk NY

International Classification:

H01L 21/02

US Classification:

510175, 510176, 134 13

Abstract:

A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).