Emily C Gallagher

US Patent:

7198872, Apr 3, 2007

Filed:

May 25, 2004

Appl. No.:

10/709733

Inventors:

Emily E. Gallagher - Burlington VT, US
Louis M. Kindt - Milton VT, US
Carey W. Thiel - South Burlington VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 1/00

US Classification:

430 5

Abstract:

A light scattering EUVL mask and a method of forming the same comprises depositing a crystalline silicon layer over an ultra low expansion substrate, depositing a hardmask over the crystalline silicon layer, patterning the hardmask; etching the crystalline silicon layer, removing the hardmask, and depositing a Mo/Si layer over the crystalline silicon layer, wherein etched regions of the crystalline silicon layer comprise uneven surfaces in the etched regions. The method further comprises depositing a photoresist mask over the hardmask, creating a pattern in the photoresist mask, and transferring the pattern to the hardmask. The Mo/Si layer comprises uneven surfaces conformal with the sloped surfaces of the crystalline silicon layer, wherein the sloped surfaces of the Mo/Si layer may be configured as roughened, jagged, sloped, or curved surfaces, wherein the uneven surfaces deflect incoming extreme ultraviolet radiation waves to avoid collection by exposure optics and prevent printing onto a semiconductor wafer.

US Patent:

7355680, Apr 8, 2008

Filed:

Jan 5, 2005

Appl. No.:

10/905453

Inventors:

Emily F. Gallagher - Burlington VT, US
Louis M. Kindt - Milton VT, US
James A. Slinkman - Montpelier VT, US
Richard E. Wistrom - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03B 27/62
G03F 9/00

US Classification:

355 75, 430 5

Abstract:

A method for adjusting the flatness of a lithographic mask includes determining an initial mask flatness of the mask, determining an applied stress for bringing the mask to a desired mask flatness, and determining a mounting temperature of a pellicle frame to be mounted to the mask, the mounting temperature corresponding to the applied stress. The actual temperature of the pellicle frame is adjusted to the determined mounting temperature.

US Patent:

7537114, May 26, 2009

Filed:

Jan 25, 2006

Appl. No.:

11/275694

Inventors:

Emily F. Gallagher - Burlington VT, US
Louis M. Kindt - Milton VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B65D 85/38
G03F 1/00
G03C 11/00
H01L 21/00

US Classification:

2063161, 430 5, 430644, 438800

Abstract:

An apparatus for and method of storing and transporting a photomask. A photomask storage container has fluid-tight walls, an opening for moving the photomask into and out of the container, and a sealable inlet for a storage fluid. The method includes placing the photomask in the storage container through the opening, introducing a storage fluid into the container through the inlet, closing the container opening and sealing the storage fluid inlet, whereby the storage fluid is essentially inert with respect to the photomask. The method then includes opening the container opening and contacting a surface of the photomask with an alcohol-containing gas while removing the photomask from the storage container to remove the storage fluid from the photomask surface.

US Patent:

7826038, Nov 2, 2010

Filed:

Feb 12, 2008

Appl. No.:

12/029506

Inventors:

Emily F. Gallagher - Burlington VT, US
Louis M. Kindt - Milton VT, US
James A. Slinkman - Montpellier VT, US
Richard E. Wistron - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03B 27/62
G03F 9/00

US Classification:

355 75, 430 5

Abstract:

A method for adjusting the flatness of a lithographic mask includes determining an initial mask flatness of the mask, determining an applied stress for bringing the mask to a desired mask flatness, and determining a mounting temperature of a pellicle frame to be mounted to the mask, the mounting temperature corresponding to the applied stress. The actual temperature of the pellicle frame is adjusted to the determined mounting temperature, and the pellicle frame is mounted to the mask at the mounting temperature.

US Patent:

8538129, Sep 17, 2013

Filed:

Oct 9, 2009

Appl. No.:

12/576597

Inventors:

Karen D. Badger - Milton VT, US
Emily E Gallagher - Burlington VT, US
Christoper Magg - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06K 9/00

US Classification:

382144

Abstract:

A method for characterizing the resolution of mask inspection tool using a test mask and a database containing defect data. A variety of defect types and sizes is programmed into the database, and the database is then used to inspect the defect-free mask. All defects programmed into the database are not captured in performing the method, so the resolution capability of an inspection tool can be determined.

US Patent:

20040131947, Jul 8, 2004

Filed:

Jan 7, 2003

Appl. No.:

10/248300

Inventors:

Emily Fisch Gallagher - Burlington VT, US
Louis Kindt - Milton VT, US
Mark Lawliss - South Burlington VT, US
Kenneth Racette - Fairfax VT, US
Carey Thiel - South Burlington VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F009/00

US Classification:

430/005000

Abstract:

A reflective mask, useful in extreme ultraviolet lithography (EUVL), and method of formation are disclosed. Instead of patterning an absorbing film stack, as is the case with conventional EUVL masks, the reflective film stack itself is patterned and etched to form a trench in the reflective stack. A hard mask is deposited directly on the reflective substrate. It is patterned and repaired. Then the reflective film is removed in the patterned area to create absorbing trenches. The hard mask may then be stripped or remain in place on the final mask. A liner may be formed on the trench to absorb radiation and protect the sidewalls.

US Patent:

20050243452, Nov 3, 2005

Filed:

Apr 28, 2004

Appl. No.:

10/709326

Inventors:

Emily Gallagher - Burlington VT, US
Rogert Leidy - Burlington VT, US
Michael Lercel - Williston VT, US
Kenneth Racette - Fairfax VT, US
Andrew Watts - Essex VT, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

G02B005/22

US Classification:

359888000, 359896000

Abstract:

A monolithic optical pellicle and method of making used to protect a photomask during photolithography processing. The monolithic optical pellicle is comprised of a pellicle plate having a recessed central portion integrally formed with a perimeter frame of the pellicle plate such that it is a one-piece optical pellicle. The monolithic optical pellicle comprises a material of sufficient rigidity to minimize distortions in and maximize durability of the pellicle when used in combination with the recessed portion having a thickness that prevents sagging thereof due to applied forces on the resultant monolithic optical pellicle. This recessed central portion is the optical pellicle portion of the present monolithic optical pellicle, while the integral perimeter frame is used to attach the monolithic optical pellicle at the desired stand-off distance to a photomask. The monolithic optical pellicle preferably comprises a material that is transparent to an exposure field at about 157 nm wavelengths.

US Patent:

20060191638, Aug 31, 2006

Filed:

Feb 28, 2005

Appl. No.:

10/906627

Inventors:

Timothy Dalton - Ridgefield CT, US
Emily Gallagher - Burlington VT, US
Louis Kindt - Milton VT, US
Carey Thiel - Williston VT, US
Andrew Watts - Essex VT, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

C23F 1/00
C23C 16/00

US Classification:

156345430, 11872300E

Abstract:

An apparatus (and method for operating the same) which allows etching different substrate etch areas of a substrate having different pattern densities at essentially the same etch rate. The apparatus includes (a) a chamber; (b) an anode and a cathode in the chamber; and (c) a bias power system coupled to the cathode, wherein the cathode includes multiple cathode segments. The operation method includes the steps of: (i) placing a substrate to be etched between the anode and cathode, wherein the substrate includes N substrate etch areas, and the N substrate etch areas are directly above the N cathode segments; (ii) determining N bias powers which, when being applied to the N cathode segments during an etching of the substrate, will result in essentially a same etch rate for the N substrate etch areas; and (iii) using the bias power system to apply the N bias powers the N cathode segments.