Eric Alan Lahaug

age ~57

from Boise, ID

Also known as:
  • Eric A Lahaug
  • Eric Allen Lahaug
  • Erica Lahaug
  • Eric A Lahung
  • Laura Lahaug
  • Eric Lahaug Alan
  • Laura Lattaug
Phone and address:
3335 E Red Stone Dr, Boise, ID 83712
2086290568

Eric Lahaug Phones & Addresses

  • 3335 E Red Stone Dr, Boise, ID 83712 • 2086290568
  • 8464 La Jolla St, Boise, ID 83709 • 2085621524 • 2086290568
  • Youngsville, LA
  • Baker City, OR
  • 9081 Ribbon Falls Loop, Bristow, VA 20136 • 7033310373
  • Manassas, VA
  • Meridian, ID
  • Prince William, VA
  • 4698 E Flores Ct, Boise, ID 83716

Work

  • Company:
    Micron technology
    Jul 1996
  • Position:
    Regional site customer quality manager

Education

  • Degree:
    Associate degree or higher

Skills

Process Integration • Dram • Semiconductors • Manufacturing • Flash

Industries

Semiconductors

Resumes

Eric Lahaug Photo 1

Regional Site Customer Quality Manager

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Location:
3335 east Red Stone Dr, Boise, ID 83712
Industry:
Semiconductors
Work:
Micron Technology
Regional Site Customer Quality Manager

Us Navy Mar 1988 - Mar 1996
Sonar Technician
Skills:
Process Integration
Dram
Semiconductors
Manufacturing
Flash

Us Patents

  • Methods Of Forming Semiconductor Devices And Methods Of Forming Field Emission Displays

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  • US Patent:
    6338938, Jan 15, 2002
  • Filed:
    Jan 25, 2000
  • Appl. No.:
    09/490934
  • Inventors:
    Eric A. Lahaug - Boise ID
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    C03C 500
  • US Classification:
    430314, 216 11, 216 42, 216 49, 216 51, 216 67, 445 24, 445 50
  • Abstract:
    In one aspect the invention includes a method of forming a semiconductor device, comprising: a) forming a layer over a substrate; b) forming a plurality of openings extending into the layer; c) depositing particles on the layer; d) collecting the particles within the openings; and e) using the collected particles as a mask during etching of the underlying substrate to define features of the semiconductor device. In another aspect, the invention includes a method of forming a field emission display, comprising: a) forming a silicon dioxide layer over a conductive substrate; b) forming a plurality of openings extending into the silicon dioxide layer; c) depositing particles on the silicon dioxide layer; d) collecting the particles within the openings; e) while using the collected particles as a mask, etching the conductive substrate to form a plurality of conically shaped emitters from the conductive substrate; and f) forming a display screen spaced from said emitters.
  • Methods For Forming Dual Gate Oxides

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  • US Patent:
    6716685, Apr 6, 2004
  • Filed:
    Aug 9, 2002
  • Appl. No.:
    10/215519
  • Inventors:
    Eric Lahaug - Meridian ID
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    H01L 2100
  • US Classification:
    438157, 438275, 438283
  • Abstract:
    Methods of forming dual gate oxides are provided. A first gate oxide layer and oxynitride layer is formed over a substrate. A portion of the first gate oxide and oxynitride layers is removed over a second area of the substrate, and a second gate oxide is formed thereon. The first gate oxide layer is simultaneously reoxidized. The reoxidized first gate oxide layer incorporates oxynitride and is thinner than a second gate oxide layer. Methods of forming the semiconductor devices and memory cells are also provided. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that is will not be used to interpret or limit the scope or meaning of the claims.
  • Shallow Trench Isolation In Dynamic Random Access Memory And Manufacturing Method Thereof

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  • US Patent:
    20130234280, Sep 12, 2013
  • Filed:
    Mar 16, 2012
  • Appl. No.:
    13/421979
  • Inventors:
    ARVIND KUMAR - TAOYUAN COUNTY, TW
    ERIC LAHAUG - BRISTOW VA, US
    DEVESH KUMAR DATTA - WOODSVALE, SG
    KEEN WAH CHOW - MARSILING RISE, SG
    CHIA MING YANG - KAOHSIUNG CITY, TW
    CHIEN-CHI LEE - TAIPEI CITY, TW
    FREDERICK DAVID FISHBURN - MORGAN HILL CA, US
  • Assignee:
    INOTERA MEMORIES, INC. - TAOYUAN COUNTY
  • International Classification:
    H01L 29/06
    H01L 21/762
  • US Classification:
    257506, 438423, 257E21556, 257E2902
  • Abstract:
    A manufacturing method of STI in DRAM includes the following steps. Step 1 is providing a substrate and step 2 is forming at least one trench in the substrate. Step 3 is doping at least one of side portions and bottom portions of the trench with a dopant. Step 4 is forming an oxidation inside the trench and step 5 is providing a planarization step to remove the oxidation. The stress of the corners of STI is reduced so as to modify the defect of the substrate and improve the DRAM variability in retention time.
  • Methods Of Forming Semiconductor Devices And Methods Of Forming Field Emission Displays

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  • US Patent:
    60371048, Mar 14, 2000
  • Filed:
    Sep 1, 1998
  • Appl. No.:
    9/145488
  • Inventors:
    Eric A. Lahaug - Boise ID
  • Assignee:
    Micron Display Technology, Inc. - Boise ID
  • International Classification:
    H01J 900
    G03C 500
  • US Classification:
    430314
  • Abstract:
    In one aspect the invention includes a method of forming a semiconductor device, comprising: a) forming a layer over a substrate; b) forming a plurality of openings extending into the layer; c) depositing particles on the layer; d) collecting the particles within the openings; and e) using the collected particles as a mask during etching of the underlying substrate to define features of the semiconductor device. In another aspect, the invention includes a method of forming a field emission display, comprising: a) forming a silicon dioxide layer over a conductive substrate; b) forming a plurality of openings extending into the silicon dioxide layer; c) depositing particles on the silicon dioxide layer; d) collecting the particles within the openings; e) while using the collected particles as a mask, etching the conductive substrate to form a plurality of conically shaped emitters from the conductive substrate; and f) forming a display screen spaced from said emitters.

Mylife

Eric Lahaug Photo 2

Asgeir Lahaug Skjetten 0...

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Christy Lahaug Eric Lahaug Eric Lahaug Eric Lahaug Henry Lahaug

Youtube

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