Eric Alan Lahaug

US Patent:

6338938, Jan 15, 2002

Filed:

Jan 25, 2000

Appl. No.:

09/490934

Inventors:

Eric A. Lahaug - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

C03C 500

US Classification:

430314, 216 11, 216 42, 216 49, 216 51, 216 67, 445 24, 445 50

Abstract:

In one aspect the invention includes a method of forming a semiconductor device, comprising: a) forming a layer over a substrate; b) forming a plurality of openings extending into the layer; c) depositing particles on the layer; d) collecting the particles within the openings; and e) using the collected particles as a mask during etching of the underlying substrate to define features of the semiconductor device. In another aspect, the invention includes a method of forming a field emission display, comprising: a) forming a silicon dioxide layer over a conductive substrate; b) forming a plurality of openings extending into the silicon dioxide layer; c) depositing particles on the silicon dioxide layer; d) collecting the particles within the openings; e) while using the collected particles as a mask, etching the conductive substrate to form a plurality of conically shaped emitters from the conductive substrate; and f) forming a display screen spaced from said emitters.

US Patent:

6716685, Apr 6, 2004

Filed:

Aug 9, 2002

Appl. No.:

10/215519

Inventors:

Eric Lahaug - Meridian ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 2100

US Classification:

438157, 438275, 438283

Abstract:

Methods of forming dual gate oxides are provided. A first gate oxide layer and oxynitride layer is formed over a substrate. A portion of the first gate oxide and oxynitride layers is removed over a second area of the substrate, and a second gate oxide is formed thereon. The first gate oxide layer is simultaneously reoxidized. The reoxidized first gate oxide layer incorporates oxynitride and is thinner than a second gate oxide layer. Methods of forming the semiconductor devices and memory cells are also provided. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that is will not be used to interpret or limit the scope or meaning of the claims.

US Patent:

20130234280, Sep 12, 2013

Filed:

Mar 16, 2012

Appl. No.:

13/421979

Inventors:

ARVIND KUMAR - TAOYUAN COUNTY, TW
ERIC LAHAUG - BRISTOW VA, US
DEVESH KUMAR DATTA - WOODSVALE, SG
KEEN WAH CHOW - MARSILING RISE, SG
CHIA MING YANG - KAOHSIUNG CITY, TW
CHIEN-CHI LEE - TAIPEI CITY, TW
FREDERICK DAVID FISHBURN - MORGAN HILL CA, US

Assignee:

INOTERA MEMORIES, INC. - TAOYUAN COUNTY

International Classification:

H01L 29/06
H01L 21/762

US Classification:

257506, 438423, 257E21556, 257E2902

Abstract:

A manufacturing method of STI in DRAM includes the following steps. Step 1 is providing a substrate and step 2 is forming at least one trench in the substrate. Step 3 is doping at least one of side portions and bottom portions of the trench with a dopant. Step 4 is forming an oxidation inside the trench and step 5 is providing a planarization step to remove the oxidation. The stress of the corners of STI is reduced so as to modify the defect of the substrate and improve the DRAM variability in retention time.

US Patent:

60371048, Mar 14, 2000

Filed:

Sep 1, 1998

Appl. No.:

9/145488

Inventors:

Eric A. Lahaug - Boise ID

Assignee:

Micron Display Technology, Inc. - Boise ID

International Classification:

H01J 900
G03C 500

US Classification:

430314

Abstract:

In one aspect the invention includes a method of forming a semiconductor device, comprising: a) forming a layer over a substrate; b) forming a plurality of openings extending into the layer; c) depositing particles on the layer; d) collecting the particles within the openings; and e) using the collected particles as a mask during etching of the underlying substrate to define features of the semiconductor device. In another aspect, the invention includes a method of forming a field emission display, comprising: a) forming a silicon dioxide layer over a conductive substrate; b) forming a plurality of openings extending into the silicon dioxide layer; c) depositing particles on the silicon dioxide layer; d) collecting the particles within the openings; e) while using the collected particles as a mask, etching the conductive substrate to form a plurality of conically shaped emitters from the conductive substrate; and f) forming a display screen spaced from said emitters.