Eric B Sharp

US Patent:

57468842, May 5, 1998

Filed:

Aug 13, 1996

Appl. No.:

8/696774

Inventors:

Subhash Gupta - Saratoga CA
Robert Flores - Austin TX
Michael Ross Stamm - Austin TX
Eric Thomas Sharp - Austin TX
Erich W. E. Denninger - Buda TX
Pamela G. Dye - Austin TX
Joel Samuel Utz - Austin TX
James K. Kai - San Francisco CA

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

H01L 2100

US Classification:

1566431

Abstract:

A method of forming a via in a interlevel dielectric of a semiconductor device wherein the via has a fluted sidewall. A semiconductor substrate is provided having a first conductive layer formed thereon. A dielectric layer is then formed on the first conductive layer. A photoresist layer is deposited on a dielectric layer and a contact opening is formed in the photoresist layer to expose a contact region of the dielectric layer. A first etch step is performed to remove portions of the dielectric layer proximal to the contact region to form a first stage of the fluted via. The first stage includes a first sidewall stage extending from an upper surface of the dielectric layer at an angle less than 50. degree. The first stage of the fluted via extends a first lateral distance which is greater than a lateral dimension of the contact opening. A second etch step is then performed to further remove portions of the dielectric layer to form a second stage of the fluted via.

US Patent:

58411968, Nov 24, 1998

Filed:

Nov 14, 1997

Appl. No.:

8/970314

Inventors:

Subhash Gupta - Saratoga CA
Robert Flores - Austin TX
Michael Ross Stamm - Austin TX
Eric Thomas Sharp - Austin TX
Erich W. E. Denninger - Buda TX
Pamela G. Dye - Austin TX
Joel Samuel Utz - Austin TX
James K. Kai - San Francisco CA

Assignee:

Advanced Micro Devices, Inc.

International Classification:

H01L 2100

US Classification:

257774

Abstract:

A method of forming a via in a interlevel dielectric of a semiconductor device wherein the via has a fluted sidewall. A semiconductor substrate is provided having a first conductive layer formed thereon. A dielectric layer is then formed on the first conductive layer. A photoresist layer is deposited on a dielectric layer and a contact opening is formed in the photoresist layer to expose a contact region of the dielectric layer. A first etch step is performed to remove portions of the dielectric layer proximal to the contact region to form a first stage of the fluted via. The first stage includes a first sidewall stage extending from an upper surface of the dielectric layer at an angle less than 50. degree. The first stage of the fluted via exterds a first lateral distance which is greater than a lateral dimension of the contact opening. A second etch step is then performed to further remove portions of the dielectric layer to form a second stage of the fluted via.

US Patent:

20210036473, Feb 4, 2021

Filed:

Aug 1, 2019

Appl. No.:

16/529701

Inventors:

- Wilsonville OR, US
Eric Sharp - Beaverton OR, US
Steven J. Paventy - Sandy OR, US
Chen Jui Lung - New Taipei City, TW
Xu Bo - Dongguan, CN
Rong Zhong Long - Dongguan, CN

Assignee:

Keystone Automotive Operations, Inc. - Wilsonville OR

International Classification:

H01R 24/76
H01R 13/66
H01R 13/453
H02G 3/08
H01R 13/639

Abstract:

The present disclosure is directed toward an electrical receptacle for installation in a wall adjacent an area allowing only a limited depth for the electrical receptacle, such as in recreational vehicles, for connection to an AC power source. The electrical receptacle may include a face cover defining an outer side and an inner side and a back enclosure defining a front edge and a rear edge. The face cover and the back enclosure may together define a receptacle depth, from the inner side of the face cover to the rear edge of the back enclosure, that is not greater than the limited depth. The electrical receptacle may provide a DC outlet and an AC outlet, with each outlet accessible adjacent the outer side of the face cover. The face cover and the back enclosure may define an internal volume and an electrical connector for connecting to an AC power source may be within the internal volume.