Eric W Singleton

US Patent:

6490140, Dec 3, 2002

Filed:

Mar 17, 2000

Appl. No.:

09/528346

Inventors:

Sining Mao - Savage MN
Zheng Gao - Bloomington MN
Eric W. Singleton - Greenfield MN

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B 539

US Classification:

36032411

Abstract:

A giant magnetoresistive stack for use in a magnetic read head includes a NiFeCr seed layer, a ferromagnetic free layer, at least one nonmagnetic spacer layer, at least one ferromagnetic pinned layer, and at least one PtMnX pinning layer, where X is selected from the group consisting of Cr, Pd, Nb, Re, Rh, Ta, Ru, Os, Zr, Hf, Ni, Co, and Fe. The ferromagnetic free layer has a rotatable magnetic moment. The ferromagnetic pinned layer has a fixed magnetic moment and is positioned adjacent to the PtMnX pinning layer. The nonmagnetic spacer layer is positioned between the free layer and the pinned layer. The NiFeCr seed layer is positioned adjacent to either the free layer or the pinning layer.

US Patent:

6683761, Jan 27, 2004

Filed:

Oct 17, 2001

Appl. No.:

09/981765

Inventors:

Eric W. Singleton - Greenfield MN
Kristin J. Duxstad - Eden Prairie MN
Paul E. Anderson - Eden Prairie MN

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B 533

US Classification:

36032411

Abstract:

An electrical interconnect is configured to provide an electrical connection between a first point and a second point. The interconnect includes a specular reflection layer adjacent a conductor layer. The conductor is configured to conduct electrons between the first and second points and the planar specular reflection layer confines the electrons to the conductor through specular reflection. This reduces electrical resistance of the electrical interconnect measured in a direction parallel with the specular reflection layer.

US Patent:

6700753, Mar 2, 2004

Filed:

Apr 12, 2001

Appl. No.:

09/835131

Inventors:

Eric W. Singleton - Greenfield MN
Kristin Joy Duxstad - Eden Prarie MN
Michael B. Hintz - Mahtomedi MN

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B 539

US Classification:

3603241, 36032411, 36032412

Abstract:

This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y O , HfO , MgO, Al O , NiO, Fe O , and Fe O. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.

US Patent:

6791805, Sep 14, 2004

Filed:

Apr 1, 2002

Appl. No.:

10/113079

Inventors:

Olle Gunnar Heinonen - Eden Prairie MN
Michael Seigler - Pittsburgh PA
Eric W. Singleton - Maple Plain MN

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B 539

US Classification:

36032411, 360314

Abstract:

A giant magnetoresistive (GMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode includes a ferromagnetic free layer, at least one synthetic antiferromagnet, at least one nonmagnetic spacer layer, and at least one antiferromagnetic pinning layer. The ferromagnetic free layer has a rotatable magnetic moment. The synthetic antiferromagnet includes a ferromagnetic reference layer having a fixed magnetic moment, a ferromagnetic pinned layer having a fixed magnetic moment, and a coupling layer positioned between the reference layer and the pinned layer, wherein the coupling layer is selected from the group consisting of Cu, Ag and CuAg. The nonmagnetic spacer layer is positioned between the free layer and the synthetic antiferromagnet. The antiferromagnetic pinning layer is positioned adjacent to the synthetic antiferromagnet.

US Patent:

6795279, Sep 21, 2004

Filed:

Jan 9, 2004

Appl. No.:

10/754317

Inventors:

Eric W. Singleton - Greenfield MN
Kristin Joy Duxstad - Eden Prairie MN
Michael B. Hintz - Mahtomedi MN

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B 539

US Classification:

36032411, 3603241, 36032412

Abstract:

This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y O , HfO , MgO, Al O , NiO, Fe O , and Fe O. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.

US Patent:

6818330, Nov 16, 2004

Filed:

Aug 24, 2001

Appl. No.:

09/939190

Inventors:

Alexander M. Shukh - Savage MN
Eric W. Singleton - Greenfield MN
Sakhrat Khizroev - Pittsburgh PA
Dmitri Litvinov - Pittsburgh PA

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B 566

US Classification:

428694TM, 428216, 428336, 428694 TS, 428900, 427131

Abstract:

A perpendicular magnetic recording medium with antiferromagnetic coupling in a soft magnetic underlayer. The soft magnetic underlayer includes a first magnetic soft layer, a first interface layer on the first magnetic soft layer, a second magnetic soft layer, a second interface layer on the second magnetic soft layer, and a non-magnetic coupling layer between the first interface layer and the second interface layer. The first and second magnetic soft layers are antiferromagnetically exchange coupled to one another through the non-magnetic coupling layer, wherein the first and second interface layers increase the exchange coupling between the first and second magnetic soft layers.

US Patent:

6930865, Aug 16, 2005

Filed:

Jan 21, 2003

Appl. No.:

10/348386

Inventors:

Mai Abdelhamid Ghaly - Bloomington MN, US
David James Larson - Northfield MN, US
Paul Edward Anderson - Eden Prairie MN, US
Kristin J. Duxstad - Eden Prairie MN, US
Brenda Anne Everitt - Minneapolis MN, US
Patrick John Moran - Bloomington MN, US
Steven Barclay Slade - Fort Collins CO, US
Eric Walter Singleton - Maple Plain MN, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B005/33

US Classification:

36032412

Abstract:

A transducing head has a magnetoresistive sensor, a first bias element, and a second bias element. The magnetoresistive sensor is positioned between the first and second bias elements, and has a sensor width. The first bias element has a first length and the second bias element has a second length. The direction of the first and second lengths are substantially similar to the direction of the sensor width. The first and second lengths in the range of about one-tenth to about twenty times the sensor width.

US Patent:

6954343, Oct 11, 2005

Filed:

May 8, 2002

Appl. No.:

10/142563

Inventors:

David J. Larson - Northfield MN, US
Eric W. Singleton - Greenfield MN, US
Mai A. Ghaly - Bloomington MN, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B005/39

US Classification:

36032412

Abstract:

A transducing head has a magnetoresistive sensor and a first and a second dual path conductor/magnet structure for providing current to the magnetoresistive sensor and for stabilizing the magnetoresistive sensor. The first and the second dual path conductor/magnet structures are arranged in an abutted-junction configuration on opposite sides of the magnetoresistive sensor. Each of the first and the second dual path conductor/magnet structures has at least one bias layer and at least one conductor layer. Each bias layer is formed upon a bias seed layer positioned over one of the conductor layers. Each bias seed layer is selected to result in the bias layer formed upon it having a coercivity between about 1 kOe and about 5 kOe and an in-plane remnant squareness greater than about 0. 8. Most preferably, each of the first and the second dual path conductor/magnet structures is formed of at least two conductor layers interspersed with at least one bias layer.