Eric Cheuk Wong

US Patent:

7446044, Nov 4, 2008

Filed:

Sep 19, 2006

Appl. No.:

11/523273

Inventors:

Anupama B. Kaul - Arcadia CA, US
Eric W. Wong - Los Angeles CA, US
Richard L. Baron - Verdugo City CA, US
Larry Epp - Pasadena CA, US

Assignee:

California Institute of Technology - Pasadena CA

International Classification:

B81B 7/02
H01L 21/44

US Classification:

438684, 438685, 438903, 438FOR 248, 257382, 257383, 977876, 977938, 333193

Abstract:

Switches having an in situ grown carbon nanotube as an element thereof, and methods of fabricating such switches. A carbon nanotube is grown in situ in mechanical connection with a conductive substrate, such as a heavily doped silicon wafer or an SOI wafer. The carbon nanotube is electrically connected at one location to a terminal. At another location of the carbon nanotube there is situated a pull electrode that can be used to elecrostatically displace the carbon nanotube so that it selectively makes contact with either the pull electrode or with a contact electrode. Connection to the pull electrode is sufficient to operate the device as a simple switch, while connection to a contact electrode is useful to operate the device in a manner analogous to a relay. In various embodiments, the devices disclosed are useful as at least switches for various signals, multi-state memory, computational devices, and multiplexers.

US Patent:

7547881, Jun 16, 2009

Filed:

Aug 28, 2006

Appl. No.:

11/512054

Inventors:

Brian D. Hunt - La Crescenta CA, US
Michael Bronikowski - Altadena CA, US
Eric W. Wong - Los Angeles CA, US
Paul von Allmen - Pasadena CA, US
Fabiano A. Oyafuso - Pasadena CA, US

Assignee:

California Institute of Technology - Pasadena CA

International Classification:

G01N 27/12

US Classification:

250305

Abstract:

Methods and devices for spectroscopic identification of molecules using nanoscale wires are disclosed. According to one of the methods, nanoscale wires are provided, electrons are injected into the nanoscale wire; and inelastic electron scattering is measured via excitation of low-lying vibrational energy levels of molecules bound to the nanoscale wire.

US Patent:

7850861, Dec 14, 2010

Filed:

Jun 18, 2007

Appl. No.:

11/764359

Inventors:

Eric W. Wong - Los Angeles CA, US

Assignee:

The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Washington DC

International Classification:

C23F 1/00

US Classification:

216 2, 216 37, 438 48, 438 53, 137 1501, 137 13

Abstract:

A method of making a microfluidic device is provided. The method features patterning a permeable wall on a substrate, and surrounding the permeable wall with a solid, non-permeable boundary structure to establish a microfluidic channel having a cross-sectional dimension less than 5,000 microns and a cross-sectional area at least partially filled with the permeable wall so that fluid flowing through the microfluidic channel at least partially passes through the permeable wall.

US Patent:

7960713, Jun 14, 2011

Filed:

Dec 30, 2008

Appl. No.:

12/346513

Inventors:

Brian Hunt - La Crescenta CA, US
James Hartman - San Diego CA, US
Michael J. Bronikowski - Tujunga CA, US
Eric Wong - Los Angeles CA, US
Brian Y. Lim - Simi Valley CA, US

Assignee:

Etamota Corporation - Pasadena CA

International Classification:

H01L 29/78

US Classification:

257 4, 257E45002, 365151, 365232

Abstract:

A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench.

US Patent:

20060261433, Nov 23, 2006

Filed:

May 23, 2006

Appl. No.:

11/439625

Inventors:

Harish Manohara - Arcadia CA, US
Brian Hunt - LaCrescenta CA, US
Erich Schlecht - Pasadena CA, US
Peter Siegel - LaCanada CA, US
Eric Wong - Los Angeles CA, US

International Classification:

H01L 21/00

US Classification:

257471000, 438092000

Abstract:

Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.

US Patent:

20080315181, Dec 25, 2008

Filed:

Feb 25, 2008

Appl. No.:

12/072320

Inventors:

Harish Manohara - Arcadia CA, US
Brian Hunt - LaCrescenta CA, US
Erich Schlecht - Pasadena CA, US
Peter Siegel - LaCanada CA, US
Eric Wong - Los Angeles CA, US

International Classification:

H01L 29/12
H01L 21/205

US Classification:

257 14, 438479, 257E2907, 257E21104

Abstract:

Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.

US Patent:

20110136304, Jun 9, 2011

Filed:

Jun 11, 2010

Appl. No.:

12/814254

Inventors:

Eric W. Wong - Los Angeles CA, US
Brian D. Hunt - La Crescenta CA, US
Rajay Kumar - Huntington Beach CA, US
Chao Li - Arcadia CA, US

Assignee:

ETAMOTA CORPORATION - Pasadena CA

International Classification:

H01L 21/338
B82Y 40/00

US Classification:

438167, 977742, 257E2145

Abstract:

Techniques are used to fabricate carbon nanotube devices. These techniques improve the selective removal of undesirable nanotubes such as metallic carbon nanotubes while leaving desirable nanotubes such as semiconducting carbon nanotubes. In a first technique, slot patterning is used to slice or break carbon nanotubes have a greater length than desired. By altering the width and spacing of the slotting, nanotubes have a certain length or greater can be removed. Once the lengths of nanotubes are confined to a certain or expected range, the electrical breakdown approach of removing nanotubes is more effective. In a second technique, a Schottky barrier is created at one electrode (e.g., drain or source). This Schottky barrier helps prevent the inadvertent removal the desirable nanotubes when using the electrical breakdown approach. The first and second techniques can be used individually or in combination with each other.

US Patent:

20120138902, Jun 7, 2012

Filed:

Jun 3, 2011

Appl. No.:

13/153277

Inventors:

Brian Hunt - La Crescenta CA, US
James Hartman - San Diego CA, US
Michael J. Bronikowski - Tujunga CA, US
Eric Wong - Los Angeles CA, US
Brian Y. Lim - Simi Valley CA, US

Assignee:

ETAMOTA CORPORATION - Pasadena CA

International Classification:

H01L 29/78
H01L 29/06

US Classification:

257 29, 257E29022, 257E29255

Abstract:

A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench.