Erik A Puttlitz

US Patent:

6664023, Dec 16, 2003

Filed:

Mar 13, 2001

Appl. No.:

09/805753

Inventors:

Laird MacDowell - Jeffersonville VT
Erik Puttlitz - Colchester VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7004

US Classification:

4302701, 430269, 4302801, 430326, 430327

Abstract:

A method for the controlled aging of a photoresist which provides an aged photoresist that has a targeted photospeed which is faster than a conventional unaged photoresist is provided. Specifically, the inventive method includes the step of aging a solution containing at least a photoresist resin composition at a temperature below the thermal decomposition of the photoresist resin composition, but not below 20Â C. , for a time period that is effective in achieving a targeted photospeed which is faster than a photospeed of an unaged photoresist.

US Patent:

62073338, Mar 27, 2001

Filed:

Jul 29, 1999

Appl. No.:

9/363862

Inventors:

William J. Adair - Jericho VT
James J. Colelli - Jericho VT
Erik A. Puttlitz - Colchester VT
Timothy J. Toth - Essex Junction VT
Arthur C. Winslow - Essex Junction VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F9/00

US Classification:

430 51

Abstract:

A method of fabricating an attenuating phase shift photolithographic mask which will reduce the formation of side-lobes adjacent to large structures in the kerf regions on the patterned wafer. These structures are typically much larger in size than device nominal, and this method may be applied to either one axis or both axes of the kerf structure depending on it's susceptibility to form side-lobes. A substantially defect free optical lithography mask having partially transmissive attenuating phase-shift regions, transmissive clear regions, and more opaque than partially transmissive regions is fabricated by first depositing an attenuating phase-shifting layer on the top surface of a transmissive substrate followed by deposition of a more opaque than partially transmissive layer on top of the partially transmissive attenuating phase-shifting layer. Next an image transfer layer is deposited on top of the more opaque than partially transmissive layer. A first photolithographic step is performed in order to pattern the image transfer layer.