Eugene B Recla

US Patent:

43717071, Feb 1, 1983

Filed:

Dec 15, 1980

Appl. No.:

6/216045

Inventors:

Richard E. Eibeck - Orchard Park NY
Martin A. Robinson - East Amherst NY
Francis E. Evans - Hamburg NY
Eugene B. Recla - Hamburg NY

Assignee:

Allied Corporation - Morris Township, Morris County NJ

International Classification:

C07F 502

US Classification:

568 6

Abstract:

A process for the conversion of boron trifluoride dimethyl ether complex to boron trifluoride dialkyl ether complex substantially free of dimethyl ether impurities, which comprises reacting the boron trifluoride-dimethyl ether complex, in the liquid phase, in the presence of dialkyl ether wherein at least one of the alkyl groups contains at least two carbon atoms, in a restricted vapor equilibration region, while simultaneously sweeping the said vapor equilibration region with a substantially inert gas, and heating to distill off the dimethyl ether. High purity of the boron trifluoride dialkyl ether complex is attained with this method, with only minimal traces of the boron trifluoride dimethyl ether complex, dimethyl ether remaining. The preferred product is boron trifluoride diethyl ether.

US Patent:

43754538, Mar 1, 1983

Filed:

Dec 28, 1981

Appl. No.:

6/334719

Inventors:

David Nalewajek - West Seneca NY
Eugene B. Recla - Hamburg NY
Robert A. Wiles - Hamburg NY
Richard E. Eibeck - Orchard Park NY

Assignee:

Allied Corporation - Morris Township, Morris County NJ

International Classification:

C01G 1500
C01F 1700

US Classification:

423 211

Abstract:

Gd. sub. 2 O. sub. 3 and Ga. sub. 2 O. sub. 3 are currently used for the fabrication of Gd. sub. 3 Ga. sub. 5 O. sub. 12 (GGG) wafers which are employed as substrates for bubble domain memory devices. In the processing, in the order of 25% of the starting material ends up as process "saw kerf" contaminated with variable amounts of iron, nickel, magnesium, aluminum, zirconium, iridium and silicon. A process is described whereby the "saw kerf" can be reprocessed in sufficient purity to be re-used in the process, thereby improving the economics of production of GGG wafers significantly. Gadolinium and gallium oxides are recovered and separated from transition metal impurities introduced during fabrication of GGG wafers. The process "saw kerf" produced from slicing the crystal boule is dissolved in HCl, treated with H. sub. 2 SO. sub. 4, and the resulting sulfates separated.