Fei F Han

US Patent:

6890850, May 10, 2005

Filed:

Jul 15, 2002

Appl. No.:

10/196498

Inventors:

Ping Xu - Fremont CA, US
Shankar Venkataraman - Santa Clara CA, US
Li-Qun Xia - Santa Clara CA, US
Fei Han - San Jose CA, US
Ellie Yieh - San Jose CA, US
Srinivas D. Nemani - San Jose CA, US
Kangsub Yim - Mountain View CA, US
Farhad K. Moghadam - Saratoga CA, US
Ashok K. Sinha - Palo Alto CA, US
Yi Zheng - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L021/4763
H01L021/31
H01L021/469

US Classification:

438631, 438634, 438638, 438789

Abstract:

Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

US Patent:

7151053, Dec 19, 2006

Filed:

Apr 28, 2005

Appl. No.:

11/118678

Inventors:

Ping Xu - Fremont CA, US
Shankar Venkataraman - Santa Clara CA, US
Li-Qun Xia - Santa Clara CA, US
Fei Han - San Jose CA, US
Ellie Yieh - San Jose CA, US
Srinivas D. Nemani - San Jose CA, US
Kangsub Yim - Mountain View CA, US
Farhad K. Moghadam - Saratoga CA, US
Ashok K. Sinha - Palo Alto CA, US
Yi Zheng - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/4763
H01L 21/31
H01L 21/469

US Classification:

438631, 438634, 438638, 438789

Abstract:

Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

US Patent:

20200333415, Oct 22, 2020

Filed:

Apr 16, 2019

Appl. No.:

16/385374

Inventors:

- Erlangen, DE
Xiaoming Bi - Oak Park CA, US
Fei Han - Beverly Hills CA, US

International Classification:

G01R 33/56
G01R 33/563

Abstract:

An imaging system includes determination of a first gradient-modulated offset-independent adiabaticity pulse associated with a first bandwidth and a first gradient strength, determination of a second gradient-modulated offset-independent adiabaticity pulse associated with a second bandwidth less than the first bandwidth and a second gradient strength less than the first gradient strength, determination of a third asymmetric adiabatic pulse based on the first gradient-modulated offset-independent adiabaticity pulse and the second gradient-modulated offset-independent adiabaticity pulse, and control of a radio frequency system and gradient system to apply the third asymmetric adiabatic pulse to patient tissue.

US Patent:

20170273578, Sep 28, 2017

Filed:

Nov 8, 2016

Appl. No.:

15/346036

Inventors:

- Oakland CA, US
Peng Hu - Beverly Hills CA, US
Fei Han - Los Angeles CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

International Classification:

A61B 5/026
A61B 5/0402
A61B 5/113
A61K 49/18
A61M 16/00
G01R 33/56
G01R 33/563
G01R 33/567
A61B 5/00
A61M 5/00

Abstract:

3D cine MR angiography systems and methods are disclosed for use during the steady state intravascular distribution phase of ferumoxytol. The 3D cine MRA technique enables improved delineation of cardiac anatomy in pediatric patients undergoing cardiovascular MRI.

US Patent:

20150374237, Dec 31, 2015

Filed:

Jan 30, 2014

Appl. No.:

14/764972

Inventors:

- Oakland CA, US
Fei HAN - Los Angeles CA, US
Stanislas RAPACCHI - Los Angeles CA, US

International Classification:

A61B 5/00
A61B 5/055

Abstract:

Self-gating methods and Systems are provided for cardiac imaging analysis. In particular, non-phased coded self-gating data are collected separately from imaging data. The method uses multiple coil arrays to repeatedly acquire self-gating signals that are separate from image acquisitions. Learning-based algorithms are used in data processing to detect a triggering event, such as the onset of a heartbeat.