Fei Han

US Patent:

6890850, May 10, 2005

Filed:

Jul 15, 2002

Appl. No.:

10/196498

Inventors:

Ping Xu - Fremont CA, US
Shankar Venkataraman - Santa Clara CA, US
Li-Qun Xia - Santa Clara CA, US
Fei Han - San Jose CA, US
Ellie Yieh - San Jose CA, US
Srinivas D. Nemani - San Jose CA, US
Kangsub Yim - Mountain View CA, US
Farhad K. Moghadam - Saratoga CA, US
Ashok K. Sinha - Palo Alto CA, US
Yi Zheng - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L021/4763
H01L021/31
H01L021/469

US Classification:

438631, 438634, 438638, 438789

Abstract:

Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

US Patent:

7151053, Dec 19, 2006

Filed:

Apr 28, 2005

Appl. No.:

11/118678

Inventors:

Ping Xu - Fremont CA, US
Shankar Venkataraman - Santa Clara CA, US
Li-Qun Xia - Santa Clara CA, US
Fei Han - San Jose CA, US
Ellie Yieh - San Jose CA, US
Srinivas D. Nemani - San Jose CA, US
Kangsub Yim - Mountain View CA, US
Farhad K. Moghadam - Saratoga CA, US
Ashok K. Sinha - Palo Alto CA, US
Yi Zheng - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/4763
H01L 21/31
H01L 21/469

US Classification:

438631, 438634, 438638, 438789

Abstract:

Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

US Patent:

20210087282, Mar 25, 2021

Filed:

Sep 24, 2020

Appl. No.:

17/030421

Inventors:

- Ingelheim am Rhein, DE
Pankaj GUPTA - Scarsdale NY, US
Fei HAN - Sandy Hook CT, US
Yining HUANG - Danbury CT, US
Sarah LOW - Carmel NY, US
Juergen PRESTLE - Biberach an der Riss, DE
Leo THOMAS - Biberach an der Riss, DE

International Classification:

C07K 16/28
A61K 9/00
C12N 15/63
A61P 27/02

Abstract:

Disclosed are antibodies and fragments thereof that target the A-domain of Neuropilin-1 (Nrp1A). Also disclosed are methods of using the anti-Nrp1A antibodies for the treatment of various diseases or disorders.