Fei Han from 2386 Lagoon Ct, San Leandro, CA 94579, age 44

Isbn (Books And Publications)

Han Feizi: Basic Writings

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Author
Fei Han

ISBN #
0231129696

Resumes

Manager At Pricewaterhousecoopers

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Position:

Experienced Manager at PricewaterhouseCoopers

Location:

San Francisco Bay Area

Industry:

Financial Services

Work:

PricewaterhouseCoopers - San Jose, California since Aug 2004
Experienced Manager
Apple 2013 - 2013
GFSS finance operation manager
WellPoint - Greater Los Angeles Area Jan 2004 - Jul 2004
Actuary Analyst

Education:

University of California, Berkeley 2000 - 2004
Bachelor, Applied Mathematics, Business Administriation

Languages:

English
Chinese

Certifications:

Certified Public Accountant, California Board of Accountancy

Fei Han

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Student At University Of California, Berkeley

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Location:

San Francisco Bay Area

Industry:

Oil & Energy

Work:

Asian Development Bank Jun 2010 - Aug 2010
Intern

Education:

University of California, Berkeley 2007 - 2012
Peking University 2005 - 2007
MA, Finance Peking University 2001 - 2005
BA, Finance

Bear At The Bears

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Position:

Bear at The Bears

Location:

San Francisco Bay Area

Industry:

Animation

Work:

The Bears
Bear

Fei Han San Francisco, CA

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Work:

Process Sciences

Jan 2013 to 2000
Scientist II Process Sciences
San Francisco, CA
Feb 2011 to Jan 2013
Scientist I Northwestern University
Chicago, IL
Feb 2008 to Jan 2011
Postdoctoral Research Fellow Northwestern University
Chicago, IL
Aug 2002 to Jan 2008
Ph.D. Candidate

Education:

Loyola University Chicago
2002 to 2008
Ph.D. in Cell and Molecular Physiology Peking University
1998 to 2002
B.S. in Physiology and Biophysics

Us Patents

Method Of Depositing Dielectric Materials In Damascene Applications
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US Patent:

6890850, May 10, 2005
Filed:

Jul 15, 2002
Appl. No.:

10/196498
Inventors:

Ping Xu - Fremont CA, US
Shankar Venkataraman - Santa Clara CA, US
Li-Qun Xia - Santa Clara CA, US
Fei Han - San Jose CA, US
Ellie Yieh - San Jose CA, US
Srinivas D. Nemani - San Jose CA, US
Kangsub Yim - Mountain View CA, US
Farhad K. Moghadam - Saratoga CA, US
Ashok K. Sinha - Palo Alto CA, US
Yi Zheng - San Jose CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H01L021/4763
H01L021/31
H01L021/469
US Classification:

438631, 438634, 438638, 438789
Abstract:

Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

Method Of Depositing Dielectric Materials Including Oxygen-Doped Silicon Carbide In Damascene Applications
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US Patent:

7151053, Dec 19, 2006
Filed:

Apr 28, 2005
Appl. No.:

11/118678
Inventors:

Ping Xu - Fremont CA, US
Shankar Venkataraman - Santa Clara CA, US
Li-Qun Xia - Santa Clara CA, US
Fei Han - San Jose CA, US
Ellie Yieh - San Jose CA, US
Srinivas D. Nemani - San Jose CA, US
Kangsub Yim - Mountain View CA, US
Farhad K. Moghadam - Saratoga CA, US
Ashok K. Sinha - Palo Alto CA, US
Yi Zheng - San Jose CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H01L 21/4763
H01L 21/31
H01L 21/469
US Classification:

438631, 438634, 438638, 438789
Abstract:

Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.