Feng Chen

US Patent:

6853578, Feb 8, 2005

Filed:

Mar 18, 2002

Appl. No.:

10/101075

Inventors:

Wei Zhang - Sunnyvale CA, US
Feng Chen - Fremont CA, US
Jianbin Wu - Fremont CA, US

Assignee:

Piconetics, Inc. - Fremont CA

International Classification:

G11C007/00

US Classification:

365154, 365188, 365174, 36518901, 36518903

Abstract:

A single bit line, pulse-operated memory cell. The memory cell includes a first and second inverter, write access and feedback-control transistors, and read access transistor and read buffer transistors. The output of the first inverter is connected to the input of the second inverter and the output of the second inverter is connected to the input of the first inverter through the channel of the feedback-control transistor. The write access and feedback-control transistors are opposite types, and their gates are connected together so that when the feedback control transistor is on the write-access transistor is off and visa versa. Writing the cell thus avoids contending the with the on-transistor of the second inverter. The output of the cell is sensed by the gate of the buffer transistor and coupling the output of the buffer transistor through the read access transistor to the read output line.

US Patent:

7323439, Jan 29, 2008

Filed:

Sep 19, 2001

Appl. No.:

09/960708

Inventors:

Gerald R. Crabtree - Woodside CA, US
Isabella Graef - Woodside CA, US
Feng Chen - Palo Alto CA, US

Assignee:

The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA

International Classification:

A61K 31/00
A61K 31/70
C12N 5/00

US Classification:

514 1, 514 2, 435 6, 435 71, 435377

Abstract:

Methods and compositions for modulating angiogenesis in a host are provided. In the subject methods, an effective amount of Ca/calcineurin/NF-ATc signaling pathway modulatory agent is administered to the host. In many embodiments, the Ca/calcineurin/NF-ATc signaling pathway modulatory agent is an NF-ATc antagonist, e. g. , in those embodiments of inhibiting angiogenesis. The subject methods find use in a variety of different applications, including the inhibition of tumor growth and the treatment of disease conditions characterized by tumor presence. Also provided are methods of screening for agents that inhibit angiogenesis by modulating the Ca/calcineurin/NF-ATc signaling pathway.

US Patent:

7772114, Aug 10, 2010

Filed:

Dec 5, 2007

Appl. No.:

11/951236

Inventors:

Lana Hiului Chan - Santa Clara CA, US
Feng Chen - Milpitas CA, US
Karl B. Levy - Los Altos CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/443

US Classification:

438656, 438680, 438685, 257E21168

Abstract:

Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.

US Patent:

8058170, Nov 15, 2011

Filed:

Mar 19, 2009

Appl. No.:

12/407541

Inventors:

Anand Chandrashekar - Sunnyvale CA, US
Mirko Glass - Freital, DE
Raashina Humayun - Fremont CA, US
Michael Danek - Cupertino CA, US
Kaihan Ashtiani - Cupertino CA, US
Feng Chen - Sunnyvale CA, US
Lana Hiului Chan - Northborough MA, US
Anil Mane - Sunnyvale CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/44

US Classification:

438677, 438685, 257E21575

Abstract:

Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

US Patent:

8143911, Mar 27, 2012

Filed:

Mar 31, 2008

Appl. No.:

12/060251

Inventors:

Zuoguo Wu - Santa Clara CA, US
Feng Chen - Portland OR, US
Sanjay Dabral - Palo Alto CA, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H03K 17/16
H03K 19/003
H03K 19/0175

US Classification:

326 21, 326 82

Abstract:

In general, in one aspect, the disclosure describes an apparatus having an averager to receive differential output voltages of a transmitter and generate an average transmitter output voltage. A comparator is to compare the average transmitter output voltage to a reference voltage and generate a difference therebetween. An integrator is to integrate the difference between the average transmitter output voltage and the reference voltage over time. The integrated difference is fed back to the transmitter to bias the transmitter.

US Patent:

8409987, Apr 2, 2013

Filed:

Sep 23, 2011

Appl. No.:

13/244016

Inventors:

Anand Chandrashekar - Sunnyvale CA, US
Mirko Glass - Freital, DE
Raashina Humayun - Fremont CA, US
Michal Danek - Cupertino CA, US
Kaihan Ashtiani - Cupertino CA, US
Feng Chen - Sunnyvale CA, US
Lana Hiului Chan - Northborough MA, US
Anil Mane - Sunnyvale CA, US

Assignee:

Novellus Systems, Inc. - Fremont CA

International Classification:

H01L 21/44

US Classification:

438677, 257E21575

Abstract:

Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

US Patent:

8551885, Oct 8, 2013

Filed:

Aug 29, 2008

Appl. No.:

12/202126

Inventors:

Feng Chen - Milpitas CA, US
Raashina Humayun - Fremont CA, US
Abhishek Manohar - Santa Clara CA, US

Assignee:

Novellus Systems, Inc. - Fremont CA

International Classification:

H01L 21/285

US Classification:

438680, 118715

Abstract:

Methods of producing low resistivity tungsten bulk layers having lower roughness and higher reflectivity are provided. The smooth and highly reflective tungsten layers are easier to photopattern than conventional low resistivity tungsten films. The methods involve CVD deposition of tungsten in the presence of alternating nitrogen gas pulses, such that alternating portions of the film are deposited by CVD in the absence of nitrogen and in the presence of nitrogen. According to various embodiments, between 20-90% of the total film thickness is deposited by CVD in the presence of nitrogen.

US Patent:

8623733, Jan 7, 2014

Filed:

Apr 6, 2010

Appl. No.:

12/755259

Inventors:

Feng Chen - Milpitas CA, US
Raashina Humayun - Fremont CA, US
Michal Danek - Cupertino CA, US
Anand Chandrashekar - Sunnyvale CA, US

Assignee:

Novellus Systems, Inc. - Fremont CA

International Classification:

H01L 21/20

US Classification:

438380, 118719, 257E21295

Abstract:

Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350 C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process.