Francis L Morris

US Patent:

8343806, Jan 1, 2013

Filed:

Mar 5, 2009

Appl. No.:

12/398235

Inventors:

Premjeet Chahal - Gurnee IL, US
Francis J. Morris - Dallas TX, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 21/00
H01L 21/20

US Classification:

438115, 438125, 438126, 438127, 438393

Abstract:

A method for forming an integrated circuit includes transforming at least a portion of a first substrate layer to form a conductive region within the first substrate layer. An integrated circuit device is provided proximate an outer surface of the first substrate layer. The integrated circuit device transmits or receives electrical signals through the conductive region. A second substrate layer is disposed proximate to the outer surface of the first substrate layer to enclose the integrated circuit device in a hermetic environment.