Francisco Javier Leon

Address:

2137 Park Paxton Ct, Los Banos, CA 93635

VIN:

1J4GK58K37W585315

Make:

JEEP

Model:

LIBERTY

Year:

2007

US Patent:

7151881, Dec 19, 2006

Filed:

May 28, 2004

Appl. No.:

10/856127

Inventors:

Lawrence C. West - San Jose CA, US
Thomas P. Pearsall - Paris, FR
Francisco A. Leon - Palo Alto CA, US
Stephen Moffatt - Jersey, GB

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G02B 6/10

US Classification:

385129, 385 40, 385 14, 372 64

Abstract:

An optical circuit including a semiconductor substrate; an optical waveguide formed in or on the substrate; and an optical detector formed in or on the semiconductor substrate, wherein the optical detector is aligned with the optical waveguide so as to receive an optical signal from the optical waveguide during operation, and wherein the optical detector has: a first electrode; a second electrode; and an intermediate layer between the first and second electrodes, the intermediate layer being made of a semiconductor material characterized by a conduction band, a valence band, and deep level energy states introduced between the conduction and valence bands.

US Patent:

7760980, Jul 20, 2010

Filed:

Aug 31, 2006

Appl. No.:

11/514291

Inventors:

Lawrence C. West - San Jose CA, US
Gregory L. Wojcik - Ben Lomond CA, US
Francisco A. Leon - Palo Alto CA, US
Yonah Cho - Sunnyvale CA, US
Andreas Goebel - Mountain View CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G02B 6/10
G02B 6/13

US Classification:

385129, 385 14

Abstract:

A method of fabricating on a substrate an optical detector in an optical waveguide, the method involving: forming at least one layer on a surface of the substrate, said at least one layer comprising SiGe; implanting an impurity into the at least one layer over a first area to form a detector region for the optical detector; etching into the at least one layer in a first region and a second region to form a ridge between the first and second regions, said ridge defining the optical detector and the optical waveguide; filling the first and second regions with a dielectric material having a lower refractive index than SiGe; and after filling the first and second regions with the dielectric material, removing surface material to form a planarized upper surface.

US Patent:

20050214964, Sep 29, 2005

Filed:

Oct 6, 2004

Appl. No.:

10/959599

Inventors:

Lawrence West - San Jose CA, US
Francisco Leon - Palo Alto CA, US

Assignee:

Applied Materials, Inc. PATENT COUNSEL, Legal Affairs Dept. - Santa Clara CA

International Classification:

H01L021/00
H01L031/109
H01L031/072
H01L031/0336
H01L031/0328
H01L029/739

US Classification:

438031000

Abstract:

An optical detector including a substrate; an island of detector material formed on the substrate, the island being a stack extending up from the substrate of alternating layers of first and second semiconductor materials, the island having a horizontally oriented top end, a vertically oriented first sidewall, and vertically oriented second sidewall that is opposite the first sidewall, the island having a first doped region extending into the island through first sidewall and forming a first conductive region that extends down into the island of detector material, the island also having a second doped region extending into the island through the second sidewall and forming a second conductive region that extends down into island of the detector material, the first and second conductive regions each having a top end that is part of the top end of the island; a first electrical connection to the top end of the first conductive region; and a second electrical connection to the top end of the second conductive region.

US Patent:

20080029757, Feb 7, 2008

Filed:

Nov 14, 2006

Appl. No.:

11/599197

Inventors:

Lawrence West - San Jose CA, US
Francisco Leon - Palo Alto CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 29/06

US Classification:

257014000, 257E29005

Abstract:

A semiconductor device including: a quantum well having photon emission energy level, the quantum well having at least one active layer and two barrier layers, one disposed above the active layer and one disposed below the active layer; and injection regions for injecting electrons into the quantum well, wherein the electrons are cool electrons with respect to the active layer of the quantum well.

US Patent:

20200097980, Mar 26, 2020

Filed:

Sep 25, 2018

Appl. No.:

16/141521

Inventors:

- McLean VA, US
Volodymyr ORLOV - San Jose CA, US
Yazdan SHIRVANY - Great Falls VA, US
Fernando SAN MARTIN JORQUERA - Los Altos CA, US
Francisco PEREZ LEON - Richmond CA, US
Mohammad SHAMI - Foster City CA, US

Assignee:

Capital One Services, LLC - McLean VA

International Classification:

G06Q 30/00
G06Q 30/02
G06F 15/18
H04L 29/08
H04M 3/51

Abstract:

Systems and methods for customizing business applications based upon user intent scores is described. A machine learning model trained to specifically predict when a user is likely to engage in a specific activity while interacting with the business application may be trained using data regarding prior interactions between a business application and a plurality of users. The machine learning model may thereafter provide a probability score for a particular user, the probability score indicating the likelihood that the user will engage in the specific activity for which the model has been trained to predict. The probability may be combined with a business value factor to produce a user intent score indicating the relative value of the user engaging in the specific activity. A business application comprising an app executing on a client device, a webpage, an automated menu at a call-in service center, or human operator interacting with the user at a call in the service center may be customized for the particular user based upon the user intent scores.