Francisco J Martin

US Patent:

7025659, Apr 11, 2006

Filed:

Jan 14, 2002

Appl. No.:

10/047210

Inventors:

Florence Eschbach - Portolla Valley CA, US
Eric James Lee - San Jose CA, US
Peter Beverley Powell Phipps - Saratoga CA, US
Amanda Baer - Campbell CA, US
Edward Hin Pong Lee - San Jose CA, US
Francisco Martin - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

B24B 1/00
G11B 5/127

US Classification:

451 41, 2960316

Abstract:

A method for simultaneously planarizing to relatively equal smoothness a thin film magnetic head hardbaked resist structure having relatively low surface energy and one or more additional thin film magnetic head structures containing other materials having comparatively higher surface energy, such as copper, hardbaked resist, alumina and NiFe. The method begins with preparation of a chemical mechanical polishing (CMP) slurry targeted at equaling the removal rate of the materials to be planarized. The CMP slurry includes a liquid vehicle, an abrasive, and a surfactant. The CMP slurry is applied to the surface of the structures to be planarized and the structures are simultaneously planarized using a CMP planarization technique.

US Patent:

7201637, Apr 10, 2007

Filed:

Dec 20, 2005

Appl. No.:

11/313070

Inventors:

Florence Eschbach - Portolla Valley CA, US
Eric James Lee - San Jose CA, US
Peter Beverley Powell Phipps - Saratoga CA, US
Amanda Baer - Campbell CA, US
Edward Hin Pong Lee - San Jose CA, US
Francisco Martin - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

B24B 1/00
G11B 5/127

US Classification:

451 28, 360313, 2960316

Abstract:

A method for simultaneously planarizing to relatively equal smoothness a thin film magnetic head hardbaked resist structure having relatively low surface energy and one or more additional thin film magnetic head structures containing other materials having comparatively higher surface energy, such as copper, hardbaked resist, alumina and NiFe. The method begins with preparation of a chemical mechanical polishing (CMP) slurry targeted at equaling the removal rate of the materials to be planarized. The CMP slurry includes a liquid vehicle, an abrasive, and a surfactant. The CMP slurry is applied to the surface of the structures to be planarized and the structures are simultaneously planarized using a CMP planarization technique.

US Patent:

61312711, Oct 17, 2000

Filed:

Jun 25, 1999

Appl. No.:

9/344071

Inventors:

Robert Edward Fontana - San Jose CA
Hung-Chin Guthrie - Saratoga CA
William Leslie Guthrie - Saratoga CA
Eric James Lee - San Jose CA
Li-Chung Lee - Saratoga CA
Francisco Agustin Martin - Santa Clara CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11B 542

US Classification:

2960314

Abstract:

A method planarizes a first pole piece layer of a write head by lapping without delaminating the first pole piece layer from an underlying second read gap layer on a wafer substrate. This is accomplished by separating or dicing the first pole piece material layer in a field region about rows and columns of first pole piece layers of magnetic head assemblies so as to reduce the stress of the first pole piece material layer in the field. Accordingly, when the wafer substrate is lapped, such as by chemical mechanical polishing (CMP), a reduced stress prevents the first pole piece material layer from delaminating from the second read gap layer during the lapping operation.