Frank Lin

US Patent:

6514378, Feb 4, 2003

Filed:

Mar 31, 2000

Appl. No.:

09/540549

Inventors:

Tuqiang Ni - Fremont CA
Kenji Takeshita - Fremont CA
Tom Choi - San Jose CA
Frank Y. Lin - Fremont CA
Wenli Collison - Fremont CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H05H 100

US Classification:

15634551, 1563453, 15634524, 15634548, 118728, 118723 I, 438710

Abstract:

An apparatus and method for consecutively processing a series of semiconductor substrates with minimal plasma etch rate variation following cleaning with fluorine-containing gas and/or seasoning of the plasma etch chamber. The method includes steps of (a) placing a semiconductor substrate on a substrate support in a plasma etching chamber, (b) maintaining a vacuum in the chamber, (c) etching an exposed surface of the substrate by supplying an etching gas to the chamber and energizing the etching gas to form a plasma in the chamber, (d) removing the substrate from the chamber; and (e) consecutively etching additional substrates in the chamber by repeating steps (a-d), the etching step being carried out by minimizing a recombination rate of H and Br on a silicon carbide edge ring surrounding the substrate at a rate sufficient to offset a rate at which Br is consumed across the substrate. The method can be carried out using pure HBr or combination of HBr with other gases.

US Patent:

6531029, Mar 11, 2003

Filed:

Jun 30, 2000

Appl. No.:

09/607326

Inventors:

Tuqiang Ni - Fremont CA
Kenji Takeshita - Fremont CA
Tom Choi - San Jose CA
Frank Y. Lin - Fremont CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 213065

US Classification:

15634548, 118723 I, 118723 R, 21912152

Abstract:

200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic; fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r. f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

US Patent:

6617257, Sep 9, 2003

Filed:

Mar 30, 2001

Appl. No.:

09/820737

Inventors:

Tuqiang Ni - Fremont CA
Weinan Jiang - San Jose CA
Conan Chiang - Los Altos CA
Frank Y. Lin - Fremont CA
Chris Lee - Kensington CA
Dai N. Lee - Fremont CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21302

US Classification:

438725, 438714, 438710, 438700

Abstract:

A semiconductor manufacturing process wherein an organic antireflective coating is etched with an O -free sulfur containing gas which provides selectivity with respect to an underlying layer and/or minimizes the lateral etch rate of an overlying photoresist to maintain critical dimensions defined by the photoresist. The etchant gas can include SO and a carrier gas such as Ar or He and optional additions of other gases such as HBr. The process is useful for etching 0. 25 micron and smaller contact or via openings in forming structures such as damascene structures.

US Patent:

6897156, May 24, 2005

Filed:

Jan 21, 2003

Appl. No.:

10/347363

Inventors:

Tuqiang Ni - Fremont CA, US
Kenji Takeshita - Fremont CA, US
Tom Choi - San Jose CA, US
Frank Y. Lin - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L021/302

US Classification:

438706, 438707, 438710, 438712, 438714, 438729

Abstract:

200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r. f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

US Patent:

7186661, Mar 6, 2007

Filed:

Jun 27, 2003

Appl. No.:

10/607612

Inventors:

Helene Del Puppo - Fremont CA, US
Frank Lin - Fremont CA, US
Chris Lee - Oakland CA, US
Vahid Vahedi - Albany CA, US
Thomas A. Kamp - San Jose CA, US
Alan J. Miller - Moraga CA, US
Saurabh Ullal - South San Francisco CA, US
Harmeet Singh - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/302

US Classification:

438713, 438719, 438743

Abstract:

A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.

US Patent:

7407597, Aug 5, 2008

Filed:

Sep 14, 2006

Appl. No.:

11/521810

Inventors:

Gowri Kota - Fremont CA, US
Frank Y. Lin - Fremont CA, US
Qinghua Zhong - Fremont CA, US

Assignee:

LAM Research Corporation - Fremont CA

International Classification:

B44C 1/22

US Classification:

216 37, 216 41, 438694, 438723

Abstract:

A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with at least one photoresist line having a pair of sidewalls ending at a line end. A coating is placed over the photoresist line comprising at least one cycle of depositing a polymer layer over the photoresist line, wherein an amount of polymer at the line end is greater than an amount of polymer on the sidewalls, and hardening the polymer layer. Features are etched into the etch layer through the photoresist mask, wherein a line end shortening (LES) is less than or equal to 1.

US Patent:

7491343, Feb 17, 2009

Filed:

Jan 10, 2007

Appl. No.:

11/621902

Inventors:

Yoko Yamaguchi Adams - Fremont CA, US
Gowri Kota - Fremont CA, US
Frank Y. Lin - Fremont CA, US
Qinghua Zhong - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B44C 1/22

US Classification:

216 37, 216 41, 438694, 438723

Abstract:

A method for etching features in an etch layer is provided. A patterned photoresist mask is provided over the etch layer, the photoresist mask having at least one photoresist line having a pair of sidewalls ending at a line end is provided. A polymer layer is placed over the at least one photoresist line, wherein a thickness of the polymer layer at the line end of the photoresist line is greater than a thickness of the polymer layer on the sidewalls of the photoresist line. Features are etched into the etch layer through the photoresist mask, wherein a line end shortening (LES) ratio is less than or equal to 1.

US Patent:

7682980, Mar 23, 2010

Filed:

Jan 25, 2007

Appl. No.:

11/627016

Inventors:

Helene Del Puppo - Fremont CA, US
Frank Lin - Fremont CA, US
Chris Lee - Oakland CA, US
Vahid Vahedi - Albany CA, US
Thomas A. Kamp - San Jose CA, US
Alan J. Miller - Moraga CA, US
Saurabh Ullal - South San Francisco CA, US
Harmeet Singh - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/302

US Classification:

438710, 438713, 438719, 438723

Abstract:

A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.