Fred F Sun

US Patent:

7021993, Apr 4, 2006

Filed:

Jul 19, 2002

Appl. No.:

10/198841

Inventors:

Jian Zhang - Aurora IL, US
Fred Sun - Naperville IL, US
Shumin Wang - Naperville IL, US
Isaac K. Cherian - Aurora IL, US
Eric H. Klingenberg - Emmaus PA, US

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

B24B 1/00

US Classification:

451 41, 1566361, 51308, 438 5

Abstract:

The invention provides a method of polishing a substrate comprising (i) contacting a substrate with a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about 10S/cm to about 10S/cm, and (c) a liquid carrier, and (ii) abrading or removing at least a portion of the substrate to polish the substrate.

US Patent:

7044836, May 16, 2006

Filed:

Apr 21, 2003

Appl. No.:

10/419580

Inventors:

Fred F. Sun - Naperville IL, US
Bin Lu - Naperville IL, US
Ethan K. Lightle - Lostant IL, US
Shumin Wang - Naperville IL, US

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

B24B 1/00

US Classification:

451 41, 451 60, 451287, 451288, 451446, 51307, 51308, 51309

Abstract:

The invention provides a method of polishing a substrate, which method comprises the steps of (i) providing a polishing composition, (ii) providing a substrate comprising at least one metal layer, and (iii) abrading at least a portion of the metal layer with the polishing composition to polish the substrate. The polishing composition comprises an abrasive and a liquid carrier, wherein the abrasive comprises metal oxide particles having a surface with a silane compound adhered to a portion thereof and a polymer adhered to the silane compound and wherein the polymer is selected from the group consisting of water-soluble polymers and water-emulsifiable polymers. The invention also provides a polishing composition as described above, wherein the total amount of abrasive particles present in the polishing composition is no greater than about 20% by weight of the polishing composition, and the metal oxide particles do not comprise zirconia.

US Patent:

7255810, Aug 14, 2007

Filed:

Jan 9, 2004

Appl. No.:

10/755154

Inventors:

Kevin J. Moeggenborg - Naperville IL, US
Fred F. Sun - Naperville IL, US

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

C09K 13/00
C09K 13/06
H01L 21/302

US Classification:

252 791, 252 794, 438692

Abstract:

The invention provides a polishing system and method of its use comprising (a) a liquid carrier, (b) a polymer having a degree of branching of about 50% or greater, and (c) a polishing pad, an abrasive, or a combination thereof.

US Patent:

20040014400, Jan 22, 2004

Filed:

Jul 19, 2002

Appl. No.:

10/199704

Inventors:

Isaac Cherian - Aurora IL, US
Jian Zhang - Aurora IL, US
Fred Sun - Naperville IL, US
Shumin Wang - Naperville IL, US
Eric Klingenberg - Emmaus PA, US

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

B24B001/00

US Classification:

451/041000, 451/285000

Abstract:

The invention provides a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about S/cm to about S/cm, and (c) a liquid carrier.

US Patent:

20060278614, Dec 14, 2006

Filed:

Jun 8, 2005

Appl. No.:

11/147531

Inventors:

Yuchun Wang - Naperville IL, US
Fred Sun - Naperville IL, US
Joseph Hawkins - Oswego IL, US

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

C09K 13/00
C09K 13/06
B44C 1/22
C03C 25/68

US Classification:

216089000, 252079100, 252079400, 216092000

Abstract:

A chemical-mechanical polishing composition comprising abrasive particles, a hydroxyquinoline, and a diamine compound comprising an ether group, and a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.

US Patent:

20070190789, Aug 16, 2007

Filed:

Feb 14, 2007

Appl. No.:

11/706929

Inventors:

Phillip Carter - Round Lake IL, US
Nevin Naguib - Aurora IL, US
Fred Sun - Naperville IL, US

International Classification:

H01L 21/461
C03C 15/00

US Classification:

438692000, 216088000, 252079100, 438693000

Abstract:

The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing an ITO surface. The compositions of the invention comprise a particulate zirconium oxide or colloidal silica abrasive, which has a mean particle size of not more than about 150 nm, suspended in an aqueous carrier, which preferably has a pH of not more than about 5. Preferably, the abrasive has a surface area in the range of about 40 to about 220 m/g. The CMP compositions of the invention provide an acceptably low surface roughness when used to polish an ITO surface, providing clean and uniform surfaces.

US Patent:

20110014858, Jan 20, 2011

Filed:

Jul 16, 2010

Appl. No.:

12/837705

Inventors:

Ching-Ming TSAI - Jhudong Township, TW
Fred Sun - Naperville IL, US
Sheng-Huan Liu - KweiShen, TW
Jia-Cheng Hsu - Tainan City, TW
Ananth Naman - Naperville IL, US
Hao-Kuang Chiu - Taipei City, TW
Dinesh Khanna - Naperville IL, US

International Classification:

B24D 11/00

US Classification:

451527

Abstract:

The present invention provides polishing pads for use in CMP processes. In one embodiment, a pad comprises a surface defining a plurality of grooves with landing surfaces separating the grooves, the landing surfaces together defining a substantially coplanar polishing surface, each groove having a depth of at least about 10 mil and a width, W, with any two adjacent grooves being separated from each other a landing surface having a width, W, wherein the quotient W/Wis less than or equal to 3. In a preferred embodiment, the surface of the pad defines a series of concentric substantially circular grooves. In an alternative embodiment, the surface of the pad defines a spiral groove having a depth of at least about 10 mil and a width W, and a spiral landing surface outlining spiral groove the having a width, W, wherein the spiral landing surface defines a substantially coplanar polishing surface and the quotient W/Wis less than or equal to 3.

US Patent:

20170158992, Jun 8, 2017

Filed:

Jul 17, 2015

Appl. No.:

15/327326

Inventors:

- Aurora IL, US
Cheng-yuan KO - New Taipei City, TW
Fred SUN - Naperville IL, US

International Classification:

C11D 11/00
C11D 7/36
H01L 21/768
H01L 21/02
H01L 21/321
C11D 7/32
C11D 7/26

Abstract:

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains a bulky protecting ligand, an organic amine, an organic inhibitor, and water. The invention also provides methods for using the cleaning composition.