Frederick W Cleary

US Patent:

41609840, Jul 10, 1979

Filed:

Nov 14, 1977

Appl. No.:

5/851224

Inventors:

Glenn O. Ladd - Rancho Palos Verdes CA
Frederick W. Cleary - Westlake Village CA

Assignee:

Hughes Aircraft Company - Culver City CA

International Classification:

H01L 2980

US Classification:

357 22

Abstract:

The specification describes a Schottky-gate field-effect transistor and related fabrication process wherein thin ion implanted surface stabilization regions are formed between source and gate electrodes and gate and drain electrodes of the device and to a thickness of between 100 and 1,000 angstroms. This is accomplished utilizing the source, gate and drain electrodes as an ion implantation mask against impinging inert ions which render the implanted regions semi-insulating, and this process requires no post-implantation annealing.

US Patent:

42440971, Jan 13, 1981

Filed:

Mar 15, 1979

Appl. No.:

6/021049

Inventors:

Frederick W. Cleary - Westlake Village CA

Assignee:

Hughes Aircraft Company - Culver City CA

International Classification:

B01J 1700

US Classification:

29571

Abstract:

The specification describes a Schottky-gate field-effect transistor and related fabrication process wherein thin ion implanted surface stabilization regions are formed between source and gate electrodes and gate and drain electrodes of the device and to a thickness of between 100 and 1,000 angstroms. This is accomplished utilizing the source, gate and drain electrodes as an ion implantation mask against impinging inert ions which render the implanted regions semi-insulating, and this process requires no postimplantation annealing.